Research on the epitaxial direction control and mechanism of polycrystalline diamond grains

Li Junpeng; Ren Zeyang; Zhang Jinfeng; Zhang Jincheng; Su Kai; Meng Jintao; Zhu Liaoliang; Li Yijiang; Chen Junfei; Wang Hanxue; Hao Yue

doi:10.1080/26941112.2024.2346083

Your Location：

Home >

Browse articles >

Research on the epitaxial direction control and mechanism of polycrystalline diamond grains

Research Article | Updated：2025-01-22

- Research on the epitaxial direction control and mechanism of polycrystalline diamond grains
- Research on the epitaxial direction control and mechanism of polycrystalline diamond grains
- Functional Diamond 2024年4卷第1期
- Affiliations：
  
  1. a National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology Xidian University Xi’an China
  2. a National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology Xidian University
  3. b Xidian-Wuhu Research Institute
- Author bio：
- Funds：
- DOI：10.1080/26941112.2024.2346083
  中图分类号：
- 网络首发：2024-05-10，
  
  纸质出版：2024
- Accepted：
Scan QR Code
Li Junpeng, Ren Zeyang, Zhang Jinfeng, 等. Research on the epitaxial direction control and mechanism of polycrystalline diamond grains[J]. Functional Diamond, 2024,4(1).

Li Junpeng, Ren Zeyang, Zhang Jinfeng, et al. Research on the epitaxial direction control and mechanism of polycrystalline diamond grains[J]. Functional Diamond2024, 4(1).
Li Junpeng, Ren Zeyang, Zhang Jinfeng, 等. Research on the epitaxial direction control and mechanism of polycrystalline diamond grains[J]. Functional Diamond, 2024,4(1). DOI： 10.1080/26941112.2024.2346083.

Li Junpeng, Ren Zeyang, Zhang Jinfeng, et al. Research on the epitaxial direction control and mechanism of polycrystalline diamond grains[J]. Functional Diamond2024, 4(1). DOI： 10.1080/26941112.2024.2346083.

摘要

Abstract

The control of diamond film growth is crucial for the application of diamond films. In this article

different diamond film samples were prepared by adding nitrogen and oxygen in different proportions during the growth process. The key conditions for controlling the growth of diamond film with preferred orientation were obtained using scanning electron microscopy (SEM)

X-ray diffraction (XRD)

and Raman spectroscopy characterizations. During the growth process

the growth of the diamond film with (100) preferred orientation could be achieved by adjusting nitrogen content. It was necessary to introduce nitrogen and oxygen in the growth process

and precisely regulate the ratio of the two to obtain the (111) preferred orientation of the diamond film. When only oxygen was introduced during growth

the preferred orientation of the diamond could not be achieved

leading to a smaller grain size and poorer crystal quality. From the perspective of grain morphology to film morphology evolution

this study obtained the crystal orientation control conditions during the diamond film growth

which has important guiding significance for the application of the diamond film. This study seeks to drive progress in the large-scale growth of readily machinable diamond and the evolution of diamond-grain optical fiber sensing through comprehensive investigations into the correlation between the preferred orientation in polycrystalline diamonds and reaction conditions.

关键词

Keywords

references

Yamamoto Y, Imai T, Tanabe K, et al. The measurement of thermal properties of diamond. Diamond Relat Mater. 1997;6(open in a new window)(8(open in a new window)):1057–1061. doi:10.1016/S0925-9635(96)00772-8. (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Kania DR, Landstrass MI, Plano MA, et al. Diamond radiation detectors. Diamond Relat Mater. 1993;2(open in a new window)(5–7(open in a new window)):1012–1019. doi:10.1016/0925-9635(93)90266-5. (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Isberg J, Hammersberg J, Johansson E, et al. High carrier mobility in single-crystal plasma-deposited diamond. Science. 2023;297(open in a new window)(5587(open in a new window)):1670–1672. doi:10.1126/science.1074374. (Open in a new window)Google Scholar

Yu S-J, Kang M-W, Chang H-C, et al. Bright fluorescent nanodiamonds: no photobleaching and low cytotoxicity. J Am Chem Soc. 2005;127(50):17604–17605. (Open in a new window)PubMed (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Pingault B, Jarausch DD, Hepp C, et al. Coherent control of the silicon-vacancy spin in diamond. Nat Commun. 2017;8(open in a new window)(1(open in a new window)):15579. doi:10.1038/ncomms15579. (Open in a new window)PubMed(Open in a new window)Google Scholar

Rose BC, Huang D, Zhang ZH, et al. Observation of an environmentally insensitive solid-state spin defect in diamond. Science. 2018;361(6397):60–63. (Open in a new window)PubMed (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Wild C, Kohl R, Herres N, et al. Oriented CVD diamond films: twin formation, structure and morphology. Diamond Relat Mater. 1994;3(open in a new window)(4–6(open in a new window)):373–381. doi:10.1016/0925-9635(94)90188-0. (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Yang B, Li H, Yu B, et al. Bright silicon vacancy centers in diamond/SiC composite films synthesized by a MPCVD method. Carbon. 2021;171(open in a new window):455–463. doi:10.1016/j.carbon.2020.09.032. (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Jelezko F, Wrachtrup J. Single defect centres in diamond: a review. Phys Status Solidi (a). 2006;203(open in a new window)(13(open in a new window)):3207–3225. doi:10.1002/PSSA.200671403. (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Nakano Y, Zhang X, Kobayashi K, et al. Impact of nitrogen doping on homoepitaxial diamond (111) growth. Diamond Relat Mater. 2022;125(open in a new window):108997. doi:10.1016/j.diamond.2022.108997. (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Yu C, Zhou C, Guo J, et al. Hydrogen-terminated diamond MOSFETs on (001) single crystal diamond with state of the art high RF power density. Funct Diamond. 2022;2(open in a new window)(1(open in a new window)):64–70. doi:10.1080/26941112.2022.2082853. (Open in a new window)Google Scholar

