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Hydrogen-terminated and oxygen-terminated diamond metal-oxide-semiconductor field-effect transistors
Review Article | Updated:2025-12-10
    • Hydrogen-terminated and oxygen-terminated diamond metal-oxide-semiconductor field-effect transistors

    • Vol. 5, Issue 1, (2025)
    • DOI:10.1080/26941112.2025.2551496    

      CLC:
    • Published Online:02 September 2025

      Published:02 September 2025

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  • Jiangwei Liu. Hydrogen-terminated and oxygen-terminated diamond metal-oxide-semiconductor field-effect transistors[J]. 2025, 5(1). DOI: 10.1080/26941112.2025.2551496.

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Related Author

Yasuo Koide
Bo Da
Tokuyuki Teraji
Jiangwei Liu
Meiyong Liao
Masataka Imura
Guo Chen
Keyun Gu

Related Institution

a Research Center for Electronic and Optical Materials National Institute for Materials Science (NIMS) Tsukuba
b Research and Services Division of Materials Data and Integrated System NIMS Tsukuba
Research Center for Functional Materials National Institute for Material Science Tsukuba
a National Institute for Materials Science Tsukuba Ibaraki Japan
b Department of Physics Hebei Normal University of Science and Technology Qinhuangdao
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