Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices

Liwen Sang

doi:10.1080/26941112.2021.1980356

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Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices

Articles | Updated：2021-10-15

- Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices
- Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices
- Functional Diamond 2021年1卷第1期页码：174-188
- Affiliations：
  
  1. a International Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) Tsukuba Ibaraki Japan
  2. b JST-PRESTO The Japan Science and Technology Agency
- Author bio：
- Funds：
- DOI：10.1080/26941112.2021.1980356
  中图分类号：
- 网络首发：2021-10-15，
  
  纸质出版：2021
- Accepted：
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Liwen Sang. Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices[J]. Functional Diamond, 2021,1(1):174-188.

Liwen Sang. Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices[J]. Functional Diamond2021, 1(1): 174-188.
Liwen Sang. Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices[J]. Functional Diamond, 2021,1(1):174-188. DOI： 10.1080/26941112.2021.1980356.

Liwen Sang. Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices[J]. Functional Diamond2021, 1(1): 174-188. DOI： 10.1080/26941112.2021.1980356.

摘要

Abstract

With the increasing power density and reduced size of the GaN-based electronic power converters

the heat dissipation in the devices becomes the key issue toward the real applications. Diamond

with the highest thermal conductivity among all the natural materials

is of the interest for integration with GaN to dissipate the generated heat from the channel of the AlGaN/GaN high electron mobility transistors (HEMTs). Current techniques involve three strategies to fabricate the GaN-on-diamond wafers: bonding of GaN with diamond

epitaxial growth of diamond on GaN

and epitaxial growth of GaN on diamond. As a result of the large lattice mismatch and thermal mismatch

the integration of GaN-on-diamond wafer is suffered from stress

bow

crack

rough interfaces

and large thermal boundary resistance. The interfaces with transition or buffer layers impede the heat flow from the device channel and greatly influence the device performance. In this review

we summarize the three different techniques to achieve the GaN-on-diamond wafers for the fabrication of AlGaN/GaN HEMTs. The problems and challenges of each method are discussed. In addition

the effective thermal boundary resistance between GaN and diamond

which characterizes the heat concentration

is analyzed with regard to different integration and measurement methods.

关键词

Keywords

references

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