Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density

Cui Yu; Chuangjie Zhou; Jianchao Guo; Zezhao He; Mengyu Ma; Hao Yu; Xubo Song; Aimin Bu; Zhihong Feng

doi:10.1080/26941112.2022.2082853

Your Location：

Home >

Browse articles >

Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density

Research Article | Updated：2022-06-08

- Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density
- Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density
- Functional Diamond 2022年2卷第1期页码：64-70
- Affiliations：
  
  National Key Laboratory of ASIC Hebei Semiconductor Research Institute
- Author bio：
- Funds：
- DOI：10.1080/26941112.2022.2082853
  中图分类号：
- 网络首发：2022-06-08，
  
  纸质出版：2022
- Accepted：
Scan QR Code
Cui Yu, Chuangjie Zhou, Jianchao Guo, 等. Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density[J]. Functional Diamond, 2022,2(1):64-70.

Cui Yu, Chuangjie Zhou, Jianchao Guo, et al. Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density[J]. Functional Diamond2022, 2(1): 64-70.
Cui Yu, Chuangjie Zhou, Jianchao Guo, 等. Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density[J]. Functional Diamond, 2022,2(1):64-70. DOI： 10.1080/26941112.2022.2082853.

Cui Yu, Chuangjie Zhou, Jianchao Guo, et al. Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density[J]. Functional Diamond2022, 2(1): 64-70. DOI： 10.1080/26941112.2022.2082853.

摘要

Abstract

Diamond field-effect transistor (FET) has great application potential for high frequency and high power electronic devices. In this work

diamond FETs were fabricated on (0 0 1) single crystal diamond with homoepitaxial layer. The nitrogen impurity content in the homoepitaxial layer is greatly decreased as measured by the Raman and photoluminescence spectra. The diamond field effect transistor with 100 nm Al

as gate dielectric shows ohomic contact resistance of 35 Ω . mm

maximum drain saturation current density of 500 mA/mm

and maximum transconductance of 20.1 mS/mm. Due to the high quality of Al

gate dielectric and single crystal diamond substrate

the drain work voltage of −58 V is achieved for the diamond FETs. A continuous wave output power density of 4.2 W/mm at 2 GHz is obtained. The output power densities at 4 and 10 GHz are also improved and achieve 3.1 and 1.7 W/mm

respectively. This work shows the application potential of single crystal diamond for high frequency and high power electronic devices.

关键词

Keywords

references

Wort CJH, Balmer RS. Diamond as an electronic material. Mater Today. 2008;11(1–2):22–28. Web of Science ®Google Scholar

Yamasaki S, Gheeraert E, Koide Y. Doping and interface of homoepitaxial diamond for electronic applications. MRS Bull. 2014;39(6):499–503. Web of Science ®Google Scholar

Kawarada H, Aoki M, Ito M. Enhancement mode metal-semiconductor field effect transistors using homoepitaxial diamonds. Appl Phys Lett. 1994;65(12):1563–1565. Web of Science ®Google Scholar

Hirama K, Sato H, Harada Y, et al. Diamond field-effect transistors with 1.3 a/mm drain current density by Al2O3 passivation layer. Jpn J Appl Phys. 2012;51:090112. Web of Science ®Google Scholar

Kasu M, Ueda K, Ye H, et al. 2W/mm output power density at 1 GHz for diamond FETs. Electron Lett. 2005;41(22):1249–1250. Web of Science ®Google Scholar

Nebel CE, Rezek B, Zrenner A. Electrical properties of the 2D-hole accumulation layer on hydrogen terminated diamond. Diamond Relat Mater. 2004;13(11–12):2031–2036. Web of Science ®Google Scholar

Landstrass MI, Ravi KV. Hydrogen passivation of electrically active defects in diamond. Appl Phys Lett. 1989;55(14):1391–1393. Web of Science ®Google Scholar

Grot SA, Gildenblat GS, Hatfield HCW, et al. The effect of surface treatment on the electrical properties of metal contacts to boron doped homoepitaxial diamond film. IEEE Electron Device Lett. 1990;11(2):100–102. Web of Science ®Google Scholar

Imanishi S, Horikawa K, Oi N, et al. 3.8 W/mm RF power density for ALD Al2O3-based two-dimensional hole gas diamond MOSFET operating at saturation velocity. IEEE Electron Device Lett. 2019;40(2):279–282. Web of Science ®Google Scholar

Yu C, Zhou CJ, Guo JC, et al. 650 mW/mm output power density of H-terminated polycrystalline diamond MISFET at 10 GHz. Electron Lett. 2020;56(7):334–335. Web of Science ®Google Scholar

Ueda K, Kasu M, Yamauchi Y, et al. Diamond FET using high-quality polycrystalline diamond with fT of 45 GHz and fmax of 120 GHz. IEEE Electron Device Lett. 2006;27(7):570–572. Web of Science ®Google Scholar

Zhou CJ, Wang JJ, Guo JC, et al. Radiofrequency performance of hydrogenated diamond MOSFETs with alumina. Appl Phys Lett. 2019;114(6):063501. Web of Science ®Google Scholar

