In this study

2-inch single-crystal diamond (SCD) was fabricated

via

mosaic growth and laser stealth dicing. First

the growth behavior of 2 inch-scale diamond in an enclosed substrate holder was simulated

obtaining the spatial conditions conducive to continuous growth of large-area SCD. Subsequently

SCD wafers with dimensions of 50 × 25 mm

2

and 48 × 48 mm

2

were assembled through mosaic growth. Finally

the 48 × 48 mm

2

SCD wafer was successfully and rapidly (approximately 40 min) detached by laser stealth dicing technology with a subsurface damage layer thickness of less than 100 micrometers.