Room-temperature bonding of GaN and diamond via a SiC layer

Ayaka Kobayashi; Hazuki Tomiyama; Yutaka Ohno; Yasuo Shimizu; Yasuyoshi Nagai; Naoteru Shigekawa; Jianbo Liang

doi:10.1080/26941112.2022.2145508

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Room-temperature bonding of GaN and diamond via a SiC layer

Research Article | Updated：2022-12-01

- Room-temperature bonding of GaN and diamond via a SiC layer
- Room-temperature bonding of GaN and diamond via a SiC layer
- Functional Diamond 2022年2卷第1期页码：142-150
- Affiliations：
  
  1. a Department of Engineering Osaka City University
  2. b Institute for Materials Research (IMR) Tohoku University Oarai
  3. a Department of Engineering Osaka City University Osaka Japan
  4. c Department of Physical Electronics Osaka Metropolitan University
- Author bio：
- Funds：
- DOI：10.1080/26941112.2022.2145508
  中图分类号：
- 网络首发：2022-12-01，
  
  纸质出版：2022
- Accepted：
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Ayaka Kobayashi, Hazuki Tomiyama, Yutaka Ohno, 等. Room-temperature bonding of GaN and diamond via a SiC layer[J]. Functional Diamond, 2022,2(1):142-150.

Ayaka Kobayashi, Hazuki Tomiyama, Yutaka Ohno, et al. Room-temperature bonding of GaN and diamond via a SiC layer[J]. Functional Diamond2022, 2(1): 142-150.
Ayaka Kobayashi, Hazuki Tomiyama, Yutaka Ohno, 等. Room-temperature bonding of GaN and diamond via a SiC layer[J]. Functional Diamond, 2022,2(1):142-150. DOI： 10.1080/26941112.2022.2145508.

Ayaka Kobayashi, Hazuki Tomiyama, Yutaka Ohno, et al. Room-temperature bonding of GaN and diamond via a SiC layer[J]. Functional Diamond2022, 2(1): 142-150. DOI： 10.1080/26941112.2022.2145508.

摘要

Abstract

GaN-on-diamond structure is the most promising candidate for improving the heat dissipation efficiency of GaN-based power devices. Room-temperature bonding of GaN and diamond is an efficient technique for fabricating this structure. However

it is extremely difficult to polish diamond to an average roughness (Ra) below 0.4 nm

especially for polycrystalline diamond. In this work

Room-temperature bonding of GaN and rough-surfaced diamond with a SiC layer was successfully achieved by a surface-activated bonding (SAB) method. The diamond surface’s initial Ra value was 0.768 nm

but after deposition of the SiC layer

the Ra decreased to 0.365 nm. The SiC layer formed at the as-bonded GaN/diamond interface was amorphous

with a thickness of about 7 nm. After annealing at 1000-°C

the amorphous SiC layer became polycrystalline

and its thickness increased to approximately 12 nm. These results indicate that the deposition of a SiC layer on diamond can efficiently lower the diamond surface’s roughness and thus facilitate room-temperature bonding.

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references

Wu Y, Saxler A, Moore M, et al. 30-W/mm GaN HEMTs by field plate optimization. IEEE Electron Device Lett. 2004;25(3):117–119. Web of Science ®Google Scholar

Ohki T, Yamada A, Minoura Y, et al. An over 20-W/mm S-band InAlGaN/GaN HEMT with SiC/diamond-bonded heat spreader. IEEE Electron Device Lett. 2019;40(2):287–290. Web of Science ®Google Scholar

Tadjer M, Anderson T, Ancona M, et al. GaN-on-Diamond HEMT technology with T AVG= 176° C at P DC, max= 56 W/mm measured by transient thermoreflectance imaging. IEEE Electron Device Lett. 2019;40(6):881–884. Web of Science ®Google Scholar

Sun H, Pomeroy J, Simon R, et al. Temperature-dependent thermal resistance of GaN-on-Diamond HEMT wafers. IEEE Electron Device Lett. 2016;37(5):621–624. Web of Science ®Google Scholar

Anaya J, Bai T, Wang Y, et al. Simultaneous determination of the lattice thermal conductivity and grain/grain thermal resistance in polycrystalline diamond. Acta Mater. 2017;139:215–225. Web of Science ®Google Scholar

Cheng Z, Bai T, Shi J, et al. Tunable thermal energy transport across diamond membranes and diamond-Si interfaces by nanoscale graphoepitaxy. ACS Appl Mater Interfaces. 2019;11(20):18517–18527. PubMed Web of Science ®Google Scholar

Liu T, Kong Y, Wu L, et al. 3-inch GaN-on-Diamond HEMTs with device-first transfer technology. IEEE Electron Device Lett. 2017;38(10):1417–1420. Web of Science ®Google Scholar

Cho J, Li Z, Bozorg-Grayeli E, et al. Improved thermal interfaces of GaN-Diamond composite substrates for HEMT applications. IEEE Trans Compon Packag Manuf Technol. 2013;3(1):79–85. Web of Science ®Google Scholar

Chao P, Chu K, Creamer C, et al. Low-temperature bonded GaN-on-Diamond HEMTs with 11 W/mm output power at 10 GHz. IEEE Trans Electron Devices. 2015;62(11):3658–3664. Web of Science ®Google Scholar

