Most cited (updated monthly)
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Effect of substrate roughness on the nucleation and growth behaviour of microwave plasma enhanced CVD diamond films – a case study
Keywords:CVD;diamond;silicon;roughness;nucleation;growthFunctional DiamondVolume 3, Issue 1 (2023) -
Study on radar electronic module cooling by using diamond/copper composites
Keywords:Diamond/copper;composite;thermal conductivity;coolingFunctional DiamondVolume 3, Issue 1 (2023) -
Effect of step-flow modulation on the large-size single crystal diamond through mosaic growth
Keywords:Single crystal diamond;Mosaic growth;Step-flow orientation;Boundary;MPCVDFunctional DiamondVolume 3, Issue 1 (2023) -
High-power dual-wavelength intracavity diamond Raman laser
Keywords:Diamond;Raman laser;intracavity;high-power;dual-wavelengthFunctional DiamondVolume 3, Issue 1 (2023) -
Construction of porous diamond film with enhanced electric double-layer capacitance via regrowth of diamond nanoplatelets
Keywords:Boron-doped diamond;porous diamond;electrochemistry;electric double-layer capacitanceFunctional DiamondVolume 3, Issue 1 (2023) -
High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric
The high frequency H-diamond metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on single diamond substrate using 300°C ALD grown Al2O3 as gate dielectric and passivation layer. The devices gate length, gate/drain spacing and dielectric thickness are 100 nm, 2 μm, and 10 nm, respectively. The direct-current and frequency characteristics were investigated. The device shows a maximum saturation drain current of −492.6 mA/mm and gm of 135.2 mS/mm. The device shows good high temperature working performance, and the maximum saturation drain current only has a little decreasing of 7.6%. at 200°C. In addition, the device exhibits a maximum cut-off frequency of 36.2 GHz and maximum oscillation frequency of 70.5 GHz. The transient drain current response measurement indicates that the drain current can follow the changing of gate voltage at the frequency of 1 MHz. These results indicate that the Al2O3 dielectric is suitable for using in high frequency or the high-speed switching devices.
Keywords:Diamond;MOSFET;Al2O3;high frequencyFunctional DiamondVolume 3, Issue 1 (2023) -
Highly tolerant diamond Schottky barrier photodiodes for deep-ultraviolet xenon excimer lamp and protons detection
The response property and stability of diamond Schottky barrier photodiodes (SBPDs) were investigated for the monitor applications of deep ultraviolet (DUV) light and high-energy radiation particles. The SBPDs were fabricated on the unintentionally doped insulating diamond epilayer grown on a heavily boron-doped p+-diamond (100) conductive substrate by microwave plasma chemical vapor deposition. The vertical-type SBPDs were constructed of semitransparent tungsten carbide (WC) Schottky contact on the top of the device and a WC/titanium ohmic contact on the bottom. The SBPDs were operated to detect the DUV light and protons in zero-bias photovoltaic mode. The spectral response of the SBPDs showed that the peak wavelength was at 182 nm with a sensitivity of 46 ± 1 mA/W. The response speed was shorter than 1 sec, with a negligible charge-up effect and persistent photoconductivity. The SBPDs showed a stable response upon the irradiation by 172-nm xenon excimer lamp with 70 mW/cm2 for 200 hrs and 70 MeV protons for the dose of 10 MGy, corresponding to a non-ionizing energy loss of 1.4 × 1016 MeV neq/cm2.Keywords:diamond;Schottky barrier photodiode;deep-ultraviolet light;detector for xenon excimer lamp;detector for protonsFunctional DiamondVolume 2, Issue 1 (2022) -
Turning the optical properties of microcrystalline diamond films by boron ion implantation and annealing
Keywords:Microcrystalline diamond;boron ion implanted;annealing;refractive indexFunctional DiamondVolume 4, Issue 1 (2024) -
Research Progress on Silicon Vacancy Color Centers in Diamond
Keywords:Diamond;SiV color centers;photoluminescence;charge state;single-photon sourceFunctional DiamondVolume 4, Issue 1 (2024) -
Room-temperature bonding of GaN and diamond via a SiC layer
A GaN-on-diamond structure is the most promising candidate for improving the heat dissipation efficiency of GaN-based power devices. Room-temperature bonding of GaN and diamond is an efficient technique for fabricating this structure. However, it is extremely difficult to polish diamond to an average roughness (Ra) below 0.4 nm, especially for polycrystalline diamond. In this work, Room-temperature bonding of GaN and rough-surfaced diamond with a SiC layer was successfully achieved by a surface-activated bonding (SAB) method. The diamond surface’s initial Ra value was 0.768 nm, but after deposition of the SiC layer, the Ra decreased to 0.365 nm. The SiC layer formed at the as-bonded GaN/diamond interface was amorphous, with a thickness of about 7 nm. After annealing at 1000-°C, the amorphous SiC layer became polycrystalline, and its thickness increased to approximately 12 nm. These results indicate that the deposition of a SiC layer on diamond can efficiently lower the diamond surface’s roughness and thus facilitate room-temperature bonding.
Keywords:GaN/diamond interface;SiC layer;heat dissipation;thermal management;surface-activated bondingFunctional DiamondVolume 2, Issue 1 (2022)