Hydrogen-terminatedandoxygen-terminateddiamondmetal-oxide-semiconductorfield-effecttransistors

Jiangwei Liu

doi:10.1080/26941112.2025.2551496

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Hydrogen-terminatedandoxygen-terminateddiamondmetal-oxide-semiconductorfield-effecttransistors

Review Article | Updated：2025-12-10

- Hydrogen-terminatedandoxygen-terminateddiamondmetal-oxide-semiconductorfield-effecttransistors
- Hydrogen-terminated and oxygen-terminated diamond metal-oxide-semiconductor field-effect transistors
- Functional Diamond 2025年5卷第1期
- Affiliations：
  
  Research Center for Electronic and Optical Materials National Institute for Materials Science (NIMS) Tsukuba
- Author bio：
- Funds：
- DOI：10.1080/26941112.2025.2551496
  中图分类号：
- 网络出版：2025-09-02，
  
  纸质出版：2025-09-02
- Accepted：
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Jiangwei Liu. Hydrogen-terminatedandoxygen-terminateddiamondmetal-oxide-semiconductorfield-effecttransistors[J]. Functional Diamond, 2025,5(1).

Jiangwei Liu. Hydrogen-terminated and oxygen-terminated diamond metal-oxide-semiconductor field-effect transistors[J]. 2025, 5(1).
Jiangwei Liu. Hydrogen-terminatedandoxygen-terminateddiamondmetal-oxide-semiconductorfield-effecttransistors[J]. Functional Diamond, 2025,5(1). DOI： 10.1080/26941112.2025.2551496.

Jiangwei Liu. Hydrogen-terminated and oxygen-terminated diamond metal-oxide-semiconductor field-effect transistors[J]. 2025, 5(1). DOI： 10.1080/26941112.2025.2551496.

摘要

Abstract

Extensive research has been conducted on wide-bandgap semiconductor diamond for the advancement of high-power

high-frequency

and high-temperature electronic devices. The author has established long-term collaboration with Prof. Koide

focusing on producing

-type hydrogen-terminated diamond (H-diamond) and boron-doped oxygen-terminated diamond (O-diamond) based metal-oxide-semiconductor field-effect transistors (MOSFETs). This article presents our primary research findings on the fabrication of enhancement-mode H-diamond MOSFETs and MOSFET logic circuits

as well as the high-temperature operation of the boron-doped O-diamond MOSFETs.

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