Study of horizontal and vertical uniformity of B-doped layer on mosaic single crystal diamond wafers by using hot-filament chemical vapor deposition

Hideaki Yamada; Takehiro Shimaoka

doi:10.1080/26941112.2022.2068972

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Study of horizontal and vertical uniformity of B-doped layer on mosaic single crystal diamond wafers by using hot-filament chemical vapor deposition

Research Article | Updated：2022-05-05

- Study of horizontal and vertical uniformity of B-doped layer on mosaic single crystal diamond wafers by using hot-filament chemical vapor deposition
- Study of horizontal and vertical uniformity of B-doped layer on mosaic single crystal diamond wafers by using hot-filament chemical vapor deposition
- Functional Diamond 2022年2卷第1期页码：46-52
- Affiliations：
  
  Diamond Wafer Team Advanced Power Electronics Research Center National Institute of Advanced Industrial Science and Technology (AIST) Ikeda
- Author bio：
- Funds：
- DOI：10.1080/26941112.2022.2068972
  中图分类号：
- 网络首发：2022-05-05，
  
  纸质出版：2022
- Accepted：
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Hideaki Yamada, Takehiro Shimaoka. Study of horizontal and vertical uniformity of B-doped layer on mosaic single crystal diamond wafers by using hot-filament chemical vapor deposition[J]. Functional Diamond, 2022,2(1):46-52.

Hideaki Yamada, Takehiro Shimaoka. Study of horizontal and vertical uniformity of B-doped layer on mosaic single crystal diamond wafers by using hot-filament chemical vapor deposition[J]. Functional Diamond2022, 2(1): 46-52.
Hideaki Yamada, Takehiro Shimaoka. Study of horizontal and vertical uniformity of B-doped layer on mosaic single crystal diamond wafers by using hot-filament chemical vapor deposition[J]. Functional Diamond, 2022,2(1):46-52. DOI： 10.1080/26941112.2022.2068972.

Hideaki Yamada, Takehiro Shimaoka. Study of horizontal and vertical uniformity of B-doped layer on mosaic single crystal diamond wafers by using hot-filament chemical vapor deposition[J]. Functional Diamond2022, 2(1): 46-52. DOI： 10.1080/26941112.2022.2068972.

摘要

Abstract

iming at developing inch-sized processing of diamond

B-doped layer was grown on mosaic single-crystallin diamond wafers by using hot-filament chemical vapor deposition (CVD)

which is expected to have an advantage in terms of the deposition area compared with microwave plasma (MWP) CVD. Uniformity in horizontal and vertical directions is studied. It is found that the junctions of the monocrystalline diamond domains in the mosaic wafer and the direction of the crystal off-angles against to these junctions are less effective to the uniformity of the impurity concentrations. On the other hand

it is suggested that excess incorporation of W from the filament suppresses the growth and incorporation of B. It is shown that millimeter scale or more precise control of the arrangement of the wafer and the filament enables to obtain more uniform and efficient doping.

关键词

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references

Doping and semiconductor characterizations. In: Koizumi S, Pernot J, Umezawa H, Suzuki M, editors. Power electronics device applications of diamond semiconductors. Sawston: Woodhead Publishing; 2018. pp. 99–189. Google Scholar

Donato N, Rouger N, Pernot J, et al. Diamond power devices: state of the art, modelling, figures of merit and future perspective. J Phys D Appl Phys. 2020;53(9):093001. Web of Science ®Google Scholar

Achard J, Jacques V, Tallaire A. Chemical vapour deposition diamond single crystals with nitrogen-vacancy centres: a review of material synthesis and technology for quantum sensing applications. J Phys D Appl Phys. 2020;53(31):313001. Web of Science ®Google Scholar

Zheng Y, Li C, Liu J, et al. Chemical vapor deposited diamond with versatile grades: from gemstone to quantum electronics. Front Mater Sci. 2022;16(1):220590. Web of Science ®Google Scholar

Sumiya H, Tamasaku K. Large defect-free synthetic type IIa diamond crystals synthesized via high pressure and high temperature. Jpn J Appl Phys. 2012;51:090102. Web of Science ®Google Scholar

Tsao JY, Chowdhury S, Hollis MA, et al. Ultrawide‐bandgap semiconductors: research opportunities and challenges. Adv Electron Mater. 2018;4(1):1600501. Web of Science ®Google Scholar

Schreck M, Gsell S, Brescia R, et al. Ion bombardment induced buried lateral growth: the key mechanism for the synthesis of single crystal diamond wafers. Sci Rep. 2017;7:44462. PubMed Web of Science ®Google Scholar

Kim SW, Takaya R, Hirano S, et al. Two-inch high-quality (001) diamond heteroepitaxial growth on sapphire (1120) misoriented substrate by step-flow mode. Appl Phys Express. 2021;14(11):115501. Web of Science ®Google Scholar

Yamada H, Chayahara A, Mokuno Y, et al. A 2-in. mosaic wafer made of a single-crystal diamond. Appl Phys Lett. 2014;104(10):102110. Web of Science ®Google Scholar

