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Room-temperature bonding of GaN and diamond via a SiC layer

Ayaka Kobayashi,Hazuki Tomiyama,Yutaka Ohno,Yasuo Shimizu,Yasuyoshi Nagai,Naoteru Shigekawa,Jianbo Liang
Volume 2, Issue 1 (2022)
DOI: 10.1080/26941112.2022.2145508


A GaN-on-diamond structure is the most promising candidate for improving the heat dissipation efficiency of GaN-based power devices. Room-temperature bonding of GaN and diamond is an efficient technique for fabricating this structure. However, it is extremely difficult to polish diamond to an average roughness (Ra) below 0.4 nm, especially for polycrystalline diamond. In this work, Room-temperature bonding of GaN and rough-surfaced diamond with a SiC layer was successfully achieved by a surface-activated bonding (SAB) method. The diamond surface’s initial Ra value was 0.768 nm, but after deposition of the SiC layer, the Ra decreased to 0.365 nm. The SiC layer formed at the as-bonded GaN/diamond interface was amorphous, with a thickness of about 7 nm. After annealing at 1000-°C, the amorphous SiC layer became polycrystalline, and its thickness increased to approximately 12 nm. These results indicate that the deposition of a SiC layer on diamond can efficiently lower the diamond surface’s roughness and thus facilitate room-temperature bonding.


GaN/diamond interface; SiC layer; heat dissipation; thermal management; surface-activated bonding


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