Epitaxial lateral growth of single-crystal diamond under high pressure by a plate-to-plate MPCVD

Wei Cao; Deng Gao; Hongyang Zhao; Zhibin Ma

doi:10.1080/26941112.2021.1947750

Your Location：

Home >

Browse articles >

Epitaxial lateral growth of single-crystal diamond under high pressure by a plate-to-plate MPCVD

Articles | Updated：2021-07-30

- Epitaxial lateral growth of single-crystal diamond under high pressure by a plate-to-plate MPCVD
- Epitaxial lateral growth of single-crystal diamond under high pressure by a plate-to-plate MPCVD
- Functional Diamond 2021年1卷第1期页码：143-149
- Affiliations：
  
  Department of Material Science and Engineering Hubei Key Laboratory of Plasma Chemistry & Advanced Materials Wuhan Institute of Technology
- Author bio：
- Funds：
- DOI：10.1080/26941112.2021.1947750
  中图分类号：
- 网络首发：2021-07-30，
  
  纸质出版：2021
- Accepted：
Scan QR Code
Wei Cao, Deng Gao, Hongyang Zhao, 等. Epitaxial lateral growth of single-crystal diamond under high pressure by a plate-to-plate MPCVD[J]. Functional Diamond, 2021,1(1):143-149.

Wei Cao, Deng Gao, Hongyang Zhao, et al. Epitaxial lateral growth of single-crystal diamond under high pressure by a plate-to-plate MPCVD[J]. Functional Diamond2021, 1(1): 143-149.
Wei Cao, Deng Gao, Hongyang Zhao, 等. Epitaxial lateral growth of single-crystal diamond under high pressure by a plate-to-plate MPCVD[J]. Functional Diamond, 2021,1(1):143-149. DOI： 10.1080/26941112.2021.1947750.

Wei Cao, Deng Gao, Hongyang Zhao, et al. Epitaxial lateral growth of single-crystal diamond under high pressure by a plate-to-plate MPCVD[J]. Functional Diamond2021, 1(1): 143-149. DOI： 10.1080/26941112.2021.1947750.

摘要

Abstract

The epitaxial lateral growth of single-crystal diamond (SCD) using a plate-to-plate microwave plasma chemical vapor deposition (MPCVD) reactor under high pressure is investigated. The radicals’ distribution in H

/CH

plasma as a function of pressure was locally detected by optical emission spectroscopy (OES). Raman spectroscopy and optical microscope were employed to analyze the properties of SCD deposited in different pressure. The OES results show that radicals’ distribution along the substrate direction is symmetrical under 20 kPa pressure. The symmetrical distribution of radicals at 20 kPa is in favor of epitaxial lateral growth SCD around the seed and without polycrystalline diamond (PCD) rim. When the pressure is increased to 21.5 kPa

the optical emission spectra center of plasma shifts close to the microwave reflector where is far away from the microwave source. The contact state between the diamond seed and the plasma is deteriorated and the PCD rim occurs in the plasma uncovered area. While the epitaxial lateral growth pattern occurs in the plasma covered area and the lateral growth rate of this region improves with the increase of pre

ssure. A higher growth rate does not result in good quality; meanwhile

the diamond growth step spacing and direction become inconsistent in the transition zone as a function of pressure increasing. Finally

the overall effective lateral expansion area does not increase with the improvement of pressure. Therefore

the uniform and symmetrical distributed plasma is more conducive to the epitaxial lateral growth of SCD

and the effective expansion growth SCD can be realized at 20 kPa.

关键词

Keywords

references

Aharonovich I, Lee JC, Magyar AP, et al. Homoepitaxial growth of single crystal diamond membranes for quantum information processing. Adv Mater. 2012;24(10):OP54–OP59. PubMed Web of Science ®Google Scholar

Wan NH, Lu T-J, Chen KC, et al. Large-scale integration of artificial atoms in hybrid photonic circuits. Nature. 2020;583(7815):226–231. PubMed Web of Science ®Google Scholar

Delfaure C, Pomorski M, de Sanoit J, et al. Single crystal CVD diamond membranes for betavoltaic cells. Appl Phys Lett. 2016;108(25):252105. Web of Science ®Google Scholar

Muehle M, Asmussen J, Becker MF, et al. Extending microwave plasma assisted CVD SCD growth to pressures of 400 Torr. Diamond Relat Mater. 2017;79:150–163. Web of Science ®Google Scholar

Zhibin M, Chao W, Wang J, et al. Development of a plate-to-plate MPCVD reactor configuration for diamond synthesis. Diamond Relat Mater. 2016;66:135–140. Web of Science ®Google Scholar

