Kamina S. Trillion sensors and MEMS. Sensors Mater. 2018; 30(4): 723–773.  [Google Scholar]

Yole. Emerging semiconductor substrates. Lyon, France: YOLE INTELLIGENCE; 2019.  [Google Scholar]

Lee K-W. 3-D hetero-integration technologies for multifunctional convergence systems. J Microelectron Packag Soc. 2015;22(2):11–19.  [Google Scholar]

Sang L. Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices. Funct Diamond. 2021;1(1):174–188.  [Google Scholar]

Nebel CE, Aharonovich I, Mizuochi N, et al. editors. Diamond for quantum applications part 1. Semiconductors and semimetals 103. London: Elsevier; 2020. ISBN 978-0-12-820240-1.  [Google Scholar]

Nebel CE, Aharonovich I, Mizuochi N, et al. editors. Diamond for quantum applications part 2. Semiconductors and semimetals 104. London: Elsevier; 2021. ISBN 978-0-323-85024-7.  [Google Scholar]

Brillas E, Martinez-Huitle CA, editors. Synthetic diamond films, preparation, electrochemistry, characterization and applications. Wiley Series on Electrocatalysis and Electrochemistry, John Wiley & Sons. 2011. ISBN 978-1-118-06236-4.  [Google Scholar]

Parangi T. A review on electrochemical and photochemical processes for hydrogen production. Comments Inorg Chem. 2022; 42(5): 271–336.  [Web of Science ®], [Google Scholar]

REACH: Registration, Evaluation, Authorization and Restriction of Chemicals: see : https://en.wikipedia.org/wiki/Registration,_Evaluation,_Authorisation_ad_Restriction_of_Chemicals.  [Google Scholar]

Gogotsi Y, Presser V, editors. Carbon nanomaterials. CRC Press; 2021. ISBN 9781138076815.  [Google Scholar]

Sarin VK, Nebel CE, editors. Comprehensive hard materials, super hard materials. Vol. 3, London: Elsevier; 2014. ISBN 978-0-444-63383-5.  [Google Scholar]

Bragg WH, Bragg WL. The structure of the diamond. Proc R Soc. 1913;156(610):277–291.  [Google Scholar]

Raman CV. Allotropic modifications of diamond. Nature. 1945;156(3949):22–23.  [Web of Science ®], [Google Scholar]

Bundy FP, Hall HT, Strong HM, et al. Man-made diamonds. Nature. 1955;176(4471):51–55.  [Web of Science ®], [Google Scholar]

Eversole WG. Synthesis of diamond, US patents 3,030,187,3,030,188, filed July 23, 1958.  [Google Scholar]

Angus JC, Will HA, Stanko WS. Growth of diamond seed crystals by vapor deposition. J Appl Phys. 1968;39(6):2915–2922.  [Web of Science ®], [Google Scholar]

Spitsyn BV, Deryagin BV. A technique of diamond growth on a diamond face, USSR Inventor’s Certificate 339,134 filed in July 10, 1956, published in a Bulletin of Inventions No 17; 1980, p. 323.  [Google Scholar]

Matsumoto S, Sato Y, Tsutsumi M, et al. Growth of diamond particles from methane-hydrogen gas. J Mater Sci. 1982;17(11):3106–3112.  [Web of Science ®], [Google Scholar]

Kamo M, Sato Y, Matsumoto S, et al. Diamond synthesis from gas in microwave plasma. J Cryst Growth. 1983;62(3):642–644.  [Web of Science ®], [Google Scholar]

Angus JC. Diamond synthesis by chemical vapor deposition: the early years. Diamond Relat Mater. 2014;49:77–86.  [Web of Science ®], [Google Scholar]

Sumiya H, Tamasaku K. Large defect-free synthetic type IIa diamond crystals synthesized via high pressure and high temperature. Jpn J Appl Phys. 2012;51(9R):090102.  [Google Scholar]

Kato H. Conductivity and impurity doping on single crystal diamond. In: Sarin VK, Nebel CE, editors. Comprehensive hard materials, super hard materials. Vol. 3, London: Elsevier; 2014, pp. 305–319. ISBN 9780-444-63383-5.  [Google Scholar]

Araujo D, Suzuki M, Lloret F, et al. Diamond for electronics: materials, processing and devices. Materials. 2021;14(22):7081.  [PubMed] [Web of Science ®], [Google Scholar]

Nebel CE. General properties of diamond. In: Arnault J-C, editors, Nanodiamonds, advanced material analysis, properties and applications, London: Elsevier; 2017. pp. 1–24. ISBN 9780-323-43029-6.  [Google Scholar]

Mildren RP. Intrinsic optical properties of diamond. In: Mildren RP, Rabeau JR, editors, Optical engineering of diamond, Wiley-VCH; 2013. pp. 1–34. ISBN 9783527411023.  [Google Scholar]

