1. b Prokhorov General Physics Institute Russian Academy of Sciences
2. a National Key Laboratory of Science and Technology on Advanced Composites in Special Environments Harbin Institute of Technology
3. a National Key Laboratory of Science and Technology on Advanced Composites in Special Environments Harbin Institute of Technology Harbin P.R. China
4. c Ministry of Education Key Laboratory of Micro-systems and Micro-structures Manufacturing
网络首发:2021-02-19,
纸质出版:2021
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Guoyang Shu, Bing Dai, Andrey Bolshakov, 等. Coessential-connection by microwave plasma chemical vapor deposition: a common process towards wafer scale single crystal diamond[J]. Functional Diamond, 2021,1(1):47-62.
Guoyang Shu, Bing Dai, Andrey Bolshakov, et al. Coessential-connection by microwave plasma chemical vapor deposition: a common process towards wafer scale single crystal diamond[J]. Functional Diamond2021, 1(1): 47-62.
Guoyang Shu, Bing Dai, Andrey Bolshakov, 等. Coessential-connection by microwave plasma chemical vapor deposition: a common process towards wafer scale single crystal diamond[J]. Functional Diamond, 2021,1(1):47-62. DOI: 10.1080/26941112.2020.1869511.
Guoyang Shu, Bing Dai, Andrey Bolshakov, et al. Coessential-connection by microwave plasma chemical vapor deposition: a common process towards wafer scale single crystal diamond[J]. Functional Diamond2021, 1(1): 47-62. DOI: 10.1080/26941112.2020.1869511.
Large size single crystal diamond (SCD) wafer has been strongly desired for various of advanced applications
while two major potential approaches
including mosaic growth and heteroepitaxy based on chemical vapor deposition method
are both stuck with respective technical barriers. This paper reveals and summarizes the essential commonality of the two schemes
and denominates the concept of “coessential-connection” (CC) growth. Such generalized concept involved the nature of the single crystal and polycrystalline diamond film deposition with similar mechanism and processes. The principle of CC growth process with detailed classification was elaborated
and influence of nucleus size and orientation mismatch was clarified
which is regarded as the core problem of large area SCD film growth
via
coessential-connection process.
Fang J, He Z, Zhang Z, et al. Reliability improvement of diamond drill bits using design of experiments. Qual Eng. 2018; 30(2): 339–350. Web of Science ®Google Scholar
Wang XC, Shen B, Sun FH, et al. Deposition and application of CVD diamond films on the interior-hole surface of silicon carbide compacting dies. KEM. 2012; 499: 45–50. Google Scholar
Jayaraman A. Diamond anvil cell and high-pressure physical investigations. Rev Mod Phys. 1983; 55(1): 65–108. Web of Science ®Google Scholar
Inyushkin AV, Taldenkov AN, Ralchenko VG, et al. Thermal conductivity of high purity synthetic single crystal diamonds. Phys Rev B. 2018; 97(14): 144305. Web of Science ®Google Scholar
Graebner JE, Reiss ME, Seibles L, et al. Phonon scattering in chemical-vapor-deposited diamond. Phys Rev B. 1994; 50(6): 3702–3713. Web of Science ®Google Scholar
Simon RB, Anaya J, Faili F, et al. Effect of grain size of polycrystalline diamond on its heat spreading properties. Appl Phys Express. 2016; 9(6): 061302. Web of Science ®Google Scholar
