Room temperature direct bonding of diamond and InGaP in atmospheric air

Jianbo Liang; Yuji Nakamura; Yutaka Ohno; Yasuo Shimizu; Yasuyoshi Nagai; Hongxing Wang; Naoteru Shigekawa

doi:10.1080/26941112.2020.1869435

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Room temperature direct bonding of diamond and InGaP in atmospheric air

Articles | Updated：2021-02-19

- Room temperature direct bonding of diamond and InGaP in atmospheric air
- Room temperature direct bonding of diamond and InGaP in atmospheric air
- Functional Diamond 2021年1卷第1期页码：110-116
- Affiliations：
  
  1. a Department of Electronic Information Systems Osaka City University
  2. b Institute for Materials Research (IMR) Tohoku University
  3. c Institute for Materials Research (IMR) Tohoku University Oarai
  4. d School of Electronic and Information Engineering Xian Jiaotong University
- Author bio：
- Funds：
- DOI：10.1080/26941112.2020.1869435
  中图分类号：
- 网络首发：2021-02-19，
  
  纸质出版：2021
- Accepted：
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Jianbo Liang, Yuji Nakamura, Yutaka Ohno, 等. Room temperature direct bonding of diamond and InGaP in atmospheric air[J]. Functional Diamond, 2021,1(1):110-116.

Jianbo Liang, Yuji Nakamura, Yutaka Ohno, et al. Room temperature direct bonding of diamond and InGaP in atmospheric air[J]. Functional Diamond2021, 1(1): 110-116.
Jianbo Liang, Yuji Nakamura, Yutaka Ohno, 等. Room temperature direct bonding of diamond and InGaP in atmospheric air[J]. Functional Diamond, 2021,1(1):110-116. DOI： 10.1080/26941112.2020.1869435.

Jianbo Liang, Yuji Nakamura, Yutaka Ohno, et al. Room temperature direct bonding of diamond and InGaP in atmospheric air[J]. Functional Diamond2021, 1(1): 110-116. DOI： 10.1080/26941112.2020.1869435.

摘要

Abstract

new technique of diamond and InGaP room temperature bonding in atmospheric air is reported. Diamond substrate cleaned with H

mixture solution is bonded to InGaP exposed after removing the GaAs layer by the H

O mixture solution. The bonding interface is free from interfacial voids and mechanical cracks. An atomic intermixing layer with a thickness of about 8 nm is formed at the bonding interface

which is composed of C

and O atoms. After annealing at 400 °C

no exfoliation occurred along the bonding interface. An increase of about 2 nm in the thickness of the atomic intermixing layer is observed

which plays a role in alleviating the thermal stress caused by the difference of the thermal expansion coefficient between diamond and InGaP. The bonding interface demonstrates high thermal stability to device fabrication processes. This bonding method has a large potential for bonding large diameter diamond and semiconductor materials.

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references

Yamamoto Y, Imai T, Tanabe K, et al. The measurement of thermal properties of diamond. Diamond Relat Mater. 1997; 6(8): 1057–1061. Web of Science ®Google Scholar

Nosaeva K, Weimann N, Rudolph M, et al. Erratum: Improved thermal management of InP transistors in transferred-substrate technology with diamond heat-spreading layer. Electron Lett. 2015; 51(13): 1010–1012. Web of Science ®Google Scholar

Cho J, Francis D, Altman D, et al. Phonon conduction in GaN-diamond composite substrate. J Appl Phys. 2017; 121(5): 055105. Web of Science ®Google Scholar

Käding OW, Rösler M, Zachai R, et al. Lateral thermal diffusivity of epitaxial diamond films. Diamond Relat Mater. 1994; 3(9): 1178–1182. Web of Science ®Google Scholar

Sun H, Pomeroy J, Simon R, et al. Temperature-dependent thermal resistance of GaN-on-diamond HEMT wafers. IEEE Electron Device Lett. 2016; 37(5): 621–624. Web of Science ®Google Scholar

Zhou Y, Anaya J, Pomeroy J, et al. Barrier-layer optimization for enhanced GaN-on-diamond device cooling. ACS Appl Mater Interfaces. 2017; 9(39): 34416–34422. PubMed Web of Science ®Google Scholar

Matsumae T, Kurashima Y, Umezawa Y, et al. Room-temperature bonding of single-crystal diamond and Si using Au/Au atomic diffusion bonding in atmospheric air. Microelectron Eng. 2018; 195: 68–73. Web of Science ®Google Scholar

Minoura Y, Ohki T, Okamoto N, et al. Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs. Jpn J Appl Phys. 2020; 59 (Suppl G): SGGD03. Web of Science ®Google Scholar

Mu F, He R, Suga T. Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices. Scr Mater. 2018; 150: 148–151. Web of Science ®Google Scholar

