This paper proposes a hydrogen-terminated diamond MOSFET structure with a buried N-layer and systematically studies its static and breakdown characteristics using Sentaurus TCAD. By introducing an N-type buried layer below the gate-drain channel

the internal electric field distribution of the device is effectively modulated

while new electric field peaks are formed within the drift region

achieving uniform distribution of the electric field between gates and drains. Simulation results show that the proposed structure can significantly increase the device breakdown voltage while having less impact on on-resistance

thereby achieving a higher Baliga’s figure of merit (BFOM).