Rossini FD, Jessup RS. Heat and free energy of formation of carbon dioxide, and of the transition between graphite and diamond. J Res Natl Bur Stan. 1938; 21(4): 491–513. Google Scholar
Palyanov YN, Kupriyanov IN, Khokhryakov AF, et al. Crystal growth of diamond. In: Handbook of crystal growth: bulk crystal growth. 2nd ed. New York (NY): Elsevier; 2015. p. 671–713. Google Scholar
Bundy FP, Hall HT, Strong HM, et al. Man-made diamonds. Nature. 1955; 176(4471): 51–55. Web of Science ®Google Scholar
Bovenkerk HP, Bundy FP, Strong HM, et al. Preparation of diamond. Nature. 1959; 184(4693): 1094–1098. Web of Science ®Google Scholar
Strong HM, Wentorf RH. The growth of large diamond crystals. Die Naturwissenschaften. 1972; 59(1): 1–7. Web of Science ®Google Scholar
Sumiya H, Satoh S, Nishibayashi Y. Development of high-purity synthetic diamonds. Sumitomo Electr Tech Rev. 1995; 39: 69–69. Google Scholar
Wang G. The birth of China’s first synthetic diamond (in Chinese). Superhard Mater Eng. 2008; 4: 45–47. Google Scholar
Shigley J, Moses T, Reinitz I, et al. Gemological properties of near-colorless synthetic diamonds. Gems Gemol. 2010; 46: 42–53. Google Scholar
Hainschwang T, Simic D, Fritsch E, et al. A gemological study of a collection of chameleon diamonds. Gems Gemol. 2005; 41(1): 20–35. Web of Science ®Google Scholar
D’Haenens-Johansson UFS, Moe KS, Johnson P, et al. Near-colorless HPHT synthetic diamonds from AOTC Group. Gems Gemol. 2014; 50: 30–45. Web of Science ®Google Scholar
D’Haenans-Johansson UFS, Katrusha A, Moe KS, et al. Large colorless HPHT-grown synthetic gem diamonds from New Diamond Technology, Russia. G&G. 2015; 51(3): 260–279. Web of Science ®Google Scholar
Eversole WG. Synthesis of diamond. US Patent No. 3,030,188. 1962. Google Scholar
Spitsyn B. v, Bouilov LL, Derjaguin B. Vapor growth of diamond on diamond and other surfaces. J Cryst Growth. 1981; 52: 219–226. Web of Science ®Google Scholar
Goodwin DG. Scaling laws for diamond chemical-vapor deposition. I. Diamond surface chemistry. J Appl Phys. 1993; 74(11): 6888–6894. Web of Science ®Google Scholar
Wang JT, Huang ZQ, Wan YZ, et al. Thermodynamic coupling effect and catalyst effect for the artificial diamond growth. J Mater Res. 1997; 12(6): 1530–1535. Web of Science ®Google Scholar
Wang H, Shen X, Wang X, et al. Simulation and experimental researches on the substrate temperature distribution of the large-capacity HFCVD setup for mass-production of diamond coated milling tools. Diamond Relat Mater. 2020; 101(107610): 107610. Web of Science ®Google Scholar
Smith JA, Rosser KN, Yagi H, et al. Diamond deposition in a DC-arc jet CVD system: Investigations of the effects of nitrogen addition. Diamond Relat Mater. 2001; 10(3–7): 370–375. Web of Science ®Google Scholar
Mallik A, Microwave plasma CVD grown single crystal diamonds – a review. J Coat Sci Technol. 2016; 3(2): 75–99. Google Scholar
Matsumoto S, Sato Y, Tsutsumi M, et al. Growth of diamond particles from methane-hydrogen gas. J Mater Sci. 1982; 17(11): 3106–3112. Web of Science ®Google Scholar
Kamo M, Sato Y, Matsumoto S, et al. Diamond synthesis from gas phase in microwave plasma. J Cryst Growth. 1983; 62(3): 642–644. Web of Science ®Google Scholar
Matsumoto S. Chemical vapour deposition of diamond in RF glow discharge. J Mater Sci Lett. 1985; 4(5): 600–602. Google Scholar
