Enhanced etching of GaN with N2 gas addition during CVD diamond growth

Awadesh Kumar Mallik; Giridharan Krishnamurthy; Wen-Ching Shih; Paulius Pobedinskas; Jan D’Haen; Ken Haenen

doi:10.1080/26941112.2024.2393817

Your Location：

Home >

Browse articles >

Enhanced etching of GaN with N2 gas addition during CVD diamond growth

Research Article | Updated：2025-01-22

- Enhanced etching of GaN with N2 gas addition during CVD diamond growth
- Enhanced etching of GaN with N2 gas addition during CVD diamond growth
- Functional Diamond 2024年4卷第1期
- Affiliations：
  
  1. b IMEC vzw IMOMEC
  2. a Institute for Materials Research (IMO) Hasselt University Diepenbeek Belgium
  3. c Department of Electrical Engineering Tatung University
- Author bio：
- Funds：
- DOI：10.1080/26941112.2024.2393817
  中图分类号：
- 网络首发：2024-08-21，
  
  纸质出版：2024
- Accepted：
Scan QR Code
Awadesh Kumar Mallik, Giridharan Krishnamurthy, Wen-Ching Shih, 等. Enhanced etching of GaN with N2 gas addition during CVD diamond growth[J]. Functional Diamond, 2024,4(1).

Awadesh Kumar Mallik, Giridharan Krishnamurthy, Wen-Ching Shih, et al. Enhanced etching of GaN with N2 gas addition during CVD diamond growth[J]. Functional Diamond2024, 4(1).
Awadesh Kumar Mallik, Giridharan Krishnamurthy, Wen-Ching Shih, 等. Enhanced etching of GaN with N2 gas addition during CVD diamond growth[J]. Functional Diamond, 2024,4(1). DOI： 10.1080/26941112.2024.2393817.

Awadesh Kumar Mallik, Giridharan Krishnamurthy, Wen-Ching Shih, et al. Enhanced etching of GaN with N2 gas addition during CVD diamond growth[J]. Functional Diamond2024, 4(1). DOI： 10.1080/26941112.2024.2393817.

摘要

Abstract

Diamond on GaN materials processing is not straight-forward

as GaN is susceptible to a quasi-pure hydrogen CVD plasma etching. 1%

3% and 5% N

gas was gradually added to the H

gas with fixed 6% CH

in the recipe to promote the growth of diamond nanocrystals. Different types of microstructures were produced

with addition of nitrogen to the precursor gas recipe. Nitrogen gas changes the diamond film microstructure from faceted to spherical grains

with signs of GaN etching. The FWHM of the sp

carbon Raman peak was calculated to be 6.5 cm

−1

when there was no nitrogen gas in the precursor recipe

which deteriorates to a large extent after successive addition of N

. Fourier transform infrared spectroscopy (FTIR) showed a strong presence of the nitrogen related defects (peak positions at 1190 and 1299 cm

−1

) inside the nanocrystalline diamond (NCD) films grown with N

addition. GaN layer etching from the base substrate by the CVD plasma was clearly evidenced by energy dispersive X-ray spectra (EDS) of the deposited films. Al elemental EDS peaks from the base sapphire substrate were observed

for the films grown with nitrogen addition

but no Ga EDS peaks were detected. X-ray diffraction (XRD) micrographs further supported the enhanced GaN etching phenomenon. The electrical resistivity of the uncoated GaN was initially measured to be 22.2 Ω-cm. However

the resistivity rose to 1.59 × 10

Ω-cm after the nitrogen assisted film deposition; due to the GaN etching - thereby exposing the underlying insulating sapphire substrate.

关键词

Keywords

references

Kozak JP, Zhang R, Porter M, et al. Stability, reliability, and robustness of GaN power devices: a review. IEEE Trans Power Electron. 2023;38(open in a new window)(7(open in a new window)):8442–8471. https://doi.org/10.1109/TPEL.2023.3266365. (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Hu J, Zhang Y, Sun M, et al. Materials and processing issues in vertical GaN power electronics. Mater Sci Semicond Process. 2018;78(open in a new window):75–84. https://doi.org/10.1016/j.mssp.2017.09.033 (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Lee WS, et al. 2019 IEEE MTT-S international microwave symposium (IMS), A GaN/Diamond HEMTs with 23 W/mm for Next Generation High Power RF Application. Boston, MA, USA; 2019. p. 1395–1398. https://doi.org/10.1109/MWSYM.2019.8700882. (Open in a new window)Google Scholar

Cuenca JA, Smith MD, Field DE, et al. Thermal stress modelling of diamond on GaN/III-nitride membranes. Carbon. 2021;174(open in a new window):647–661. https://doi.org/10.1016/j.carbon.2020.11.067 (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Mahrokh M, Yu H, Guo Y. Thermal modeling of GaN HEMT devices with diamond heat-spreader. IEEE J Electron Devices Soc. 2020;8(open in a new window):986–991. https://doi.org/10.1109/JEDS.2020.3023081. (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Liang J, Kobayashi A, Shimizu Y, et al. Fabrication of GaN/diamond heterointerface and interfacial chemical bonding state for highly efficient device design. Adv Mater. 2021;33(open in a new window)(43(open in a new window)):e2104564. https://doi.org/10.1002/adma.202104564. Epub 2021 Sep 9. PMID: 34498296. (Open in a new window)PubMed (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Mandal S, Thomas ELH, Middleton C, et al. Surface zeta potential and diamond seeding on gallium nitride films. ACS Omega. 2017;2(open in a new window)(10(open in a new window)):7275–7280. http://dx.doi.org/10.1021/acsomega.7b01069. (Open in a new window)PubMed (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Smith EJW, Piracha AH, Field D, et al. Mixed-size diamond seeding for low-thermal-barrier growth of CVD diamond onto GaN and AlN. Carbon. 2020;167(open in a new window):620–626. https://doi.org/10.1016/j.carbon.2020.05.050 (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

