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The high frequency H-diamond metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on single diamond substrate using 300°C ALD grown Al2O3 as gate dielectric and passivation layer. The devices gate length, gate/drain spacing and dielectric thickness are 100 nm, 2 μm, and 10 nm, respectively. The direct-current and frequency characteristics were investigated. The device shows a maximum saturation drain current of −492.6 mA/mm and gm of 135.2 mS/mm. The device shows good high temperature working performance, and the maximum saturation drain current only has a little decreasing of 7.6%. at 200°C. In addition, the device exhibits a maximum cut-off frequency of 36.2 GHz and maximum oscillation frequency of 70.5 GHz. The transient drain current response measurement indicates that the drain current can follow the changing of gate voltage at the frequency of 1 MHz. These results indicate that the Al2O3 dielectric is suitable for using in high frequency or the high-speed switching devices.
A resonator with a high Q factor is generally pursued in the single-crystal diamond (SCD) microelectromechanical system (MEMS) for high-performance sensors. In this report, we investigate the oxygen etching effect of SCD on the Q factors of the SCD resonators by using the Raman spectroscopy spatial mapping. We aim to establish the etch pit effect on the Q factors of the SCD MEMS resonators. The 2D Raman imaging technique discloses the dislocations and the local stress in the SCD MEMS resonators in microscale. It is observed that the full width half maximum (FWHM) of the Raman spectra of the SCD resonators has marked relationship with the Q factors of the SCD resonators. The etch pits resulted from the dislocations have weak influence on the Q factors of the SCD resonators.