High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric

Ma Yuanchen; Ren Zeyang; Yang Shiqi; Su Kai; Zhang Jinfeng; Yang Xiaoli; Ning Xiuxiu; Zhang Jincheng; Hao Yue

doi:10.1080/26941112.2023.2219687

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High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric

Research Article | Updated：2023-06-13

- High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric
- Functional Diamond Vol. 3, Issue 1, (2023)
- Affiliations：
  
  1. a State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University
  2. a State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University Xi’an China
  3. b Xidian-Wuhu Research Institute
  4. c SICC CO. Ltd
- Author bio：
- Funds：
- DOI：10.1080/26941112.2023.2219687
  CLC：
- Online First：13 June 2023，
  
  Published：2023
- Accepted：
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Ma Yuanchen, Ren Zeyang, Yang Shiqi, et al. High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric[J]. Functional Diamond2023, 3(1).
DOI：

Ma Yuanchen, Ren Zeyang, Yang Shiqi, et al. High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric[J]. Functional Diamond2023, 3(1). DOI： 10.1080/26941112.2023.2219687.

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