Fogarty F, Fox NA, May PW. Experimental studies of electron affinity and work function from titanium on oxidised diamond (100) surfaces. Funct Diamond. 2022;2(1):103–111. (Open in a new window)Google Scholar

Li JP, Ren ZY, Zhang JF, et al. Formation mechanism and regulation of silicon vacancy centers in polycrystalline diamond films. Acta Phys Sin. 2023;72(3):038102. (Open in a new window)Google Scholar

Zhang JF, Xu JM, Ren ZY, et al. Characteristics of hydrogen-terminated single crystalline diamond field effect transistors with different surface orientations. Acta Phys Sin. 2020;69(2):028101. (Open in a new window)Google Scholar

Liu T, Raabe D. Influence of nitrogen doping on growth rate and texture evolution of chemical vapor deposition diamond films. Appl Phys Lett. 2009;94(open in a new window)(2(open in a new window)):021119. doi:10.1063/1.3072601. (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Wang J-J, Lü F-X Effect of pressure on the nucleation of diamond with addition of oxygen in the microwave plasma chemical vapor deposition system. Chin Phys Lett. 2008;13(open in a new window)(6(open in a new window)):473–476. doi:10.1088/0256-307X/13/6/020. (Open in a new window)Google Scholar

Shimaoka T, Yamada H, Mokuno Y, et al. Oxygen concentration dependence in microwave plasma‐enhanced chemical vapor deposition diamond growth in the (H, C, O, N) system. Phys Status Solidi (a). 2022;219(open in a new window)(11(open in a new window)):2100887. doi:10.1002/pssa.202100887. (Open in a new window)PubMed (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Harris SJ, Weiner AM. Effects of oxygen on diamond growth. Appl Phys Lett. 1989;55(open in a new window)(21(open in a new window)):2179–2181. doi:10.1063/1.102350. (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Gómez-Aleixandre C, García MM, Sánchez O, et al. Influence of oxygen on the nucleation and growth of diamond films. Thin Solid Films. 1997;303(open in a new window)(1–2(open in a new window)):34–38. doi:10.1016/S0040-6090(97)00090-4. (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Yu Z, Karlsson U, Flodström A. Influence of oxygen and nitrogen on the growth of hot-filament chemical vapor deposited diamond films. Thin Solid Films. 1999;342(open in a new window)(1–2(open in a new window)):74–82. doi:10.1016/S0040-6090(98)01352-2. (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Neto MA, Pereira E. Influence of oxygen and nitrogen addition during growth of CVD diamond on pure cobalt substrates. Diamond Relat Mater. 2006;15(open in a new window)(4–8(open in a new window)):465–471. doi:10.1016/j.diamond.2005.09.015. (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Tang CJ, Neves AJ, Pereira S, et al. Effect of nitrogen and oxygen addition on morphology and texture of diamond films (from polycrystalline to nanocrystalline). Diamond Relat Mater. 2008;17(open in a new window)(1(open in a new window)):72–78. doi:10.1016/j.diamond.2007.10.022. (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Silva F, Bonnin X, Achard J, et al. Geometric modeling of homoepitaxial CVD diamond growth: i. The {1 0 0}{1 1 1}{1 1 0}{1 1 3} system. J Cryst Growth. 2008;310(open in a new window)(1(open in a new window)):187–203. doi:10.1016/j.jcrysgro.2007.09.044. (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Silva F, Achard J, Bonnin X, et al. Single crystal CVD diamond growth strategy by the use of a 3D geometrical model: growth on (113) oriented substrates. Diamond Relat Mater. 2008;17(open in a new window)(7–10(open in a new window)):1067–1075. doi:10.1016/j.diamond.2008.01.006. (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

Cheesman A, Harvey JN, Ashfold MNR. Studies of carbon incorporation on the diamond {100} surface during chemical vapor deposition using density functional theory. J Phys Chem A. 2008;112(open in a new window)(45(open in a new window)):11436–11448. doi:10.1021/jp8034538. (Open in a new window)PubMed (Open in a new window)Web of Science ®(Open in a new window)Google Scholar

FULL TEXT LINK

浏览量

Downloads

文章被引用时，请邮件提醒。

Submit

工具集

关联资源

All-solid continuous-wave Nd: YVO4-diamond intracavity Raman laser

Enhanced etching of GaN with N2 gas addition during CVD diamond growth

Shear-promoted graphite-to-diamond phase transition at the grain boundary of nanocrystalline graphite

Research Progress on Silicon Vacancy Color Centers in Diamond

Research progress of spectra and properties of ultrahard carbon materials at high pressure and high temperature