Previous Next

Germanium gate hydrogen-terminated diamond field effect transistor with AlO dielectric layer

Zhang Minghui ,
Wang Wei ,
Wen Feng ,
Lin Fang ,
Chen Genqiang ,
Wang Fei ,
He Shi ,
Wang Yanfeng ,
Fan Shuwei ,
Bu Renan ,
Min Tai ,
Yu Cui ,
Wang Hongxing
+ 5 authors fewer
Volume 2, Issue 1 (2022)
DOI: 10.1080/26941112.2022.2159775
Full content

Abstract

Investigation of germanium gate hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with Al2O3 dielectric layer has been successfully performed. The device demonstrates a normally-on characteristics, whose maximum drain-source current density, threshold voltage, maximum transconductance, on/off ratio, subthreshold swing, capacitance, carrier density, saturation carrier mobility, fixed charge density and interface state density are of −37.3 mA/mm, 0.22 V, 6.42 mS/mm, 108, 134 mV/dec, 0.33 μF/cm2, 9.83 × 1012 cm−2, 97.9 cm2/V·s, 7.63 × 1012 cm−2 and 2.56 × 1012 cm−2·eV−1, respectively. This work is significant to the development of H-terminated diamond FET.

Keywords

Hydrogen-terminated diamond; field effect transistor; germanium

References

  • Isberg J, Hammersberg J, Johansson E, et al. High carrier mobility in single-crystal plasma-deposited diamond. Science. 2002;297(5587):1670–1672. https://doi.org/10.1126/science.1074374.
  • Sasama Y, Kageura T, Imura M, et al. High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures. Nat Electron. 2021;5(1):37–44. https://doi.org/10.1038/s41928-021-00689-4.
  • Yu C, Zhou C, Guo J, et al. Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density. Funct. Diam. 2022;2(1):64–70. https://doi.org/10.1080/26941112.2022.2082853.
  • Liao M. Progress in semiconductor diamond photodetectors and MEMS sensors. Funct. Diam. 2021;1(1):29–46. https://doi.org/10.1080/26941112.2021.1877019.
  • Wang W, Fu K, Hu C, et al. Diamond based field-effect transistors with SiNX and ZrO2 double dielectric layers. Diam. Relat. Mater. 2016;69:237–240. https://doi.org/10.1016/j.diamond.2016.04.014.
  • Kawarada H. Hydrogen-terminated diamond surfaces and interfaces. Surf. Sci. Rep. 1996;26(7):205–206. https://doi.org/10.1016/S0167-5729(97)80002-7.
  • Maier F, Riedel M, Mantel B, et al. Origin of surface conductivity in diamond. Phys. Rev. Lett. 2000;85(16):3472–3475. https://doi.org/10.1103/PhysRevLett.85.3472.
  • Hirama K, Takayanagi H, Yamauchi S, et al. High-performance p-channel diamond MOSFETs with alumina gate insulator. In: 2007 IEEE Int. ELECTRON DEVICES Meet. VOLS 1, 2, 2007: p. 873+. https://doi.org/10.1109/IEDM.2007.4419088.
  • Crawford KG, Maini I, Macdonald DA, et al. Surface transfer doping of diamond: a review. Prog. Surf. Sci. 2021;96(1):100613. https://doi.org/10.1016/j.progsurf.2021.100613.
  • Ren Z, Ding S, Liang Z, et al. Diamond MOSFET with MoO3/Si3N4 doubly stacked gate dielectric. Appl. Phys. Lett. 2022;120(4):042104. https://doi.org/10.1063/5.0077530.
  • Liao M, Sang L, Shimaoka T, et al. Energy-efficient metal–insulator–metal-semiconductor field-effect transistors based on 2D carrier gases. Adv. Electron. Mater. 2019;5(5):1800832. https://doi.org/10.1002/aelm.201800832.
  • Yin Z, Tordjman M, Vardi A, et al. A diamond: h /WO3 metal-oxide-semiconductor field-effect transistor. IEEE Electron Device Lett. 2018;39(4):540–543. https://doi.org/10.1109/LED.2018.2808463.