May PW, Tsai HY, Wang WN, et al. Deposition of CVD diamond onto GaN. Diam Relat Mater. 2006;15(open in a new window)(4-8(open in a new window)):526–530. https://doi.org/10.1016/j.diamond.2005.11.036 (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Izsak T, et al. Direct deposition of CVD diamond layers on top of GaN membranes, proceedings, 56, 35; 2020. https://doi.org/10.3390/proceedings2020056035 (Open in a new window)Google Scholar

Francis D, Kuball M. 14 - GaN-on-diamond materials and device technology: a review. In: Tadjer MJ, Anderson TJ, editors. Woodhead publishing series in electronic and optical materials, thermal management of gallium nitride electronics. Sawston, United Kingdom: Woodhead Publishing; 2022. p. 295–331. https://doi.org/10.1016/B978-0-12-821084-0.00006-8. (Open in a new window)Google Scholar

Zhan T, Xu M, Cao Z, et al. Effects of thermal boundary resistance on thermal management of gallium-nitride-based semiconductor devices: a review. Micromachines. 2023;14(open in a new window)(11(open in a new window)):2076. https://doi.org/10.3390/mi14112076. (Open in a new window)PubMed (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Mendes JC, Liehr M, Li C. Diamond/GaN HEMTs: where from and Where to? Materials (Basel). 2022;15(open in a new window)(2(open in a new window)):415. https://doi.org/10.3390/ma15020415. (Open in a new window)PubMed (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Wort CJH, Balmer RS. Diamond as an electronic material. Mater Today. 2008;11(1-2):22–28. (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Kohn E, Denisenko A. Concepts for diamond electronics. Thin Solid Films. 2007;515(open in a new window)(10(open in a new window)):4333–4339. https://doi.org/10.1016/j.tsf.2006.07.179. (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Markham ML, Dodson JM, Scarsbrook GA, et al. CVD diamond for spintronics. Diamond Relat Mater. 2011;20(open in a new window)(2(open in a new window)):134–139. https://doi.org/10.1016/j.diamond.2010.11.016. (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Ueda K, Soumiya T, Asano H. Ferromagnetic Schottky junctions using diamond semiconductors. Diamond Relat Mater. 2012;25(open in a new window):159–162. https://doi.org/10.1016/j.diamond.2012.02.015. (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Ueda K, Kawamoto K, Asano H. High-temperature and high-voltage characteristics of Cu/diamond Schottky diodes. Diamond & Relat Mater. 2015;57(open in a new window):28–31. http://dx.doi.org/10.1016/j.diamond.2015.03.006. (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Isberg J. AIP conference proceedings 1292; Diamond Electronic Devices. 2010. p. 123. https://doi.org/10.1063/1.3518277 (Open in a new window)Google Scholar

Liu D, Sun H, Pomeroy JW, et al. GaN-on-diamond electronic device reliability: mechanical and thermo-mechanical integrity. Appl. Phys. Lett. 2015;107(open in a new window)(25(open in a new window)):251902. https://doi.org/10.1063/1.4938002 (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Umezawa H. Recent advances in diamond power semiconductor devices. Mater Sci Semicond Process. 2018;78(open in a new window):147–156. https://doi.org/10.1016/j.mssp.2018.01.007. (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Malakoutian M, et al. Lossless phonon transition through GaN-diamond and si-diamond interfaces. Adv. Electron. Mater. 2024:2400146. https://doi.org/10.1002/aelm.202400146. (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Zhang C, Vispute RD, Fu K, et al. A review of thermal properties of CVD diamond films. J Mater Sci. 2023;58(open in a new window)(8(open in a new window)):3485–3507. https://doi.org/10.1007/s10853-023-08232-w (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Sakane S, Ishibe T, Yukawa Y, et al. Thermoelectric properties of B-doped nanostructured bulk diamond with lowered thermal conductivity. Diamond Relat Mater. 2023;140(open in a new window)(Part A(open in a new window)):110410. https://doi.org/10.1016/j.diamond.2023.110410. (Open in a new window)Google Scholar

Rozita R, Kamatchi JS, Paulius P, et al. Advances in n-type chemical vapor deposition diamond growth: morphology and dopant control. Acc Mater Res. 2024;

FULL TEXT LINK

浏览量

Downloads

文章被引用时，请邮件提醒。

Submit

工具集

关联资源

Research progress of spectra and properties of ultrahard carbon materials at high pressure and high temperature

Effect of substrate roughness on the nucleation and growth behaviour of microwave plasma enhanced CVD diamond films – a case study

Diamond dislocations analysis by X-ray topography

Single-crystal diamond growth by hot-filament CVD: a recent advances for doping, growth rate and defect controls

Properties, mechanism and applications of diamond as an antibacterial material