The precise characterization of bulk properties of thin homoepitaxial diamond layers with micrometer thickness is difficult due to the interference from the substrate. In this work

we utilized smart-cut method to fabricate single-crystal diamond (SCD) cantilevers or plates and transferred them to a foreign substrate (SiO

2

/Si). The mechanical resonance of the SCD cantilevers was characterized to confirm that the ion-implantation-induced damaged layer was nearly removed under the cantilever. Raman

photoluminescence (PL)

and cathodoluminescence (CL) measurements were conducted on the transferred SCD cantilevers/plates and homoepitaxial layers on the substrate with and without ion implantation. As a result

it was found that both of the Raman spectral properties of the SCD layer on the ion-implanted regions and the freestanding SCD plates/cantilevers successfully avoid interference from the substrate. PL analysis showed no emission peaks attributable to nitrogen and other de

fects from the epilayers. Additionally

CL analysis from the freestanding cantilevers/plates disclosed the exciton emission at around 236 nm at room temperature. These results suggest the high crystal quality of the SCD cantilevers for MEMS applications.