Kurihara K, Sasaki K, Kawarada M, et al. High rate synthesis of diamond by dc plasma jet chemical vapor deposition. Appl Phys Lett. 1988; 52(6): 437–438. Web of Science ®Google Scholar
Hanssen LM, Carrington WA, Butler JE, et al. Diamond synthesis using an oxygen-acetylene torch. Mater Lett. 1988; 7(7–8): 289–292. Web of Science ®Google Scholar
Hiraki A, Kawarada H, Wei J, et al. Preparation and characterization of wide area, high quality diamond film using magnetoactive plasma chemical vapour deposition. Surf Coat Technol. 1990; 43–44: 10–21. Web of Science ®Google Scholar
Hassouni K, Silva F, Gicquel A. Modelling of diamond deposition microwave cavity generated plasmas. J Phys D: Appl Phys. 2010; 43(15): 153001. Web of Science ®Google Scholar
Füner M, Wild C, Koidl P. Novel microwave plasma reactor for diamond synthesis. Appl Phys Lett. 1998; 72(10): 1149–1151. Web of Science ®Google Scholar
Bolshakov AP, Ralchenko VG, Yurov VY, et al. High-rate growth of single crystal diamond in microwave plasma in CH4/H2 and CH4/H2/Ar gas mixtures in presence of intensive soot formation. Diamond Relat Mater. 2016; 62: 49–57. Web of Science ®Google Scholar
Janssen G, Giling LJ. “Mosaic” growth of diamond. Diamond Relat Mater. 1995; 4(7): 1025–1031. Web of Science ®Google Scholar
Geis MW, Smith HI, Argoitia A, et al. Large-area mosaic diamond films approaching single-crystal quality. Appl Phys Lett. 1991; 58(22): 2485–2487. Web of Science ®Google Scholar
Geis MW, Efremow NN, Susalka R, et al. Mosaic diamond substrates approaching single-crystal quality using cube-shaped diamond seeds. Diamond Relat Mater. 1994; 4(1): 76–82. Web of Science ®Google Scholar
Janssen G, Schermer JJ, Giling LJ. Towards large area diamond substrates: the mosaic process. Proceeding of Materials Research Society Symposium. 1996. vol. 416, p. 33–44. Google Scholar
Schermer JJ, de Theije FK, Giling LJ. Mosaic growth of diamond: a study of homoepitaxial flame deposition and etching of {001}-oriented diamond layers. J Cryst Growth. 1996; 165(4): 387–401. Web of Science ®Google Scholar
Posthill JB, Malta DP, Humphreys TP, et al. Method of fabricating a free‐standing diamond single crystal using growth from the vapor phase. J Appl Phys. 1996; 79(5): 2722–2727. Web of Science ®Google Scholar
Posthill JB, Malta DP, Hudson GC, et al. Demonstration of a method to fabricate a large-area diamond single crystal. Thin Solid Films. 1995; 271(1–2): 39–49. Web of Science ®Google Scholar
Findeling-Dufour C, Gicquel A. Study for fabricating large area diamond single-crystal layers. Thin Solid Films. 1997; 308–309: 178–185. Web of Science ®Google Scholar
Findeling-Dufour C, Gicquel A, Chiron R. Growth of large single-crystal diamond layers: analysis of the junctions between adjacent diamonds. Diamond Relat Mater. 1998; 7(7): 986–998. Web of Science ®Google Scholar
Kobashi K, Nishibayashi Y, Yokota Y, et al. R&D of diamond films in the Frontier Carbon Technology Project and related topics. Diamond Relat Mater. 2003; 12: 233–240. Web of Science ®Google Scholar
Mokuno Y, Chayahara A, Yamada H. Synthesis of large single crystal diamond plates by high rate homoepitaxial growth using microwave plasma CVD and lift-off process. Diamond Relat Mater. 2008; 17(4–5): 415–418. Web of Science ®Google Scholar
Mokuno Y, Chayahara A, Yamada H, et al. Large single crystal diamond plates produced by microwave plasma CVD. MSF. 2009; 615–617: 991–994. Google Scholar
