High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric

Ma Yuanchen; Ren Zeyang; Yang Shiqi; Su Kai; Zhang Jinfeng; Yang Xiaoli; Ning Xiuxiu; Zhang Jincheng; Hao Yue

doi:10.1080/26941112.2023.2219687

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High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric

Research Article | Updated：2023-06-13

- High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric
- High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric
- Functional Diamond 2023年3卷第1期
- Affiliations：
  
  1. a State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University
  2. a State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University Xi’an China
  3. b Xidian-Wuhu Research Institute
  4. c SICC CO. Ltd
- Author bio：
- Funds：
- DOI：10.1080/26941112.2023.2219687
  中图分类号：
- 网络首发：2023-06-13，
  
  纸质出版：2023
- Accepted：
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Ma Yuanchen, Ren Zeyang, Yang Shiqi, 等. High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric[J]. Functional Diamond, 2023,3(1).

Ma Yuanchen, Ren Zeyang, Yang Shiqi, et al. High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric[J]. Functional Diamond2023, 3(1).
Ma Yuanchen, Ren Zeyang, Yang Shiqi, 等. High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric[J]. Functional Diamond, 2023,3(1). DOI： 10.1080/26941112.2023.2219687.

Ma Yuanchen, Ren Zeyang, Yang Shiqi, et al. High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric[J]. Functional Diamond2023, 3(1). DOI： 10.1080/26941112.2023.2219687.

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Isberg J, Hammersberg J, Johansson E, et al. High carrier mobility in single-crystal plasma-deposited diamond. Science. 2002;297(5587):1–6. [Web of Science ®], [Google Scholar]

Achard J, Silva F, Tallaire A, et al. High quality MPACVD diamond single crystal growth: high microwave power density regime. J Phys D: Appl Phys. 2007;40(20):6175–6188. [Web of Science ®], [Google Scholar]

Geis MW, Smith HI, Argoitia A, et al. Large‐area mosaic diamond films approaching single‐crystal quality. Appl Phys Lett. 1991;58(22):2485–2487. [Web of Science ®], [Google Scholar]

Tallaire A, Achard J, Silva F, et al. Growth of large size diamond single crystals by plasma assisted chemical vapour deposition: recent achievements and remaining challenges. CR Phys. 2013;14(2–3):169–184. [Web of Science ®], [Google Scholar]

Kato T, Miyake T, Tashima D, et al. Maximum output power control using short-circuit current and open-circuit voltage of a solar panel. Jpn J Appl Phys. 2012;51(10S):10NF08. [Google Scholar]

Takeuchi D, Riedel M, Ristein J, et al. Surface band bending and surface conductivity of hydrogenated diamond. Phys Rev B. 2003;68(4):41304. [Google Scholar]

Kasu M, Ueda K, Ye H, et al. 2 W∕mm output power density at 1 GHz for diamond FETs. Electron Lett. 2005;41(22):1249–1250. [Web of Science ®], [Google Scholar]

Kasu M, Ueda K, Ye H, et al. High RF output power for H-terminated diamond FETs. Diamond Relat Mater. 2006;15(4–8):783–786. [Web of Science ®], [Google Scholar]

Hirama K, Sato H, Harada Y, et al. Thermally stable operation of H-Terminated diamond FETs by NO2 adsorption and Al2O3 passivation. IEEE Electron Device Lett. 2012;33(8):1111–1113. [Web of Science ®], [Google Scholar]

Kawarada H, Tsuboi H, Naruo T, et al. C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation. Appl Phys Lett. 2014;105(1):013510. [Google Scholar]

Hirama K, Sato H, Harada Y, et al. Epitaxial growth of AlGaN/GaN high-electron mobility transistor structure on diamond (111) surface. Jpn J Appl Phys. 2012;51(9R):090114. [Google Scholar]

Liu JW, Liao MY, Imura M, et al. Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors. J Appl Phys. 2013;114(8):084108. [Web of Science ®], [Google Scholar]

Wang Y-F, Chang X, Zhang X, et al. Normally-off hydrogen-terminated diamond field-effect transistor with Al2O3 dielectric layer formed by thermal oxidation of Al. Diamond Relat Mater. 2018;81:113–117. [Web of Science ®], [Google Scholar]

