The intersection of the Fermi and impurity levels in the Schottky junction of boron-doped p-type diamond

a widely used p-type doping scheme for diamond

has been discovered. This indicates that the relationship between the ionization efficiency of boron impurities and their position in the junction region cannot be ignored when analyzing this type of junction. Owing to the assumption of the complete ionization of impurities in the junction region

the traditional Schottky analysis model is no longer suitable. In this study

an improved model was developed in which the ionization concentration is a function of position in the junction region instead of doping concentration in the traditional model. Physical characteristics such as the depletion layer width

electric field strength

and potential of boron-doped diamond Schottky junction were analyzed successfully. Furthermore

when analyzing phosphorus-doped silicon Schottky junctions

the traditional and improved models obtained almost identical results

indicating that the improved model is universal for analyzing Schottky junctions of all semiconductor materials. Wide-bandgap semiconductor materials generally face doping difficulties

and deep level impurities are common. This study provides a timely theoretical basis for the rapidly development of wide-bandgap semiconductor technologies.