Cheng Z, Mu F, Yates L, et al. Interfacial thermal conductance across room-temperature-bonded GaN/diamond interfaces for GaN-on-diamond devices. ACS Appl Mater Interfaces. 2020; 12(7): 8376–8384. PubMed Web of Science ®Google Scholar

Liang J, Masuya S, Kasu M, et al. Realization of direct bonding of single crystal diamond and Si substrates. Appl Phys Lett. 2017; 110(11): 111603. Web of Science ®Google Scholar

Liang J, Masuya S, Kim S, et al. Stability of diamond/Si bonding interface during device fabrication process. Appl Phys Express. 2019; 12(1): 016501. Web of Science ®Google Scholar

Matsumae T, Kurashima Y, Umezawa H, et al. Hydrophilic direct bonding of diamond (111) substrate using treatment with H2SO4/H2O2. Jpn J Appl Phys. 2020; 59 (Suppl B): SBBA01. Web of Science ®Google Scholar

Choi S, Peake GM, Keeler GA, et al. Thermal design and characterization of heterogeneously integrated InGaP/GaAs HBTs. IEEE Trans Compon Packag Manuf Technol. 2016; 6(5): 740–748. Web of Science ®Google Scholar

Pierściński K, Pierścińska D, Iwińska M, et al. Investigation of thermal properties of mid-infrared AlGaAs/GaAs quantum cascade lasers. J Appl Phys. 2012; 112(4): 043112. Web of Science ®Google Scholar

Humbert B, Hellala N, Ehrhardt JJ, et al. X-ray photoelectron and Raman studies of microwave plasma assisted chemical vapour deposition (PACVD) diamond films. Appl Surf Sci. 2008; 254(20): 6400–6409. Web of Science ®Google Scholar

Wang C, Huang N, Zhuang H, et al. Photochemical functionalization of diamond films using a short carbon chain acid. Chem Phys Lett. 2016; 646: 87–90. Web of Science ®Google Scholar

López-Escalante MC, Gabás M, García I, et al. Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed b depth profiling and angle-resolved X-ray photoelectron spectroscopies. Appl Surf Sci. 2016; 360: 477–484. Web of Science ®Google Scholar

Hönle M, Oberhumer P, Hingerl K, et al. Mechanism of indium thin oxide//indium tin oxide direct wafer bonding. Thin Solid Films. 2020; 704: 137964. Web of Science ®Google Scholar

Straessle R, Pétremand Y, Briand D, et al. Evaluation of thin film indium bonding at wafer level. Procedia Eng. 2011; 25: 1493–1496. Google Scholar

Liang J, Zhou Y, Masuya S, et al. Annealing effect of surface-activated bonded diamond/Si interface. Diamond Relat Mater. 2019; 93: 187–192. Web of Science ®Google Scholar

Liang J, Nishida S, Arai M, et al. Effects of thermal annealing process on the electrical properties of p+-Si/n-SiC heterojunctions. Appl Phys Lett. 2014; 104(16): 161604. Web of Science ®Google Scholar

Howlader MMR, Zhang F. Void-free strong bonding of surface activated silicon wafers from room temperature to annealing at 600 °C. Thin Solid Film. 2010; 519(2): 804–808. Web of Science ®Google Scholar

Liang J, Ohno Y, Yamashita Y, et al. Characterization of nanoscopic Cu/diamond interfaces prepared by surface-activated bonding: implications for thermal management. ACS Appl Nano Mater. 2020; 3(3): 2455–2462. Web of Science ®Google Scholar

Takagi H, Maeda R, Hosoda N, et al. Transmission electron microscope observations of Si/Si interface bonded at room temperature by Ar beam surface activation. Jpn J Appl Phys. 1999; 38 (Part 1, No. 3A): 1589–1594. Web of Science ®Google Scholar

Takagi H, Kikuchi K, Maeda R, et al. Surface activated boding of silicon wafers at room temperature. Appl Phys Lett. 1996; 68(16): 2222–2224. Web of Science ®Google Scholar

Mu F, Cheng Z, Shi J, et al. High thermal boundary conductance across bonded heterogeneous GaN-SiC interfaces. ACS Appl Mater Interfaces. 2019; 11(36): 33428–33434. PubMed Web of Science ®Google Scholar

Al Mohtar A, Tessier G, Ritasalo R, et al. Thickness-dependent thermal properties of amorphous insulating thin films measured by photoreflectance microscopy. Thin Solid Films. 2017; 642: 157–162. Web of Science ®Google Scholar

Cheng Z, Mu F, You T, et al. Thermal transport across ion-cut monocrystalline β-Ga2O3 thin films and bonded β-Ga2O3–SiC interfaces. ACS Appl Mater Interfaces. 2020; 12(40): 44943–44951. PubMed Web of Science ®Google Scholar

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