Diamond and III-nitride wide-bandgap semiconductors: a research journey

Yasuo Koide

doi:10.1080/26941112.2025.2554126

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Diamond and III-nitride wide-bandgap semiconductors: a research journey

AC-Yasuo Koide: A Leading Scientist in Diamond and III-Nitrides Wide Bandgap Semiconductor Materials | Updated：2025-12-10

- Diamond and III-nitride wide-bandgap semiconductors: a research journey
- Vol. 5, Issue 1, (2025)
- Affiliations：
  
  Graduate School of Engineering and Technology Meijo University
- Author bio：
- Funds：
- DOI：10.1080/26941112.2025.2554126
  CLC：
- Published Online：05 September 2025，
  
  Published：05 September 2025
- Accepted：
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Yasuo Koide. Diamond and III-nitride wide-bandgap semiconductors: a research journey[J]. 2025, 5(1).
DOI：

Yasuo Koide. Diamond and III-nitride wide-bandgap semiconductors: a research journey[J]. 2025, 5(1). DOI： 10.1080/26941112.2025.2554126.

摘要

Abstract

My research progress to date is reviewed by focusing on III-nitride and diamond semiconductors within the scope of my limited experience. I have developed high-quality Al

1-x

N epitaxial layers

Ohmic contact materials for GaN and diamond

and diamond optical and electronic devices. While my research themes have changed at each university and national laboratory

I have been involved in semiconductor crystal growth

electrode formation

processing

and device development. I believe that my broad experience in materials research will lead to new discoveries in a variety of semiconductor fields.

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National Key Laboratory of ASIC Hebei Semiconductor Research Institute

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