Yamada H, Chayahara A, Mokuno Y, et al. Fabrication of 1 inch mosaic crystal diamond wafers. Appl Phys Express. 2010; 3(5): 051301. Web of Science ®Google Scholar
Yamada H, Chayahara A, Mokuno Y, et al. Recent progresses in R&D of methods to fabricate inch-sized diamond wafers. In: Materials Challenges and Testing for Manufacturing, Mobility, Biomedical Applications and Climate. Cham (Switzerland): Springer; 2014. p. 97–106. Google Scholar
Yamada H, Chayahara A, Mokuno Y, et al. Uniform growth and repeatable fabrication of inch-sized wafers of a single-crystal diamond. Diamond Relat Mater. 2013; 33: 27–31. Web of Science ®Google Scholar
Yamada H, Chayahara A, Mokuno Y, et al. Developments of elemental technologies to produce inch-size single-crystal diamond wafers. Diamond Relat Mater. 2011; 20(4): 616–619. Web of Science ®Google Scholar
Yamada H, Chayahara A, Umezawa H, et al. Fabrication and fundamental characterizations of tiled clones of single-crystal diamond with 1-inch size. Diamond Relat Mater. 2012; 24: 29–33. Web of Science ®Google Scholar
Yamada H, Chayahara A, Mokuno Y, et al. A 2-in. mosaic wafer made of a single-crystal diamond. Appl Phys Lett. 2014; 104(10): 102110. Web of Science ®Google Scholar
Ohmagari S, Yamada H, Tsubouchi N, et al. Schottky barrier diodes fabricated on diamond mosaic wafers: Dislocation reduction to mitigate the effect of coalescence boundaries. Appl Phys Lett. 2019; 114(8): 082104. Web of Science ®Google Scholar
Tallaire A, Achard J, Silva F, et al. Growth of large size diamond single crystals by plasma assisted chemical vapour deposition: Recent achievements and remaining challenges. CR Phys. 2013; 14(2–3): 169–184. Web of Science ®Google Scholar
Muchnikov AB, Radishev DB, Vikharev AL, et al. Characterization of interfaces in mosaic CVD diamond crystal. J Cryst Growth. 2016; 442: 62–67. Web of Science ®Google Scholar
Wang X, Duan P, Cao Z, et al. Surface morphology of the interface junction of CVD mosaic single-crystal diamond. Materials. 2019; 13(1): 91. PubMed Web of Science ®Google Scholar
Shu G, Dai B, Ralchenko VG, et al. Epitaxial growth of mosaic diamond: mapping of stress and defects in crystal junction with a confocal Raman spectroscopy. J Cryst Growth. 2017; 463: 19–26. Web of Science ®Google Scholar
May PW, Tsai HY, Wang WN, et al. Deposition of CVD diamond onto GaN. Diamond Relat Mater. 2006; 15(4–8): 526–530. Web of Science ®Google Scholar
Xiao M, Zhang J, Duan X, et al. A partly-contacted epitaxial lateral overgrowth method applied to GaN material. Sci Rep. 2016; 6(1): 1–8. PubMedGoogle Scholar
Jastrzebski L. SOI by CVD: epitaxial lateral overgrowth (ELO): process—review. J Cryst Growth. 1983; 63(3): 493–526. Web of Science ®Google Scholar
Tang YH, Bi B, Golding B. Diamond heteroepitaxial lateral overgrowth. In: Proceedings of Materials Research Society Symposium, 2015. p. 1734. Google Scholar
Tokuda N, Umezawa H, Ri SG, et al. Atomically flat diamond (111): surface formation by homoepitaxial lateral growth. Diamond Relat Mater. 2008; 17(7–10): 1051–1054. Web of Science ®Google Scholar
Bauer T, Schreck M, Stritzker B. Epitaxial lateral overgrowth (ELO): of homoepitaxial diamond through an iridium mesh. Diamond Relat Mater. 2007; 16(4–7): 711–717. Web of Science ®Google Scholar
