Preferential orientation of diamond formation on TaC: Diamond(111)//TaC(111)

Shaohua Lu; Xiongtao Zhang; Yuhao Zheng; Meiyan Jiang; Chengke Chen; Xiaojun Hu

doi:10.1080/26941112.2023.2300764

Your Location：

Home >

Browse articles >

Preferential orientation of diamond formation on TaC: Diamond(111)//TaC(111)

Research Article | Updated：2025-01-22

- Preferential orientation of diamond formation on TaC: Diamond(111)//TaC(111)
- Preferential orientation of diamond formation on TaC: Diamond(111)//TaC(111)
- Functional Diamond 2024年4卷第1期
- Affiliations：
  
  1. a College of Materials Science and Engineering Zhejiang University of Technology Hangzhou People’s Republic of China
  2. b Moganshan Diamond Research Center De Qing Hu Zhou People’s Republic of China
  3. c Diamond Joint Research Center for Zhejiang University of Technology and Tanghe Scientific & Technology Company De Qing
- Author bio：
- Funds：
- DOI：10.1080/26941112.2023.2300764
  中图分类号：
- 网络首发：2024-03-04，
  
  纸质出版：2024
- Accepted：
Scan QR Code
Shaohua Lu, Xiongtao Zhang, Yuhao Zheng, 等. Preferential orientation of diamond formation on TaC: Diamond(111)//TaC(111)[J]. Functional Diamond, 2024,4(1).

Shaohua Lu, Xiongtao Zhang, Yuhao Zheng, et al. Preferential orientation of diamond formation on TaC: Diamond(111)//TaC(111)[J]. Functional Diamond2024, 4(1).
Shaohua Lu, Xiongtao Zhang, Yuhao Zheng, 等. Preferential orientation of diamond formation on TaC: Diamond(111)//TaC(111)[J]. Functional Diamond, 2024,4(1). DOI： 10.1080/26941112.2023.2300764.

Shaohua Lu, Xiongtao Zhang, Yuhao Zheng, et al. Preferential orientation of diamond formation on TaC: Diamond(111)//TaC(111)[J]. Functional Diamond2024, 4(1). DOI： 10.1080/26941112.2023.2300764.

摘要

Abstract

Experimental results showed that for the diamond film prepared by hot filament chemical vapor deposition (HFCVD) using Ta filament

TaC existed between diamond and the silicon substrate

and diamond grew directly on TaC

while the inherent mechanism was not clear. Here

a special coherent interface Diamond(111)//TaC(111) is observed using high resolution transmission electron microscopy

and then we explore the effects of the TaC with different lattice planes on the diamond formation by first-principle calculations. The results show that C tends to adsorb on the TaC(111) C-terminated surface. The strong covalent bond between C from diamond and Ta from TaC is formed in the Diamond(111)//TaC(111) interface

while only C–C covalent bonds are formed at the Graphite(002)/TaC(111). This makes diamond thermodynamically more stable than graphite on the TaC surfaces. Our investigations provide critical information to understand the complex diamond formation mechanism

especially with the presence of TaC.

关键词

Keywords

references

FULL TEXT LINK

浏览量

Downloads

文章被引用时，请邮件提醒。

Submit

工具集

关联资源

Effect of electrically aligned polycrystalline diamond flakes on the through-plane thermal conductivity of heat conduction sheets

The 4-inch free-standing diamond film prepared by MPCVD at 10kW

Study of horizontal and vertical uniformity of B-doped layer on mosaic single crystal diamond wafers by using hot-filament chemical vapor deposition