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Epitaxial lateral growth of single-crystal diamond under high pressure by a plate-to-plate MPCVD

Wei Cao ,
Deng Gao ,
Hongyang Zhao ,
Zhibin Ma
Volume 1, Issue 1 (2021)
DOI: 10.1080/26941112.2021.1947750


The epitaxial lateral growth of single-crystal diamond (SCD) using a plate-to-plate microwave plasma chemical vapor deposition (MPCVD) reactor under high pressure is investigated. The radicals’ distribution in H2/CH4 plasma as a function of pressure was locally detected by optical emission spectroscopy (OES). Raman spectroscopy and optical microscope were employed to analyze the properties of SCD deposited in different pressure. The OES results show that radicals’ distribution along the substrate direction is symmetrical under 20 kPa pressure. The symmetrical distribution of radicals at 20 kPa is in favor of epitaxial lateral growth SCD around the seed and without polycrystalline diamond (PCD) rim. When the pressure is increased to 21.5 kPa, the optical emission spectra center of plasma shifts close to the microwave reflector where is far away from the microwave source. The contact state between the diamond seed and the plasma is deteriorated and the PCD rim occurs in the plasma uncovered area. While the epitaxial lateral growth pattern occurs in the plasma covered area and the lateral growth rate of this region improves with the increase of pressure. A higher growth rate does not result in good quality; meanwhile, the diamond growth step spacing and direction become inconsistent in the transition zone as a function of pressure increasing. Finally, the overall effective lateral expansion area does not increase with the improvement of pressure. Therefore, the uniform and symmetrical distributed plasma is more conducive to the epitaxial lateral growth of SCD, and the effective expansion growth SCD can be realized at 20 kPa.


Microwave plasma; OES; SCD lateral growth; high pressure


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