Diamond’s extremely high hardness and chemical inertness make existing processing methods prone to causing damage and hinder the achievement of fine micro-machining

bringing significant challenges to the manufacturing of micro-devices like diamond sensors. To address this problem

this study combines the Monte Carlo method with Focused Ion Beam (FIB) processing technology to systematically investigate the FIB processing mechanism of diamond and optimize process parameters. The study first used SRIM simulations to analyze the sputter yield

material damage distribution

and energy loss characteristics of gallium and helium ions at different energies and incident angles. Then

it combined this with FIB experiments to verify the influence of beam current

set depth

and incident angle on the processed morphology. Furthermore

Raman spectroscopy was used to analyze the diamond damage layer. This study clarifies the core principles of diamond FIB processing

provides a key parameter basis and process guidance for the controllable manufacturing of diamond sensors and other micro-devices

and effectively promotes the development of high-precision diamond processing technology and its application expansion in the semiconductor and micro-sensing fields.