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In the future, electronic parts will penetrate everything, generating a new and fast-growing pollution problem. Future devices therefore need to be environmentally friendly with strong recycling options. A paradigm change in semiconductor technology is predicted based on applications of better suited materials which can fulfil these criteria. Carbon based materials and here especially diamond are promising candidates. Bulk and surface properties of diamond are introduced in combination with applications in power electronics, quantum technology, bio-and electrochemistry and MEMS. Large amounts of diamond seeds and wafers will be required to approach commercial markets. Their availability in combination with quality and size as well as required energies for production are introduced. The production of CVD diamond is currently about 100–250 times more intense with respect to energy than Silicon. A problem which is addressed by use of new solid-sates microwave sources. The definition of “green diamond” is given taking into account requirements with respect to energy and methane/hydrogen production. A brief discussion and comparison of diamond global markets and related potentials in comparison to SiC and GaN is given.

Herein, the mid-infrared (7.7–13.7 μm) diamond-based phase shifter was designed and optimized by finite-element analysis. The ridge-shaped diamond waveguide is designed and doped to form the internal p–n structure, and the internal carrier distribution is changed by applying forward and reverse voltages to change the effective refractive index to achieve the effect of π-phase shift. The results show that when p-doping concentration is 4 × 1017 cm−3 and n doping concentration is 1 × 1018 cm−3, upon the reverse voltage (8 V) is applied, the change of the real part of effective refractive index (ΔR) is 1.6 × 10−5, and the length of the phase shifter (L) required to realize the π-phase shift is 241 mm; upon the forward voltage (–8 V) is applied, ΔR increases to 3.2 × 10−4, and the length of the phase shifter required is shortened to 12.03 mm. Such a short length is relatively easy in industrial production. In order to make the refractive index distribution more uniform, the carrier concentration has been optimized as 1 × 1017 cm−3 for p-type and 4 × 1017 cm−3 for n-type, respectively.

A resonator with a high Q factor is generally pursued in the single-crystal diamond (SCD) microelectromechanical system (MEMS) for high-performance sensors. In this report, we investigate the oxygen etching effect of SCD on the Q factors of the SCD resonators by using the Raman spectroscopy spatial mapping. We aim to establish the etch pit effect on the Q factors of the SCD MEMS resonators. The 2D Raman imaging technique discloses the dislocations and the local stress in the SCD MEMS resonators in microscale. It is observed that the full width half maximum (FWHM) of the Raman spectra of the SCD resonators has marked relationship with the Q factors of the SCD resonators. The etch pits resulted from the dislocations have weak influence on the Q factors of the SCD resonators.

Peculiarities of the processes of self-assembly of carbon under pressure up to 8 GPa and temperatures up to 1600°C in pure carbon, hydrocarbon, fluorocarbon, organometallic systems and binary mixtures of all-carbon, hydrocarbon, and fluorocarbon compounds have been revealed in the course of studies of pressure and temperature-induced transformations of different carbon-containing systems. It was shown that the character of the processes of self-assembly of carbon in different systems is controlled in the first place by the mobility of carbon atoms. The low diffusion mobility of carbon atoms in a condensed state at temperatures below 2000° C leads to the fact that in pure carbon systems studied on the examples of fullerite C60 and closed polyhedral carbon nanoparticles, carbon self-organization can occur only due to processes associated with small movements of carbon atoms that ensure the formation of intermolecular bonds in cases of polymerization of C60 or the restructuring of the internal structure of a polyhedral particle, strictly limited to the confines of a single nanoparticle. In the hydrocarbon and fluorocarbon systems, the character of transformation changes drastically due to formation of volatile low-molecular hydrocarbon and fluorocarbon fractions, which ensure a high gas-phase or fluid mobility to carbon atoms. Studies of pressure and temperature-induced transformations of different hydrocarbon, fluorocarbon compounds and their homogeneous binary mixtures revealed a clear synergistic effect of fluorine and hydrogen on processes of carbonization, graphitization, and formation of diamond in these systems in relation to industrially significant reduction of p,T parameters for formation of graphite, diamond and increase in the content of nanosize diamond fractions in the products of transformations of binary mixtures in comparison with pure hydrocarbon and fluorocarbon compounds. Discovery of this synergistic effect opens new opportunities for synthesis of high-purity and doped ultranano-, nano-, submicro-, and micronsized diamonds with the specific properties for different applications in quantum physics and biomedicine. Studies of particularities of self-assembly of carbon in processes of thermal transformations of ferrocene at high pressures demonstrated the possibility of preparation of iron carbide nanoparticles encapsulated into carbon shells, Fe7C3@C and Fe3C@C, considered as perspective magneto-controlled platforms for different biomedical nanocomplexes.

