Opticalpropertiesofsingle-crystaldiamondMEMS:mitigatingsubstrateinterference

Keyun Gu; Zilong Zhang; Zhaozong Zhang; Jian Huang; Yasuo Koide; Satoshi Koizumi; Meiyong Liao

doi:10.1080/26941112.2025.2570362

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Opticalpropertiesofsingle-crystaldiamondMEMS:mitigatingsubstrateinterference

Research Article | Updated：2025-12-10

- Opticalpropertiesofsingle-crystaldiamondMEMS:mitigatingsubstrateinterference
- Optical properties of single-crystal diamond MEMS: mitigating substrate interference
- Functional Diamond 2025年第1期
- Affiliations：
  
  1. a School of Materials Science and Engineering Shanghai University Shanghai China
  2. b Research Center for Electronic and Optical Materials National Institute for Materials Science
  3. a School of Materials Science and Engineering Shanghai University
- Author bio：
- Funds：
- DOI：10.1080/26941112.2025.2570362
  中图分类号：
- 网络出版：2025-10-21，
  
  纸质出版：2025-10-21
- Accepted：
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Keyun Gu, Zilong Zhang, Zhaozong Zhang, 等. Opticalpropertiesofsingle-crystaldiamondMEMS:mitigatingsubstrateinterference[J]. Functional Diamond, 2025,(1).

Keyun Gu, Zilong Zhang, Zhaozong Zhang, et al. Optical properties of single-crystal diamond MEMS: mitigating substrate interference[J]. 2025, (1).
Keyun Gu, Zilong Zhang, Zhaozong Zhang, 等. Opticalpropertiesofsingle-crystaldiamondMEMS:mitigatingsubstrateinterference[J]. Functional Diamond, 2025,(1). DOI： 10.1080/26941112.2025.2570362.

Keyun Gu, Zilong Zhang, Zhaozong Zhang, et al. Optical properties of single-crystal diamond MEMS: mitigating substrate interference[J]. 2025, (1). DOI： 10.1080/26941112.2025.2570362.

摘要

Abstract

The precise characterization of bulk properties of thin homoepitaxial diamond layers with micrometer thickness is difficult due to the interference from the substrate. In this work

we utilized smart-cut method to fabricate single-crystal diamond (SCD) cantilevers or plates and transferred them to a foreign substrate (SiO

/Si). The mechanical resonance of the SCD cantilevers was characterized to confirm that the ion-implantation-induced damaged layer was nearly removed under the cantilever. Raman

photoluminescence (PL)

and cathodoluminescence (CL) measurements were conducted on the transferred SCD cantilevers/plates and homoepitaxial layers on the substrate with and without ion implantation. As a result

it was found that both of the Raman spectral properties of the SCD layer on the ion-implanted regions and the freestanding SCD plates/cantilevers successfully avoid interference from the substrate. PL analysis showed no emission peaks attributable to nitrogen and other de

fects from the epilayers. Additionally

CL analysis from the freestanding cantilevers/plates disclosed the exciton emission at around 236 nm at room temperature. These results suggest the high crystal quality of the SCD cantilevers for MEMS applications.

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