Epitaxial lateral growth of single-crystal diamond under high pressure by a plate-to-plate MPCVD

Wei Cao; Deng Gao; Hongyang Zhao; Zhibin Ma

doi:10.1080/26941112.2021.1947750

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Epitaxial lateral growth of single-crystal diamond under high pressure by a plate-to-plate MPCVD

Articles | Updated：2021-07-30

- Epitaxial lateral growth of single-crystal diamond under high pressure by a plate-to-plate MPCVD
- Functional Diamond Vol. 1, Issue 1, Pages: 143-149(2021)
- Affiliations：
  
  Department of Material Science and Engineering Hubei Key Laboratory of Plasma Chemistry & Advanced Materials Wuhan Institute of Technology
- Author bio：
- Funds：
- DOI：10.1080/26941112.2021.1947750
  CLC：
- Online First：30 July 2021，
  
  Published：2021
- Accepted：
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Wei Cao, Deng Gao, Hongyang Zhao, et al. Epitaxial lateral growth of single-crystal diamond under high pressure by a plate-to-plate MPCVD[J]. Functional Diamond2021, 1(1): 143-149.
DOI：

Wei Cao, Deng Gao, Hongyang Zhao, et al. Epitaxial lateral growth of single-crystal diamond under high pressure by a plate-to-plate MPCVD[J]. Functional Diamond2021, 1(1): 143-149. DOI： 10.1080/26941112.2021.1947750.

摘要

Abstract

The epitaxial lateral growth of single-crystal diamond (SCD) using a plate-to-plate microwave plasma chemical vapor deposition (MPCVD) reactor under high pressure is investigated. The radicals’ distribution in H

/CH

plasma as a function of pressure was locally detected by optical emission spectroscopy (OES). Raman spectroscopy and optical microscope were employed to analyze the properties of SCD deposited in different pressure. The OES results show that radicals’ distribution along the substrate direction is symmetrical under 20 kPa pressure. The symmetrical distribution of radicals at 20 kPa is in favor of epitaxial lateral growth SCD around the seed and without polycrystalline diamond (PCD) rim. When the pressure is increased to 21.5 kPa

the optical emission spectra center of plasma shifts close to the microwave reflector where is far away from the microwave source. The contact state between the diamond seed and the plasma is deteriorated and the PCD rim occurs in the plasma uncovered area. While the epitaxial lateral growth pattern occurs in the plasma covered area and the lateral growth rate of this region improves with the increase of pre

ssure. A higher growth rate does not result in good quality; meanwhile

the diamond growth step spacing and direction become inconsistent in the transition zone as a function of pressure increasing. Finally

the overall effective lateral expansion area does not increase with the improvement of pressure. Therefore

the uniform and symmetrical distributed plasma is more conducive to the epitaxial lateral growth of SCD

and the effective expansion growth SCD can be realized at 20 kPa.

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references

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