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In the future, electronic parts will penetrate everything, generating a new and fast-growing pollution problem. Future devices therefore need to be environmentally friendly with strong recycling options. A paradigm change in semiconductor technology is predicted based on applications of better suited materials which can fulfil these criteria. Carbon based materials and here especially diamond are promising candidates. Bulk and surface properties of diamond are introduced in combination with applications in power electronics, quantum technology, bio-and electrochemistry and MEMS. Large amounts of diamond seeds and wafers will be required to approach commercial markets. Their availability in combination with quality and size as well as required energies for production are introduced. The production of CVD diamond is currently about 100–250 times more intense with respect to energy than Silicon. A problem which is addressed by use of new solid-sates microwave sources. The definition of “green diamond” is given taking into account requirements with respect to energy and methane/hydrogen production. A brief discussion and comparison of diamond global markets and related potentials in comparison to SiC and GaN is given.

Carbon, the fourth most abundant element in the Universe, possesses numerous allotropes with diverse bonding character (sp1-, sp2- and sp3-hybridized bonds) and structural motif of the constituting atoms. In particular, the carbon materials with a fully or nearly 100% sp3-hybridized strong C-C bonds often lead to excellent mechanical properties, chemical stability, thermal and optical properties, such as crystalline diamond and diamond-like amorphous carbon (DLC). In this review, we systematically summarize the synthesis, microstructure, mechanical properties, thermal and optical properties of ultrahard carbon materials with current experimental results on nano-polycrystalline diamond (NPD), nanotwinned diamond (NTD), micro-grained polycrystalline diamond (MPD), and amorphous diamond/carbon. In addition, we discuss the difference of spectra of XRD, Raman and EELS between various nanocrystalline diamond powder and ultrahard carbon materials. Finally, we provide our insights into the future development and applications in the research of ultrahard carbon bulk materials by high-pressure and high-temperature techniques according to the current advantages, limitations and challenges in the experiment.

Diamond and graphene are considered to be one of the most promising thermal interface materials (TIMs) for electronic devices benefited from their highest thermal conductivity in the natural world. However, orientated fabrication of high thermal conductivity diamond and graphene hybrid arrays with three dimensions (3 D) thermal conductive networks are still problematic. Here, we used a unique one-step microwave plasma chemical vapor deposition, n-butylamine, as the liquid source to prepare a novel high thermal conductivity 3 D vertical diamond/graphene (VDG) hybrid arrays films. The orientated 3 D thermal conduction path of the VDG is regulated by the growth temperature, and the through-plane thermal conductivity value of the VDG700 films up to 97 W m−1 K−1. In the actual TIM performance measurement, the system cooling efficiency with our VDG as TIM is higher than the state-of-the-art commercial TIM, demonstrating the superior ability to solve the inter-facial heat transfer issues in electronic systems.

The dislocation identification method using X-ray topography by reflection mode geometry was applied to characterize IIa, Ib and highly B doped high pressure high temperature (HPHT) grown crystals. In both IIa and Ib crystals, dislocations are found to propagate in the <111> grown direction, with dominant vectors of [110] and [1-10], neither of which has no c-axis segment. For Ib crystal, many dislocations are also generated in the <112> and <121> directions, which are slightly tilted to <111>. It was confirmed that the dislocations in the same direction have the same Burgers vectors, but the dislocations are spread in broad area. A total of up to 20 HPHT crystals were measured and found to exhibit different dislocation distributions. This indicates an immature growth technique in terms of dislocation. Measurements of four chemical vapor deposition (CVD) substrates showed numerous dislocation bundles, making individual dislocation directions analysis impossible. CVD substrates suffer from an increase in dislocations due to CVD growth, resulting in poor diamond quality in terms of dislocation. XRT analysis on dislocations of epitaxial growth will be very important prior to CVD substrates analysis.

