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Highly tolerant diamond Schottky barrier photodiodes for deep-ultraviolet xenon excimer lamp and protons detection

Masataka Imura,Manabu Togawa,Masaya Miyahara,Hironori Okumura,Jiro Nishinaga,Meiyong Liao,Yasuo Koide
Volume 2, Issue 1 (2022)
DOI: 10.1080/26941112.2022.2150526
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Abstract

The response property and stability of diamond Schottky barrier photodiodes (SBPDs) were investigated for the monitor applications of deep ultraviolet (DUV) light and high-energy radiation particles. The SBPDs were fabricated on the unintentionally doped insulating diamond epilayer grown on a heavily boron-doped p+-diamond (100) conductive substrate by microwave plasma chemical vapor deposition. The vertical-type SBPDs were constructed of semitransparent tungsten carbide (WC) Schottky contact on the top of the device and a WC/titanium ohmic contact on the bottom. The SBPDs were operated to detect the DUV light and protons in zero-bias photovoltaic mode. The spectral response of the SBPDs showed that the peak wavelength was at 182 nm with a sensitivity of 46 ± 1 mA/W. The response speed was shorter than 1 sec, with a negligible charge-up effect and persistent photoconductivity. The SBPDs showed a stable response upon the irradiation by 172-nm xenon excimer lamp with 70 mW/cm2 for 200 hrs and 70 MeV protons for the dose of 10 MGy, corresponding to a non-ionizing energy loss of 1.4 × 1016 MeV neq/cm2.

Keywords

diamond; Schottky barrier photodiode; deep-ultraviolet light; detector for xenon excimer lamp; detector for protons

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