Designing of room temperature diluted ferromagnetic Fe doped diamond semiconductor

Tianwei Li; Jianxin Hao; Wei Cao; Tingting Jia; Zhenxiang Cheng; Qiuming Fu; Hongyang Zhao; Zhibin Ma

doi:10.1080/26941112.2022.2098065

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Designing of room temperature diluted ferromagnetic Fe doped diamond semiconductor

Research Article | Updated：2022-07-14

- Designing of room temperature diluted ferromagnetic Fe doped diamond semiconductor
- Designing of room temperature diluted ferromagnetic Fe doped diamond semiconductor
- Functional Diamond 2022年2卷第1期页码：80-83
- Affiliations：
  
  1. a Hubei Key Laboratory of Plasma Chemistry and Advanced Materials Wuhan Institute of Technology
  2. b Shenzhen Institute of Advanced Technology Chinese Academy of Sciences
  3. c Institute for Superconducting & Electronic Materials University of Wollongong Wollongong
- Author bio：
- Funds：
- DOI：10.1080/26941112.2022.2098065
  中图分类号：
- 网络首发：2022-07-14，
  
  纸质出版：2022
- Accepted：
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Tianwei Li, Jianxin Hao, Wei Cao, 等. Designing of room temperature diluted ferromagnetic Fe doped diamond semiconductor[J]. Functional Diamond, 2022,2(1):80-83.

Tianwei Li, Jianxin Hao, Wei Cao, et al. Designing of room temperature diluted ferromagnetic Fe doped diamond semiconductor[J]. Functional Diamond2022, 2(1): 80-83.
Tianwei Li, Jianxin Hao, Wei Cao, 等. Designing of room temperature diluted ferromagnetic Fe doped diamond semiconductor[J]. Functional Diamond, 2022,2(1):80-83. DOI： 10.1080/26941112.2022.2098065.

Tianwei Li, Jianxin Hao, Wei Cao, et al. Designing of room temperature diluted ferromagnetic Fe doped diamond semiconductor[J]. Functional Diamond2022, 2(1): 80-83. DOI： 10.1080/26941112.2022.2098065.

摘要

Abstract

Semiconductor devices generally take advantage of the charge of electrons

whereas magnetic materials are used for recording information involving electron spin. To make use of both charge and spin of electrons in semiconductors

a high concentration of magnetic elements can be introduced in nonmagnetic III-V semiconductors to make magnetic semiconductor. In this work

Fe-Diamond was obtained with low solubility by modified microwave plasma chemical vapor deposition technique. Magnetic measurements revealed that the magnetic transition temperature from paramagnetic to ferromagnetic-like is above room temperature. The bandgap of Fe-Diamond is calculated to be 1.65 eV

which indicates that Fe-Diamond is a room temperature diluted ferromagnetic semiconductor.

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references

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