Lu J, Gu Y, Grotjohn TA, et al. Experimentally defining the safe and efficient, high pressure microwave plasma assisted CVD operating regime for single crystal diamond synthesis. Diamond Relat. Mater. 2013;37:17–28. Web of Science ®Google Scholar

Ichikawa K, Kurone K, Kodama H, et al. High crystalline quality heteroepitaxial diamond using grid-patterned nucleation and growth on Ir. Diamond Relat Mater. 2019;94:92–100. Web of Science ®Google Scholar

Schreck M, Mayr M, Weinl M, et al. Liftoff of single crystal diamond by epitaxial lateral overgrowth using SiO2 masks. Diamond Relat Mater. 2020;101:107606. Web of Science ®Google Scholar

Nad S, Gu Y. j, Asmussen J. Growth strategies for large and high quality single crystal diamond substrates. Diamond Relat Mater. 2015;60:26–34. Web of Science ®Google Scholar

Zhao Y, Guo Y, Lin L, et al. Comparison of the quality of single-crystal diamonds grown on two types of seed substrates by MPCVD. J Cryst Growth. 2018;491:89–96. Web of Science ®Google Scholar

Chatei H, Bougdira J, Rémy M, et al. Effect of nitrogen concentration on plasma reactivity and diamond growth in a H2-CH4-N2 microwave discharge. Diamond Relat Mater. 1997;6(1):107–119. Web of Science ®Google Scholar

Liao Y, Li CH, Ye ZY, et al. Analysis of optical emission spectroscopy in diamond chemical vapor deposition. Diamond Relat Mater. 2000;9(9/10):1716–1721. Web of Science ®Google Scholar

Sharma R, Woehrl N, Vrućinić M, et al. Effect of microwave power and C2 emission intensity on structural and surface properties of nanocrystalline diamond films. Thin Solid Films. 2011;519(22):7632–7637. Web of Science ®Google Scholar

Mankelevich YA, May P. W. New insights into the mechanism of CVD diamond growth: Single crystal diamond in MW PECVD reactors. Diamond Relat Mater. 2008;17(7–10):1021–1028. Web of Science ®Google Scholar

Liang Q, Chin CY, Lai J, et al. Enhanced growth of high quality single crystal diamond by microwave plasma assisted chemical vapor deposition at high gas pressures. Appl Phys Lett. 2009;94(2):024103. Web of Science ®Google Scholar

Hemawan KW, Hemley RJ. Optical emission diagnostics of plasmas in chemical vapor deposition of single-crystal diamond. J Vac Sci Technol A. 2015;33(6):061302. Web of Science ®Google Scholar

Bogdanov SA, Gorbachev AM, Vikharev AL, et al. Study of microwave discharge at high power density conditions in diamond chemical vapor deposition reactor by optical emission spectroscopy. Diamond Relat. Mater. 2019;97:107407. Web of Science ®Google Scholar

Mayr M, Fischer M, Klein O, et al. Interaction between surface structures and threading dislocations during epitaxial diamond growth. Phys Status Solidi A. 2015;212(11):2480–2486. Web of Science ®Google Scholar

Klein O, Mayr M, Fischer M, et al. Propagation and annihilation of threading dislocations during off-axis growth of heteroepitaxial diamond films. Diamond Relat Mater. 2016;65:53–58. Web of Science ®Google Scholar

Nad S, Charris A, Asmussen J. MPACVD growth of single crystalline diamond substrates with PCD rimless and expanding surfaces. Appl Phys Lett. 2016;109(16):162103. Web of Science ®Google Scholar

Tallaire A, Achard J, Brinza O, et al. Growth strategy for controlling dislocation densities and crystal morphologies of single crystal diamond by using pyramidal-shape substrates. Diamond Relat Mater. 2013;33:71–77. Web of Science ®Google Scholar

Brinza O, Achard J, Silva F, et al. Dependence of CVD diamond growth rate on substrate orientation as a function of process parameters in the high microwave power density regime. Phys Status Solidi A. 2008;205(9):2114–2120. Web of Science ®Google Scholar

Silva EL, Mishra YK, Fernandes AJS, et al. Direct Synthesis of Electrowettable Carbon Nanowall–Diamond Hybrid Materials from Sacrificial Ceramic Templates Using HFCVD. Adv Mater Interfaces. 2017;4(10):1700019. Web of Science ®Google Scholar

Ferrari AC, Robertson J. Origin of the 1150 cm−1 Raman mode in nanocrystalline diamond. Phys Rev B. 2001;63(12):121405. Web of Science ®Google Scholar

浏览量

Downloads

文章被引用时，请邮件提醒。

Submit

工具集

关联资源

Preparation of diamond on GaN using microwave plasma chemical vapor deposition with double-substrate structure