Seki Y, Hoshino Y, Nakata J. Extremely high-efficient activation of acceptor boron introduced by ion implantation at room temperature with various doping concentrations in epitaxially synthesized diamond films by chemical vapor deposition. J Appl Phys. 2021;129(19):195702. Web of Science ®Google Scholar

Haruyama M, Onoda S, Higuchi T, et al. Triple nitrogen-vacancy Centre fabrication by C5N4Hn ion implantation. Nat Commun. 2019;10(1):2664. PubMedGoogle Scholar

Ohmagari S, Yamada H, Tsubouchi N, et al. Schottky barrier diodes fabricated on diamond mosaic wafers: dislocation reduction to mitigate the effect of coalescence boundaries. Appl Phys Lett. 2019;114(8):082104. Web of Science ®Google Scholar

Ohmagari S, Ogura M, Umezawa H, et al. Lifetime and migration length of B-related admolecules on diamond {1 0 0}-surface: comparative study of hot-filament and microwave plasma-enhanced chemical vapor deposition. J Crystal Growth. 2017;479:52–58. Web of Science ®Google Scholar

Ohmagari S, Srimongkon K, Yamada H, et al. Low resistivity p + diamond (100) films fabricated by hot-filament chemical vapor deposition. Diamond Relat Mater. 2015;58:110–114. Web of Science ®Google Scholar

Tokuda N, Umezawa H, Saito T, et al. Surface roughening of diamond (001) films during homoepitaxial growth in heavy boron doping. Diamond Relat Mater. 2007;16(4–7):767–770. Web of Science ®Google Scholar

Schäfer L, Höfer M, Kröger R. The versatility of hot-filament activated chemical vapor deposition. Thin Solid Films. 2006;515(3):1017–1024. Web of Science ®Google Scholar

Auciello O. Science and technology of a transformational multifunctional ultrananocrystalline diamond (UNCDTM) coating. Funct Diamond. 2022;2(1):1–24. Google Scholar

Takamori Y, Nagai M, Tabakoya T, et al. Insight into temperature impact of ta filaments on high-growth-rate diamond (100) films by hot-filament chemical vapor deposition. Diamond Relat Mater. 2021;118:108515. Web of Science ®Google Scholar

Tabakoya T, Kanada S, Wakui Y, et al. High‐rate growth of single‐crystalline diamond (100) films by hot‐filament chemical vapor deposition with tantalum filaments at 3000 °C. Phys Status Solidi A. 2019;216(21):1900244. Web of Science ®Google Scholar

Wu Y, Zhang H, Yan G, et al. Hot filament chemical vapor deposition temperature field optimization for diamond films deposited on silicon nitride substrates. Mater Res Express. 2021;8(11):116403. Web of Science ®Google Scholar

Alcantar-Peña JJ, Montes J, Arellano-Jimenez MJ, et al. Low temperature hot filament chemical vapor deposition of ultrananocrystalline diamond films with tunable sheet resistance for electronic power devices. Diamond Relat Mater. 2016;69:207–213. Web of Science ®Google Scholar

Zhang T, Qian Y, Wang S, et al. Influence of the heat dissipation mode of long-flute cutting tools on temperature distribution during HFCVD diamond films. Crystals. 2019;9:394. Google Scholar

Yamada H, Chayahara A, Umezawa H, et al. Fabrication and fundamental characterizations of tiled clones of single-crystal diamond with 1-inch size. Diamond Relat Mater. 2012;24:29–33. Web of Science ®Google Scholar

Katamune Y, Mori D, Arikawa D, et al. n-Type doping of diamond by hot-filament chemical vapor deposition growth with phosphorus incorporation. Appl Phys A. 2020;126(11):879. Web of Science ®Google Scholar

Yamada H. Numerical simulations to study growth of Single-Crystal diamond by using microwave plasma chemical vapor deposition with reactive (H, C, N) species. Jpn J Appl Phys. 2012;51:090105. Web of Science ®Google Scholar

Bustarret E, Gheeraert E, Watanabe K. Optical and electronic properties of heavily boron-doped homo-epitaxial diamond. Phys Stat Sol (a). 2003;199(1):9–18. Web of Science ®Google Scholar

Issaoui R, Tallaire A, Mrad A, et al. Defect and threading dislocations in single crystal diamond: a focus on boron and nitrogen codoping. Phys Status Solidi A. 2019;216(21):1900581. Web of Science ®Google Scholar

Yamada H, Chayahara A, Ohmagari S, et al. Factors to control uniformity of single crystal diamond growth by using microwave plasma CVD. Diamond Relat Mater. 2016;63:17–20. Web of Science ®Google Scholar

Yamada H, Chayahara A, Ohmagari S, et al. Effect of Ar addition on uniformity of diamond growth by using microwave plasma chemical vapor deposition. Diamond Relat Mater. 2018;87:143–148. Web of Science ®Google Scholar

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