Wang YF, Chang X, Liu Z, et al. Lateral overgrowth of diamond film on stripes patterned Ir/HPHT-diamond substrate. J Cryst Growth. 2018; 489: 51–56. Web of Science ®Google Scholar
Fu J, Liu Z, Zhu T, et al. Fabrication of microchannels in single crystal diamond for microfluidic systems. Microfluid Nanofluid. 2018; 22(9): 92. Web of Science ®Google Scholar
Tallaire A, Brinza O, Mille V, et al. Reduction of dislocations in single crystal diamond by lateral growth over a macroscopic hole. Adv Mater. 2017; 29(16): 1604823. Web of Science ®Google Scholar
Aida H, Ikejiri K, Kim S-W, et al. Overgrowth of diamond layers on diamond microneedles: new concept for freestanding diamond substrate by heteroepitaxy. Diamond Relat Mater. 2016; 66: 77–82. Web of Science ®Google Scholar
Aida H, Kim S-W, Ikejiri K, et al. Fabrication of freestanding heteroepitaxial diamond substrate via micropatterns and microneedles. Appl Phys Express. 2016; 9(3): 035504. Web of Science ®Google Scholar
Verstraete MJ, Charlier JC. Why is iridium the best substrate for single crystal diamond growth? Appl Phys Lett. 2005; 86(19): 191917–191913. Web of Science ®Google Scholar
Stockel R, Janischowsky K, Rohmfeld S, et al. Diamond growth during bias pre-treatment in the microwave CVD of diamond. Diamond Relat Mater. 1996; 5(3–5): 321–325. Web of Science ®Google Scholar
Wolter SD, Stoner BR, Glass JT, et al. Textured growth of diamond on silicon via in situ carburization and bias-enhanced nucleation. Appl Phys Lett. 1993; 62(11): 1215–1217. Web of Science ®Google Scholar
Chavanne A, Arnault JC, Barjon J, et al. Bias-enhanced nucleation of diamond on iridium: a comprehensive study of the first stages by sequential surface analysis. Surf Sci. 2011; 605(5–6): 564–569. Web of Science ®Google Scholar
Kono S, Takano T, Goto T, et al. Effect of bias treatment in the CVD diamond growth on Ir(001). Diamond Relat Mater. 2004; 13(11–12): 2081–2087. Web of Science ®Google Scholar
Schreck M, Gsell S, Brescia R, et al. Ion bombardment induced buried lateral growth: the key mechanism for the synthesis of single crystal diamond wafers. Sci Rep. 2017; 7(1): 44462. PubMed Web of Science ®Google Scholar
Berdermann E, Afanaciev K, Ciobanu M, et al. Progress in detector properties of heteroepitaxial diamond grown by chemical vapor deposition on Ir/YSZ/Si(001): wafers. Diamond Relat Mater. 2019; 97: 107420. Web of Science ®Google Scholar
Popovich AF, Ralchenko VG, Balla VK, et al. Growth of 4∼ diameter polycrystalline diamond wafers with high thermal conductivity by 915 MHz microwave plasma chemical vapor deposition. Plasma Sci Technol. 2017; 19(3): 035503–035597. Web of Science ®Google Scholar
Ando Y, Kuwabara J, Suzuki K, et al. Patterned growth of heteroepitaxial diamond. Diamond Relat Mater. 2004; 13(11–12): 1975–1979. Web of Science ®Google Scholar
Washiyama S, Mita S, Suzuki K, et al. Coalescence of epitaxial lateral overgrowth-diamond on stripe-patterned nucleation on Ir/MgO(001). Appl Phys Express. 2011; 4(9): 095502– 095548. Web of Science ®Google Scholar
Ando Y, Kamano T, Suzuki K, et al. Epitaxial lateral overgrowth of diamonds on iridium by patterned nucleation and growth method. Jpn J Appl Phys. 2012; 51: 090101. Web of Science ®Google Scholar
Ichikawa K, Kurone K, Kodama H, et al. High crystalline quality heteroepitaxial diamond using grid-patterned nucleation and growth on Ir. Diamond Relat Mater. 2019; 94: 92–100. Web of Science ®Google Scholar
