Diamond possesses excellent physical and electronic properties

and demonstrates great application potential in the next-generation high-power and high-frequency power electronic devices. In recent years

significant progress has been made in the research on diamond diodes and field-effect transistors (FETs). This paper summarizes the effects of channel types

gate dielectrics

substrate types and device structures on the performance of diamond FETs and diodes. The hydrogen-terminated surface provides a high-performance channel for FETs through the formation of a two-dimensional hole gas

while Al

2

O

3

and h-BN and other gate dielectric materials play a key role in reducing interface state density and improving the high-temperature stability of the devices. The development of high-quality 2-inch sapphire heteroepitaxial diamond substrates effectively alleviated the problem of size limitations of diamond substrates

providing a feasible solution for the fabrication of large-area and low-cost diamond devices. The article analyzes the factors that affect the core performance of diamond devices

including breakdown voltage

on-resistance

current density and threshold voltage. The field plate structure can alleviate the edge electric field concentration effect of the Schottky metal

effectively increase the breakdown voltage of the diamond Schottky diode

and does not sacrifice its forward characteristics. We discuss the

main bottlenecks and challenges that currently restrict the development of diamond devices. We propose effective strategies to enhance the overall performance of diamond electronic devices from perspectives such as material growth

interface engineering

and structural design. This article aims to provide scientific references for the design and development of high-performance diamond electronic devices.