Gruber A, Dräbenstedt A, Tietz C, et al. Scanning confocal optical microscopy and magnetic resonance on single defect centers. Science. 1997;276(5321):2012–2014.  [Web of Science ®], [Google Scholar]

Yamasaki S, Makino T, Takeuchi D, et al. Potential of diamond power devices. In: Proceedings of the 25th International Symposium on Power Semiconductor Devices & ICs, Kanazawa, 6.2; 2013, pp. 307–310.  [Google Scholar]

Iwaki M, Sato S, Takahashi K, et al. Electrical-conductivity of nitrogen and argon implanted diamond. Nucl Instrum Methods Phys Res. 1983;209–210:1129–1133.  [Google Scholar]

Angus JC. Electrochemsitry on diamond: history and current status. In: Brillas E, Martinez-Huitle CA, editors, Synthetic diamond films, preparation, electrochemistry, characterization and applications, John Wiley & Sons; 2011, pp. 3–20. ISBN 9781-118-06236-4.  [Google Scholar]

Nebel CE. Surface electronic properties of diamond. In: Sarin VK, Nebel CE, editors, Comprehensive hard materials, super hard materials, Vol. 3, London: Elsevier; 2014, pp. 339–364. ISBN 9780-444-63383-5.  [Google Scholar]

Salvadori MC, Araújo WWR, Teixeira FS, et al. Termination of diamond surfaces with hydrogen, oxygen and fluorine using a small, simple plasma gun. Diamond Relat Mater. 2010;19(4):324–328.  [Web of Science ®], [Google Scholar]

Widmann CJ, Giese C, Wolfer M, et al. F- and Cl-terminations of (100) oriented single crystalline diamond. Phys Status Solidi A. 2014;211(10):2328–2332.  [Web of Science ®], [Google Scholar]

Maier F, Ristein J, Ley L. Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces. Phys Rev B. 2001;64(16):165411.  [Web of Science ®], [Google Scholar]

Cui JB, Ristein J, Ley L. Electron affinity of the bare and hydrogen covered single crystal diamond (111) surface. Phys Rev Lett. 1998;81(2):429–432.  [Web of Science ®], [Google Scholar]

Zhu D, Zhang LH, Ruther RE, et al. Photo-illuminated diamond as a solid-state source of solvated electrons in water for nitrogen reduction. Nat Mater. 2013;12(9):836–841.  [PubMed] [Web of Science ®], [Google Scholar]

Maier F, Riedel M, Mantel B, et al. Origin of surface conductivity in diamond. Phys Rev Lett. 2000;85(16):3472–3475.  [PubMed] [Web of Science ®], [Google Scholar]

Sumiya H. HPHT synthesis of large, high quality single crystal diamond. In: Nebel CE, editors, Comprehensive hard materials, Vol. 3, London: Elsevier; 2014, pp. 109–215. ISBN 9780-444-63383-5.  [Google Scholar]

Sumiya H, Satoh S. High-pressure synthesis of high-purity diamond crystal. Diamond Relat Mater. 1996;5(11):1359–1365.  [Web of Science ®], [Google Scholar]

Mokuno Y, Chayahara A, Soda Y, et al. Synthesizing single-crystal diamond by repetition of high rate homoepitaxial growth by microwave plasma CVD. Diamond Relat Mater. 2005;14(11–12):1743–1746.  [Web of Science ®], [Google Scholar]

Chayahara A, Mokuno Y, Horino Y, et al. The effect of nitrogen addition during high-rate homoepitaxial growth of diamond by microwave plasma CVD. Diamond Relat Mater. 2004;13(11–12):1954–1958.  [Web of Science ®], [Google Scholar]

Silva F, Achard J, Brinza O, et al. High quality, large surface area, homoepitaxial MPACVD diamond growth. Diamond Relat Mater. 2009;18(5–8):683–697.  [Web of Science ®], [Google Scholar]

Gicquel A, Silva F, Hassouni K. Diamond growth mechanisms in various environments. J Electrochem Soc. 2000;147(6):2218.  [Web of Science ®], [Google Scholar]

Geis MW, Smith HI, Argoitia A, et al. Large-area mosaic diamond films approaching single-crystal quality. Appl Phys Lett. 1991;58(22):2485–2487.  [Web of Science ®], [Google Scholar]

Yamada H, Chayahara A, Mokuno Y, et al. A 2-in. mosaic wafer made of a single-crystal diamond. Appl Phys Lett. 2014;104(10):102110.  [Web of Science ®], [Google Scholar]

https://www.d-edp.jp/en/.  [Google Scholar]

Zhu X, Liu J, Shao S, et al. Evolution of growth characteristics around the junction in the mosaic diamond. Diamond Relat Mater. 2021;120:108640.  [Web of Science ®], [Google Scholar]

