Flat-surfaced and large-size diamond wafers are essential for industrial applications

analogous to silicon (Si) wafers over 10-inch. A promising approach for the industrial-scale production of large-size diamond wafers involves chemical vapor deposition (CVD) techniques that generate large-area plasma. This article explores the growing and polishing methods aiming at CVD diamond wafers over 10-inch

based on our previous works and existing literature. The continuous growing strategy is proposed by combining radio frequency induction coupled plasma-enhanced CVD (RFICP CVD) and repositionable (or movable) substrate based on the Van der Drift growth mechanism. Molten iron erosion polishing (MIEP) is considered a method capable of polishing wafers over 10-inch due to its high material removal rate (MRR)

size-unlimited

great stress-released

and damage-free characteristics. The proposed methodology lays the foundation for manufacturing flat-surfaced

large-sized diamond wafers for application-oriented purposes.