Fabrication of low thermal resistance 3C-SiC/diamond structure for GaN epitaxial layer growth

Ryo Kagawa; Yutaka Ohno; Yasuyoshi Nagai; Naoteru Shigekawa; Jianbo Liang

doi:10.1080/26941112.2024.2337352

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Fabrication of low thermal resistance 3C-SiC/diamond structure for GaN epitaxial layer growth

Research Article | Updated：2025-01-22

- Fabrication of low thermal resistance 3C-SiC/diamond structure for GaN epitaxial layer growth
- Functional Diamond Vol. 4, Issue 1, (2024)
- Affiliations：
  
  1. a Department of Electronic Information Systems Osaka City University
  2. b Institute for Materials Research (IMR) Tohoku University
  3. a Department of Electronic Information Systems Osaka City University Osaka Japan
  4. c Department of Physical and Electronics Osaka Metropolitan University
- Author bio：
- Funds：
- DOI：10.1080/26941112.2024.2337352
  CLC：
- Online First：12 April 2024，
  
  Published：2024
- Accepted：
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Ryo Kagawa, Yutaka Ohno, Yasuyoshi Nagai, et al. Fabrication of low thermal resistance 3C-SiC/diamond structure for GaN epitaxial layer growth[J]. Functional Diamond2024, 4(1).
DOI：

Ryo Kagawa, Yutaka Ohno, Yasuyoshi Nagai, et al. Fabrication of low thermal resistance 3C-SiC/diamond structure for GaN epitaxial layer growth[J]. Functional Diamond2024, 4(1). DOI： 10.1080/26941112.2024.2337352.

摘要

Abstract

Integrating diamonds with GaN presents a promising solution for enhancing heat dissipation. However

a critical challenge lies in developing an engineering substrate that facilitates the growth of high-quality GaN epitaxial layers

enabling the production of GaN-based devices with superior thermal management on a large scale. In this study

we have successfully developed an engineering substrate conducive to high-quality GaN growth. This accomplishment was achieved through the direct transfer of a 3 C-SiC thin film

originally grown on Si

to a diamond substrate at room temperature using the surface-activated bonding technique. After the transfer process

we observed the presence of a SiC amorphous layer at the interface

measuring approximately 18.5 nm in thickness. Notably

this thickness reduced to 14.5 nm after annealing at 1100 °C

indicating a transformation from amorphous to polycrystalline SiC due to recrystallization. Furthermore

it is crucial to highlight that no exfoliation of the 3 C-SiC/diamond bonding interfaces was observed even after subjecting them to annealing at 1100 °C. This observation is pivotal for ensuring the high-quality growth

of GaN crystals on diamonds. The thermal boundary conductance of the 3 C-SiC/diamond interface reached nearly 93 MW/m

·K

demonstrating significant efficiency for device cooling. These compelling results highlight the potential of the 3 C-SiC/diamond engineering substrate to enable high-performance GaN-based devices

providing significantly enhanced thermal management capabilities. This breakthrough represents a major stride forward in the field.

关键词

Keywords

references

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Related Institution

c Institute for Materials Research (IMR) Tohoku University Oarai

d School of Electronic and Information Engineering Xian Jiaotong University

a Department of Engineering Osaka City University

b Institute for Materials Research (IMR) Tohoku University Oarai

a Department of Engineering Osaka City University Osaka Japan

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