Ren Z, Lv D, Xu J, et al. High temperature (300°C) ALD grown Al2O3 on hydrogen terminated diamond: band offset and electrical properties of the MOSFETs. Appl Phys Lett. 2020;116(1):013503. [Web of Science ®], [Google Scholar]

Ren Z, Zhang J, Zhang J, et al. Diamond field effect transistors with MoO3 gate dielectric. IEEE Electron Device Lett. 2017;38(6):786–789. [Web of Science ®], [Google Scholar]

Ren Z, Zhang J, Zhang J, et al. Polycrystalline diamond RF MOSFET with MoO3 gate dielectric. AIP Adv. 2017;7(12):125302. [Web of Science ®], [Google Scholar]

Vardi A, Tordjman M, del Alamo JA, et al. A diamond: h/MoO3 MOSFET. IEEE Electron Device Lett. 2014;35(12):1320–1322. [Web of Science ®], [Google Scholar]

Liu JW, Liao MY, Imura M, et al. Normally-off HfO2 -gated diamond field effect transistors. Appl. Phys. Lett. 2013;103(9):092905. [Web of Science ®], [Google Scholar]

Verona C, Ciccognani W, Colangeli S, et al. V2O5 MISFETs on H-terminated diamond. IEEE Trans Electron Devices. 2016;63(12):4647–4653. [Web of Science ®], [Google Scholar]

Tordjman M, Weinfeld K, Kalish R. Boosting surface charge-transfer doping efficiency and robustness of diamond with WO3 and ReO3. Appl Phys Lett. 2017;111(11):111601. [Web of Science ®], [Google Scholar]

Liu JW, Oosato H, Liao MY, et al. Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator. Appl Phys Lett. 2017;110(20):203502. [Web of Science ®], [Google Scholar]

Kitabayashi Y, Kudo T, Tsuboi H, et al. Normally-Off C–H diamond MOSFETs with partial C–O channel achieving 2-kV breakdown voltage. IEEE Electron Device Lett. 2017;38(3):363–366. [Web of Science ®], [Google Scholar]

Yu X, Zhou J, Qi C, et al. A high frequency hydrogen-terminated diamond MISFET with fT/fmax of 70/80 GHz. IEEE Electron Device Lett. 2018;39(9):1373–1376. [Web of Science ®], [Google Scholar]

Ueda K, Kasu M, Yamauchi Y, et al. Diamond FET using high-quality polycrystalline diamond with fT/ of 45 GHz and fmax of 120 GHz. IEEE Electron Device Lett. 2006;27(7):570–572. [Web of Science ®], [Google Scholar]

Yu C, Zhou CJ, Guo JC, et al. Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density. Funct Diamond. 2022;2(1):64–70. [Google Scholar]

Imanishi S, Kudara K, Ishiwata H, et al. Drain Current Density Over 1.1 A/mm in 2D Hole Gas Diamond MOSFETs With Regrown p++-Diamond Ohmic Contacts. IEEE Electron Device Lett. 2021;42(2):204–207. [Web of Science ®], [Google Scholar]

Daicho A, Saito T, Kurihara S, et al. High-reliability passivation of hydrogen-terminated diamond surface by atomic layer deposition of Al2O3. J Appl Phys. 2014;115(22):223711. [Google Scholar]

Kawarada H, Yamada T, Xu D, et al. 28th ISPSD, Prague, Czech Republic, 2016. p. 483. [Google Scholar]

Ren Z, Yuan G, Zhang J, et al. Hydrogen-terminated polycrystalline diamond MOSFETs with Al2O3 passivation layers grown by atomic layer deposition at different temperatures. AIP Adv. 2018;8(6):065026. [Web of Science ®], [Google Scholar]

Ren Z, He Q, Xu J, et al. Low on-resistance H-diamond MOSFETs with 300°C ALD-Al2O3 gate dielectric. IEEE Access. 2020;8:50465–50471. [Web of Science ®], [Google Scholar]

Ren Z, Ma Y, Yang S, et al. High frequency single crystalline diamond MOSFET with high temperature (300 ◦ C) ALD grown Al2O3 dielectric. Funct Diamond. 2023;49:106517. [Google Scholar]

Imanishi S, Horikawa K, Oi N, et al. 3.8 W/mm RF power density for ALD Al2O3-based Two-Dimensional hole gas diamond MOSFET operating at saturation velocity. IEEE Electron Device Lett. 2019;40(2):279–282. [Web of Science ®], [Google Scholar]

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