  • Wang Y-F, Wang W, Abbasi HN, et al. LiF/Al2O3 as dielectrics for MOSFET on single crystal hydrogen-terminated diamond. IEEE Electron Device Lett. 2020;41(6):808–811. https://doi.org/10.1109/LED.2020.2990118.
  • Ren Z, Zhang J, Zhang J, et al. Diamond field effect transistors with MoO3 gate dielectric. IEEE Electron Device Lett. 2017;38(6):786–789. https://doi.org/10.1109/LED.2017.2695495.
  • Kitabayashi Y, Kudo T, Tsuboi H, et al. Normally-off C-H diamond MOSFETs with partial C-O channel achieving 2-kV breakdown voltage. IEEE Electron Device Lett. 2017;38(3):363–366. https://doi.org/10.1109/LED.2017.2661340.
  • Verona C, Ciccognani W, Colangeli S, et al. V2O5 MISFETs on H-terminated diamond. IEEE Trans. Electron Devices. 2016;63(12):4647–4653. https://doi.org/10.1109/TED.2016.2617362.
  • Liu JW, Liao MY, Imura M, et al. Normally-off HfO2-gated diamond field effect transistors. Appl. Phys. Lett. 2013;103(9):092905. https://doi.org/10.1063/1.4820143.
  • Liu JW, Oosato H, Liao MY, et al. Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-­effect transistors with Y2O3 oxide insulator grown by electron beam evaporator. Appl. Phys. Lett. 2017;110(20):203502. https://doi.org/10.1063/1.4983091.
  • Matsumoto T, Kato H, Oyama K, et al. Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics. Sci. Rep. 2016;6(1):31585. https://doi.org/10.1038/srep31585.
  • Wang W, Wang Y, Zhang M, et al. An enhancement-mode hydrogen-terminated diamond field-effect transistor with lanthanum hexaboride gate material. IEEE Electron Device Lett. 2020;41(4):585–588. https://doi.org/10.1109/LED.2020.2972330.
  • Zhang M, Wang W, Fan S, et al. Normally-off hydrogen-terminated diamond field effect transistor with yttrium gate. Carbon N. Y. 2021;176:307–312. https://doi.org/10.1016/j.carbon.2021.01.121.
  • Zhang M, Wang W, Chen G, et al. Electrical properties of yttrium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer. Appl. Phys. Lett. 2021;118(5):053506. https://doi.org/10.1063/5.0027882.
  • Zhang M, Wang W, Wen F, et al. Large |VTH| of normally-OFF field effect transistor with yttrium gate material directly deposited on hydrogen-terminated diamond. IEEE Trans. Electron Devices. 2022;69(7):3563–3567. https://doi.org/10.1109/TED.2022.3174047.
  • He S, Wang YF, Chen G, et al. Performance of hydrogen-terminated diamond MOSFET with LaB6/Al2O3 bilayer dielectric. Diam. Relat. Mater. 2021;120:108646. https://doi.org/10.1016/j.diamond.2021.108646.
  • Wang YF, Wang W, Chang X, et al. Performance of hydrogen-terminated diamond MOSFET with bilayer dielectrics of YSZ/Al2O3. Diam. Relat. Mater. 2019;99:107532–107538. https://doi.org/10.1016/j.diamond.2019.107532.
  • Wang Y-F, Wang W, Chang X, et al. Hydrogen-terminated diamond field-effect transistor with a bilayer dielectric of HfSiO4/Al2O3. Diam. Relat. Mater. 2019;99:107530. https://doi.org/10.1016/j.diamond.2019.107530.
  • Zhang JF, Chen WJ, Ren ZY, et al. Characterization and mobility analysis of normally off hydrogen-terminated diamond metal–oxide–semiconductor field-effect transistors. Phys. Status Solidi A. 2020;217(1):1900462. https://doi.org/10.1002/pssa.201900462.
  • Tao SH, Bolger PM. Hazard assessment of germanium supplements. Regul. Toxicol. Pharmacol. 1997;25(3):211–219. https://doi.org/10.1006/rtph.1997.1098.
378
Download
Cite
Favorite
Share

Related articles