Jingu Y, Hirama K, Kawarada H. Ultrashallow TiC source/drain contacts in diamond MOSFETs formed by hydrogenation-last approach. IEEE Trans Electron Device. 2010;57(5):966–972. Web of Science ®Google Scholar

Kudara K, Imanishi S, Hiraiwa A, et al. High output power density of 2DHG diamond MOSFETs with thick ALD-Al2O3. IEEE Trans Electron Device. 2021;68(8):3942–3949. Web of Science ®Google Scholar

Kudara K, Arai M, Suzuki Y, et al. Over 1 A/mm drain current density and 3.6 W/mm output power density in 2DHG diamond MOSFETs with highly doped regrown source/drain. Carbon. 2022;188:220–228. Web of Science ®Google Scholar

Yamada H, Chayahara A, Mokuno Y, et al. A 2-in. mosaic wafer made of a single-crystal diamond. Appl Phys Lett. 2014;104(10):102110. Web of Science ®Google Scholar

Kim SW, Kawamata Y, Takaya R, et al. Growth of high-quality one-inch free-standing heteroepitaxial (0 0 1) diamond on (11–20) sapphire substrate. Appl Phys Lett. 2020;117(20):202102. Web of Science ®Google Scholar

Schreck M, Gsell S, Brescia R, et al. Ion bombardment induced buried lateral growth: the key mechanism for the synthesis of single crystal diamond wafers. Sci Rep. 2017;7:44462. PubMed Web of Science ®Google Scholar

Wang JJ, He ZZ, Yu C, et al. Comparison of field-effect transistors on polycrystalline and single-crystal diamonds. Diamond Relat Mater. 2014;43:43–48. Google Scholar

Schroder DK. 2006. Semiconductor material and device. New York: Wiley. (Sect. 6.2). Google Scholar

Saha NC, Kasu M. Heterointerface properties of diamond MOS structures studied using capacitance–voltage and conductance–frequency measurements. Diamond Relat Mater. 2019;91:219–224. Web of Science ®Google Scholar

Chen ZH, Fu Y, Kawarada H, et al. Microwave diamond devices technology: field-effect transistors and modeling. Int J Numer Model El. 2021; 34(3): 2800. Google Scholar

Yu XX, Hu WX, Zhou JJ, et al. 1 W/mm output power density for H-terminated diamond MOSFETs with Al2O3/SiO2 bi-layer passivation at 2 GHz. IEEE J Electron Device Soc. 2020;99:1. Google Scholar

Ivanov TG, Wei J, Shah PB, et al. Diamond RF transistor technology with ft = 41 GHz and fmax = 44 GHz. IEEE/MTT-S International Microwave Symposium. 2018. p. 1461. Google Scholar

Camarchia V, Cappelluti F, Ghione G, et al. RF power performance evaluation of surface channel diamond MESFETs. Solid State Electron. 2011;55(1):19–24. Web of Science ®Google Scholar

Kasu M, Ueda K, Ye H, et al. High RF output power for H-terminated diamond FETs. Diamond Rel Mater. 2006;15(4–8):783–786. Web of Science ®Google Scholar

Hirama K, Takayanagi H, Yamauchi S, et al. High-performance p-channel diamond MOSFETs with alumina gate insulator. IEEE International Electron Devices Meeting. 2007. p. 873. Google Scholar

Kubovic M, Kasu M, Kallfass I, et al. Microwave performance evaluation of diamond surface channel FETs. Diamond Rel Mater. 2004;13(4–8):802–807. Web of Science ®Google Scholar

Yu X, Hu W, Zhou J, et al. 1.26 W/mm output power density at 10 GHz for Si3N4 passivated H-terminated diamond MOSFETs. IEEE Trans Electron Device. 2021;68(10):5068–5072. Web of Science ®Google Scholar

Chen Z, Yu X, Zhou J, et al. Characterization of substrate-trap effects in hydrogen-terminated diamond metal-oxide-semiconductor field-effect transistors. IEEE Trans Electron Device. 2022;69(1):278–284. Web of Science ®Google Scholar

Wu Y, Moore M, Saxler A, et al. 40 W/mm double field-plated HEMTs. 2006 64th Device Research Conference. 2006. p. 151–152. Google Scholar

Tadjer M, Anderson T, Ancona M, et al. GaN-on-diamond HEMT technology with TAVG = 176 °C at PDC,max = 56 W/mm measured by transient thermoreflectance imaging. IEEE Electron Device Lett. 2019;40(6):881–884. Web of Science ®Google Scholar

Ohki T, Yamada A, Minoura Y, et al. An over 20-W/mm S-band InAlGaN/GaN HEMT with SiC/diamond-bonded heat spreader. IEEE Electron Device Lett. 2019;40(2):287–290. Web of Science ®Google Scholar

浏览量

Downloads

文章被引用时，请邮件提醒。

Submit

工具集

关联资源

All-solid continuous-wave Nd: YVO4-diamond intracavity Raman laser

Enhanced etching of GaN with N2 gas addition during CVD diamond growth

Shear-promoted graphite-to-diamond phase transition at the grain boundary of nanocrystalline graphite

Research on the epitaxial direction control and mechanism of polycrystalline diamond grains

Research Progress on Silicon Vacancy Color Centers in Diamond