Zhou Y, Anaya J, Pomeroy J, et al. Barrier-layer optimization for enhanced GaN-on-Diamond device cooling. ACS Appl Mater Interfaces. 2017;9(39):34416–34422. PubMed Web of Science ®Google Scholar

Hirama K, Taniyasu Y, Kasu M. AlGaN/GaN high-electron mobility transistor with low thermal resistance grown on single-crystal diamond (111) substrates by metalorgranic vapor-phase epitaxy. Appl Phys Lett 2011;98(16):162112. Web of Science ®Google Scholar

Sun H, Simon R, Pomeroy J, et al. Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications. Appl Phys Lett. 2015;106(11):111906. Web of Science ®Google Scholar

Kuzmik J, Bychikhin S, Pogany D, et al. Thermal characteristics of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond. J Appl Phys. 2011;109(8):086106. Web of Science ®Google Scholar

Siddique A, Ahmed R, Anderson J, et al. Structure and interface analysis of diamond on an AlGaN/GaN HEMT utilizing an in situ SiNx interlayer grown by MOCVD. ACS Appl Electron Mater. 2019;1(8):1387–1399. Google Scholar

Mandal S, Cuenca J, Massabuau F, et al. Thick, adherent diamond films on AlN with low thermal barrier resistance. ACS Appl Mater Interfaces. 2019;11(43):40826–40834. PubMed Web of Science ®Google Scholar

Cheng Z, Mu F, Yates L, et al. Interfacial thermal conductance across room-temperature-bonded GaN/diamond interfaces for GaN-on-Diamond devices. ACS Appl Mater Interfaces. 2020;12(7):8376–8384. PubMed Web of Science ®Google Scholar

Kim J, Lee J, Kim J, et al. Challenging endeavor to integrate gallium and carbon via direct bonding to evolve GaN on diamond architecture. Scr Mater. 2018;142:138–142. Web of Science ®Google Scholar

Wang K, Ruan K, Hu W, et al. Room temperature bonding of GaN on diamond wafers by using Mo/Au nano-layer for high-power semiconductor devices. Scr Mater. 2020;174:87–90. Web of Science ®Google Scholar

Francis D, Faili F, Babic D, et al. Formation and characterization of 4-inch GaN-on-diamond substrate. Diam Relat Mater. 2010;19(2-3):229–233. Web of Science ®Google Scholar

Liang J, Masuya S, Kasu M, et al. Realization of direct bonding of single crystal diamond and Si substrates. Appl Phys Lett. 2017;110(11):111603. Web of Science ®Google Scholar

Matsumae T, Kurashima Y, Umezawa H, et al. Low-temperature direct bonding of β-Ga2O3 and diamond substrates under atmospheric conditions. Appl Phys Lett. 2020;116(14):141602. Web of Science ®Google Scholar

Liang J, Nakamura Y, Zhan T, et al. Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications. Diam Relat Mater. 2021;111:108207. Web of Science ®Google Scholar

Liang J, Nakamura Y, Ohno Y, et al. Room temperature direct bonding of diamond and InGaP in atmospheric air. Funct Diam. 2021;1(1):110–116. Google Scholar

Liang J, Kobayashi A, Shimizu Y, et al. Fabrication of GaN/diamond heterointerface and interfacial chemical bonding state for highly efficient device design. Adv Mater. 2021;33(43):2104564. Web of Science ®Google Scholar

Matsumae T, Kurashima Y, Umezawa H, et al. Hydrophilic low-temperature direct bonding of diamond and Si substrates under atmospheric conditions. Scr. Mater. 2020;175:24–28. Web of Science ®Google Scholar

Liang J, Ohno Y, Yamashita Y, et al. Characterization of nanoscopic Cu/diamond interfaces prepared by surface-activated bonding: implications for thermal management. ACS Appl Nano Mater. 2020;3(3):2455–2462. Web of Science ®Google Scholar

Matsumae T, Kurashima Y, Umezawa H, et al. Hydrophilic direct bonding of diamond (111) substrate using treatment with H2SO4/H2O2. Jpn J Appl Phys. 2020;59(SB):SBBA01. Google Scholar

Ohno Y, Liang J, Shigekawa N, et al. Chemical bonding at room temperature via surface activation to fabricate low-resistance GaAs/Si heterointerfaces. Appl Surf Sci. 2020;525:146610. Web of Science ®Google Scholar

Sun R, Yang X, Ohkubo Y, et al. Optimization of gas composition used in plasma chemical vaporization machining for figuring of reaction-sintered silicon carbide with low surface roughness. Sci Rep. 2018;8(1):2376. PubMedGoogle Scholar

Liang J, Masuya S, Kim S, et al. Stability of diamond/Si bonding interface during device fabrication process. Appl Phys Express. 2019;12(1):016501. Web of Science ®Google Scholar

Michel K, Olivier T, Guy F, et al. Evolution and prevention of meltback etching: Case study of semipolar gan growth on patterned silicon substrates. J. Appl. Phys. 2017;122:105108. Web of Science ®Google Scholar

Mu F, Cheng Z, Shi J, et al. High thermal boundary conductance across bonded heterogenous GaN-SiC interfaces. ACS Appl Mater Interfaces. 2019;(11):33428–33434. PubMedGoogle Scholar

Wang H, Xu Y, Shimono M, et al. Computation of interfacial thermal resistance by phonon diffuse mismatch model. Mater Trans. 2007;48(9):2349–2352. doi:10.2320/matertrans.MAW200717. Web of Science ®Google Scholar

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