It has been half of a century since the publication of the early reports about CVD diamond films in the world in the early 1970’s. The reports for meaningful laboratory growth of diamond films with much higher growth rate and higher quality could be found in the early 1980’s, under the so-called “Diamond Fever” initiated all over the world. In less than 10 years later, CVD diamond research had started in China as “863 Plan” (High Technology Research and Development Plan in China), a newly launched program in 1987. 35 years later, it is very interesting to explore what really happened to the CVD diamond in China. As a multi-functional material with a vast combination of extraordinary electrical, mechanical, thermal, optical, acoustic, and electro-chemistry properties, the CVD diamond has wide applications potentially in the field of multidiscipline high technologies. Therefore, this article aims to provide a general review on the CVD diamond by presenting a clearer picture about the history, the research status and its development, particularly the commercialization in China. Finally, the general trend in the near future is discussed.

Fluorescent nanodiamonds (FNDs) with nitrogen-vacancy (NV) centers have been extensively studied in numerous fields because of their distinct magneto-optical properties. The NV center is a perfect candidate for a nanosensor because of its stable photoluminescence and manipulable spin state by microwave/magnetic field. Considering the controllable sizes (5–100 nm), abundant surface groups, and good biocompatibility, FNDs are valuable in biosensing to study the physiological activity at the cellular scale. This review summarizes the recent applications of FNDs in detecting physiological parameters (such as temperature, pH) as well as proteins, free radicals, viruses, etc. Highlights include the development of FND-based biosensors and the NV center transduction system that responds to signal changes or concentrations fluctuations of target species.

Diamond is an ultrawide bandgap semiconductor with excellent electronic and photonic properties, which has great potential applications in microelectronic and optoelectronic devices. As an allotrope of diamond, graphene also has many fantastic properties like diamond, which caught much attention in combing them together. In this work, a direct sp3-to-sp2 conversion method was proposed to fabricate graphene layers on single crystal diamond by thermal treatment with Ni film catalyst. By optimizing the conversing conditions, a thin graphene layer with low sheet resistance was obtained on diamond. Based on this, an all-carbon sandwich structural graphene-diamond-graphene (GDG) detector was fabricated, which shows low dark current of 0.45 nA at 0.5 V μm−1 applied electric field. The maximum sensitivity of this detector is obtained when the incident X-ray is 12 keV, with the value of 2.88 × 10−8 C Gy−1. Moreover, the rise time and delay time of the GDG detector is about 1.2 and 22.8 ns, respectively, which are very close to that of diamond detector with Ti/Au electrode. The realization of the direct in-situ sp3-to-sp2 conversion on diamond shows a promising approach for fabricating diamond-based all-carbon electronic devices.

Sub-monolayers of titanium were deposited onto oxidised (100) single-crystal diamond surfaces and annealed in vacuo at temperatures up to 1000 °C to find a temperature-stable termination procedure that produces a surface with Negative Electron Affinity (NEA). The samples were analysed by X-ray Photoelectron Spectroscopy, Ultraviolet Photoelectron Spectroscopy and Energy-Filtered Photoemission Electron Microscopy to determine their electron affinity and work function values. NEA values were observed on samples following annealing above 400 °C, with the largest NEA value being –0.9 eV for a sample coated with a half-monolayer of Ti annealed at 400 °C. Work function values were ∼4.5 eV for all samples annealed at temperatures between 400 and 600 °C, then rose at higher temperatures due to the loss of substantial amounts of O from the surface. Work-function maps indicated that the surface was uniform over areas 5700 μm2, suggesting that the deposition and annealing steps used are reliable methods to produce films with homogeneous surface properties.

Diamond/aluminum composite material has the advantages of high thermal conductivity, low expansion, and lightweight, which has a wide range of application prospects in the field of electronic packaging thermal management. However, the serious interface problems between diamond and aluminum limit the full play of the thermal conductivity of composite materials. A reasonable interface design can maximize the thermal conductivity of composite materials. This article focuses on the interface modification of diamond/aluminum composites, briefly describing the theoretical basis of interface design, the research status of interface modification, interface reaction and composite stability, and prospects for diamond/aluminum composites material development.