As one of the representatives of carbon-based semiconductors, diamond is called the “Mount Everest” of electronic materials. To maximize its properties and realize its industrial applications, the fabrication of wafer-scale high-quality diamonds is critical. To date, heteroepitaxy is considered as a promising method for the growth of diamond wafers with considerable development. In this review, fundamentals of diamond heteroepitaxy is firstly introduced from several perspectives including nucleation thermodynamics and kinetic, nucleation process at the atomic level, as well as the interplay between the epitaxial film and substrate. Second, the bias enhanced nucleation (BEN) method is reviewed, including BEN setup, BEN process window, nucleation phenomenology (mainly on Iridium), nucleation mechanism by ion bombardment, and large-scale nucleation realization. Third, the following textured growth process is presented, as well as grain boundary annihilation, and dislocation and stress reduction technologies. Fourth, the applications of diamonds in electronic devices are studied, showing its excellent performances in the future power and electronic devices. Finally, prospects in this field are proposed from several aspects.

Sub-monolayers of titanium were deposited onto oxidised (100) single-crystal diamond surfaces and annealed in vacuo at temperatures up to 1000 °C to find a temperature-stable termination procedure that produces a surface with Negative Electron Affinity (NEA). The samples were analysed by X-ray Photoelectron Spectroscopy, Ultraviolet Photoelectron Spectroscopy and Energy-Filtered Photoemission Electron Microscopy to determine their electron affinity and work function values. NEA values were observed on samples following annealing above 400 °C, with the largest NEA value being –0.9 eV for a sample coated with a half-monolayer of Ti annealed at 400 °C. Work function values were ∼4.5 eV for all samples annealed at temperatures between 400 and 600 °C, then rose at higher temperatures due to the loss of substantial amounts of O from the surface. Work-function maps indicated that the surface was uniform over areas 5700 μm2, suggesting that the deposition and annealing steps used are reliable methods to produce films with homogeneous surface properties.

Combining diamond with GaN can significantly improve the heat dissipation performance of GaN-based devices. However, how to avoid the destructive damage to the GaN epi-layer caused by high-temperature hydrogen plasma during the diamond growth is still a problem. This study employed a Si transition layer and double-substrate structure microwave plasma chemical vapor deposition (MPCVD) to prepare diamond film on GaN epi-layer. The effects of double-substrate structure on the diamond growth were studied. The microwave plasma parameters of both single-substrate structure and double-substrate structure MPCVD diagnosed by emission spectra were comparatively investigated. It has been found that the microwave plasma energy of double-substrate structure MPCVD is relatively more concentrated and has higher radicals activity, which is beneficial to the diamond growth. The impacts of the Si transition layer on the diamond growth were also investigated. It demonstrates that the Si transition layer can effectively protect the GaN epi-layer from being etched by hydrogen plasma and improve the diamond growth. The relationship between the thickness of the Si transition layer and the diamond growth and the relationship between diamond film thickness and adhesion has been studied in detail.

This article describes key material science/technology issues to implement polycrystalline diamond scaffolds to enable processes for biological cells growth relevant for using cells grown in the laboratory for the treatment of human biological conditions. Issues investigated include

A resonator with a high Q factor is generally pursued in the single-crystal diamond (SCD) microelectromechanical system (MEMS) for high-performance sensors. In this report, we investigate the oxygen etching effect of SCD on the Q factors of the SCD resonators by using the Raman spectroscopy spatial mapping. We aim to establish the etch pit effect on the Q factors of the SCD MEMS resonators. The 2D Raman imaging technique discloses the dislocations and the local stress in the SCD MEMS resonators in microscale. It is observed that the full width half maximum (FWHM) of the Raman spectra of the SCD resonators has marked relationship with the Q factors of the SCD resonators. The etch pits resulted from the dislocations have weak influence on the Q factors of the SCD resonators.

Antibiotic resistance in bacteria is a current threat causing an increasing number of infections of difficult clinical management. While the overuse and misuse of antibiotics are investigated to reduce them, the need for alternatives to approaches is rising. Carbon-based materials shown recent moderate to high antibacterial properties and diamond, thanks to its superior mechanical, tribological, electrical, chemical and biological quality is a choice material to investigate for safe antibacterial films, coatings and particles. Here, the antibacterial properties of diamond films, nanodiamonds, DLC films and a comprehensive list of the composites developed from them are discussed along with a summary of the bacterial strains used and the most efficient composition and/or concentration discovered. In a later stage, the mechanisms of action and the parameters that are believed to influence them are discussed and finally, an overview of the biomedical and food industry applications is given.