GrowingandpolishingmethodsaimingatCVDdiamondwaferover10-inch

Haochen Zhang; Zengyu Yan; Hanxu Zhang; Guangchao Chen

doi:10.1080/26941112.2025.2523762

Your Location：

Home >

Browse articles >

GrowingandpolishingmethodsaimingatCVDdiamondwaferover10-inch

Review Article | Updated：2025-12-10

- GrowingandpolishingmethodsaimingatCVDdiamondwaferover10-inch
- Growing and polishing methods aiming at CVD diamond wafer over 10-inch
- Functional Diamond 2025年5卷第1期
- Affiliations：
  
  College of Materials Science and Opto-electronic Technology University of Chinese Academy of Sciences
- Author bio：
- Funds：
- DOI：10.1080/26941112.2025.2523762
  中图分类号：
- 网络出版：2025-07-02，
  
  纸质出版：2025-07-02
- Accepted：
Scan QR Code
Haochen Zhang, Zengyu Yan, Hanxu Zhang, 等. GrowingandpolishingmethodsaimingatCVDdiamondwaferover10-inch[J]. Functional Diamond, 2025,5(1).

Haochen Zhang, Zengyu Yan, Hanxu Zhang, et al. Growing and polishing methods aiming at CVD diamond wafer over 10-inch[J]. 2025, 5(1).
Haochen Zhang, Zengyu Yan, Hanxu Zhang, 等. GrowingandpolishingmethodsaimingatCVDdiamondwaferover10-inch[J]. Functional Diamond, 2025,5(1). DOI： 10.1080/26941112.2025.2523762.

Haochen Zhang, Zengyu Yan, Hanxu Zhang, et al. Growing and polishing methods aiming at CVD diamond wafer over 10-inch[J]. 2025, 5(1). DOI： 10.1080/26941112.2025.2523762.

摘要

Abstract

Flat-surfaced and large-size diamond wafers are essential for industrial applications

analogous to silicon (Si) wafers over 10-inch. A promising approach for the industrial-scale production of large-size diamond wafers involves chemical vapor deposition (CVD) techniques that generate large-area plasma. This article explores the growing and polishing methods aiming at CVD diamond wafers over 10-inch

based on our previous works and existing literature. The continuous growing strategy is proposed by combining radio frequency induction coupled plasma-enhanced CVD (RFICP CVD) and repositionable (or movable) substrate based on the Van der Drift growth mechanism. Molten iron erosion polishing (MIEP) is considered a method capable of polishing wafers over 10-inch due to its high material removal rate (MRR)

size-unlimited

great stress-released

and damage-free characteristics. The proposed methodology lays the foundation for manufacturing flat-surfaced

large-sized diamond wafers for application-oriented purposes.

关键词

Keywords

references

浏览量

Downloads

文章被引用时，请邮件提醒。

Submit

工具集

关联资源

The polishing methods for large area CVD diamond wafer