Electrical actuation of single-crystal diamond MEMS resonators at high temperatures

Zilong Zhang; Keyun Gu; Guo Chen; Masataka Imura; Meiyong Liao

doi:10.1080/26941112.2024.2346085

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Electrical actuation of single-crystal diamond MEMS resonators at high temperatures

Research Article | Updated：2025-01-22

- Electrical actuation of single-crystal diamond MEMS resonators at high temperatures
- Functional Diamond Vol. 4, Issue 1, (2024)
- Affiliations：
  
  Research Center for Electronic and Optical Materials National Institute for Materials Science (NIMS) Tsukuba
- Author bio：
- Funds：
- DOI：10.1080/26941112.2024.2346085
  CLC：
- Online First：27 April 2024，
  
  Published：2024
- Accepted：
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Zilong Zhang, Keyun Gu, Guo Chen, et al. Electrical actuation of single-crystal diamond MEMS resonators at high temperatures[J]. Functional Diamond2024, 4(1).
DOI：

Zilong Zhang, Keyun Gu, Guo Chen, et al. Electrical actuation of single-crystal diamond MEMS resonators at high temperatures[J]. Functional Diamond2024, 4(1). DOI： 10.1080/26941112.2024.2346085.

摘要

Abstract

hieving efficient low-voltage actuation of microelectromechanical system (MEMS) resonators in high-temperature environments poses a difficult topic due to the thermal interference and the risk of high-temperature failure. In this work

the single-crystal diamond (SCD) resonators fabricated through the ion implantation-assisted lift-off (IAL) technique exhibit a SCD-on-SCD cantilever structure. We propose an electrical actuation system based on the electrostatic effect specifically designed for SCD MEMS resonators with a low radio-frequency amplitude of ∼ 100 mV. The SCD resonators demonstrate stable and efficient actuation across a wide temperature range

from room temperature to 500 °C. Importantly

the actuation voltage exhibits little impact on the resonance frequency and the

factor of the resonator. The SCD resonator showcases exceptional thermal stability in resonance frequency

with a low temperature coefficient of frequency (TCF) below −12 ppm/°C up to 500 °C. The developed actuation scheme holds tremendous potential as a robust platform for realizing SCD MEMS devices

particularly in applications requiring high integration at high temperatures.

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references

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