Ohtsuka K, Suzuki K, Atsuhito Sawabe AS, et al. Epitaxial growth of diamond on iridium. Jpn J Appl Phys. 1996;35(8B):L1072.  [Web of Science ®], [Google Scholar]

Gsell S, Bauer T, Goldfuß J, et al. A route to diamond wafers by epitaxial deposition on silicon via iridium/yttria-stabilized zirconia buffer layers. Appl Phys Lett. 2004;84(22):4541–4543.  [Web of Science ®], [Google Scholar]

Fischer M, Gsell S, Schreck M, et al. Preparation of 4-inch Ir/YSZ/Si(001) substrates for the large-area deposition of single-crystal diamond. Diamond Relat Mater. 2008;17(7–10):1035–1038.  [Web of Science ®], [Google Scholar]

Bauer T, Gsell S, Schreck M, et al. Growth of epitaxial diamond on silicon via iridium/SrTiO3 buffer layers. Diamond Relat Mater. 2005;14(3–7):314–317.  [Web of Science ®], [Google Scholar]

Schreck M. in, Vol Single crystal diamond growth on iridium. In: Nebel CE, editors, Comprehensive hard materials. Vol. 3, Elsevier; 2014, pp. 269–304. ISBN 9780-444-63383-5.  [Google Scholar]

Yole Development. Emerging semiconductor substrates: market and Technology Trends; Lyon, France: YOLE INTELLIGENCE; 2019.  [Google Scholar]

Sumiya H, Toda N, Nishibayashi Y, et al. Crystalline perfection of high purity synthetic diamond crystal. J Crystal Growth. 1997;178(4):485–494.  [Web of Science ®], [Google Scholar]

Ohmagari S, Yamada H, Tsubouchi N, et al. Large reduction of threading dislocations in diamond by hot-filament chemical vapor deposition accompanying W incorporations. Appl Phys Lett. 2018;113(3):032108.  [Web of Science ®], [Google Scholar]

Wang R, Lin F, Niu G, et al. Reducing threading dislocations of single-crystal diamond via in situ tungsten incorporation. Materials. 2022;15(2):444.  [PubMed] [Web of Science ®], [Google Scholar]

Rönsch S, Schneider J, Matthischke S, et al. Review on methanation – from fundamentals to current projects. Fuel. 2016;166:276–296.  [Web of Science ®], [Google Scholar]

https://www.thyssenkrupp.com/de/unternehmen/innovation/technologien-fuer-die-energiewende/wasserelektrolyse.html.  [Google Scholar]

Idriss H. Hydrogen production from water: past and present. Curr Opin Chem Eng. 2020;29:74–82.  [Web of Science ®], [Google Scholar]

https://www.co2.earth/daily-co2#:∼:text=418.60%20ppm&text=This%20table%20presents%20the%20most,atmospheric%20CO2%20on%20the%20planet.  [Google Scholar]

https://www.iea.org/reports/direct-air-capture.  [Google Scholar]

Zhdanov V, Sokolova M, Smirnov P, et al. A comparative analysis of energy and water consumption of mined versus synthetic diamonds. Energies. 2021;14(21):7062.  [Web of Science ®], [Google Scholar]

Krishnan N, Boyd S, Somani A, et al. A hybride life cycle inventory of nano-scale semiconductor manufacturing. Environ Sci Technol. 2008;42(8):3069–3075.  [PubMed] [Web of Science ®], [Google Scholar]

Besen MM, Sevillano E, Smith DK. Microwave plasma reactor. Applied Science and Technology, United States Patent 5,556,475, Sep. 17, 1996.  [Google Scholar]

Füner M, Wild C, Koidl P. Simulation and development of optimized microwave plasma reactors for diamond deposition. Surf Coat Technol. 1999;116–119:853–862.  [Web of Science ®], [Google Scholar]

Du ZL, Wu Z, Gan WW, et al. Multi-physics modeling and process simulation for a frequency-shifted solid-state source microwave oven. IEEE Access. 2019;7:184726–184733.  [Web of Science ®], [Google Scholar]

https://www.mordorintelligence.com/industry-reports/synthetic-diamond-market.  [Google Scholar]

https://www.grandviewresearch.com/industry-analysis/silicon-carbide-market.  [Google Scholar]

https://www.grandviewresearch.com/industry-analysis/gan-gallium-nitride-semiconductor-devices-market.  [Google Scholar]

https://www.transparencymarketresearch.com/magnetometer-sensor-market.html.  [Google Scholar]

https://www.adroitmarketresearch.com/industry-reports/nanodiamond-market.  [Google Scholar]

Yole. Diamond Materials for Semiconductor Applications; 2013.  [Google Scholar]

Yole. AlScN-MEMS-filter for high-frequency-communication: markets and properties; 2014.  [Google Scholar]