Yoshikawa T, Kodama H, Kono S, et al. Wafer bowing control of free-standing heteroepitaxial diamond (100): films grown on Ir(100): substrates via patterned nucleation growth. Thin Solid Films. 2015; 594: 120–128. Web of Science ®Google Scholar
Weiß C, Griesmayer E, Guerrero C, et al. A new CVD diamond mosaic-detector for (n, α): cross-section measurements at the n-TOF experiment at CERN. Nucl Instrum Methods Phys Res. 2013; 732: 190–194. Web of Science ®Google Scholar
Butler JE, Mankelevich YA, Cheesman A, et al. Understanding the chemical vapor deposition of diamond: recent progress. J Phys: Condens Matter. 2009; 21(36): 364201. PubMed Web of Science ®Google Scholar
Silva F, Bonnin X, Achard J, et al. Geometric modeling of homoepitaxial CVD diamond growth: I. The {100}{111}{110}{113} system. J Cryst Growth. 2008; 310(1): 187–203. Web of Science ®Google Scholar
Bigelow LK, D’Evelyn MP. Role of surface and interface science in chemical vapor deposition diamond technology. Surf Sci. 2002; 500(1–3): 986–1004. Web of Science ®Google Scholar
Ralchenko V, Sychov I, Vlasov I, et al. Quality of diamond wafers grown by microwave plasma CVD: effects of gas flow rate. Diamond Relat Mater. 1999; 8(2–5): 189–193. Web of Science ®Google Scholar
Ralchenko VG, Pleuler E, Lu FX, et al. Fracture strength of optical quality and black polycrystalline CVD diamonds. Diamond Relat Mater. 2012; 23: 172–177. Web of Science ®Google Scholar
Wild C, Herres N, Koidl P. Texture formation in polycrystalline diamond films. J Appl Phys. 1990; 68(3): 973–978. Web of Science ®Google Scholar
Shu G, Ralchenko VG, Bolshakov AP, et al. Evolution of surface relief of epitaxial diamond films upon growth resumption by microwave plasma chemical vapor deposition. CrystEngComm. 2020; 22(12): 2138–2146. Web of Science ®Google Scholar
de Theije FK, Schermer JJ, van Enckevort WJP. Effects of nitrogen impurities on the CVD growth of diamond: Step bunching in theory and experiment. Diamond Relat Mater. 2000; 9(8): 1439–1449. Web of Science ®Google Scholar
Schreck M, Mayr M, Weinl M, et al. Liftoff of single crystal diamond by epitaxial lateral overgrowth using SiO2 masks. Diamond Relat Mater. 2020; 101: 107606. Web of Science ®Google Scholar
Chae KW, Baik YJ, Park JK, et al. The 8-inch free-standing CVD diamond wafer fabricated by DC-PACVD. Diamond Relat Mater. 2010; 19(10): 1168–1171. Web of Science ®Google Scholar
Shu G, Ralchenko V, Bolshakov A, et al. Coessential-connection growth technology for large size single crystal diamond. Chinese Journal of Nature. 2019; 2: 100–110. Google Scholar
Vikharev AL, Gorbachev AM, Radishev DB. Physics and application of gas discharge in millimeter wave beams. J Phys D: Appl Phys. 2019; 52(1): 014001. Web of Science ®Google Scholar
Vlasov II, Barnard AS, Ralchenko VG, et al. Nanodiamond photoemitters based on strong narrow-band luminescence from silicon-vacancy defects. Adv Mater. 2009; 21(7): 808–812. Web of Science ®Google Scholar
Lifshitz Y. The mechanism of diamond nucleation from energetic species. Science. 2002; 297(5586): 1531–1533. PubMed Web of Science ®Google Scholar
Hörmann F, Schreck M, Stritzker B. First stages of diamond nucleation on iridium buffer layers. Diamond Relat Mater. 2001; 10(9–10): 1617–1621. Web of Science ®Google Scholar
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