Preparation of diamond on GaN using microwave plasma chemical vapor deposition with double-substrate structure

Yurui Wang; Deng Gao; Tong Zhang; Hao Zhang; Yu Zhang; Qiuming Fu; Hongyang Zhao; Zhibin Ma

doi:10.1080/26941112.2023.2183097

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Preparation of diamond on GaN using microwave plasma chemical vapor deposition with double-substrate structure

Research Article | Updated：2023-03-02

- Preparation of diamond on GaN using microwave plasma chemical vapor deposition with double-substrate structure
- Functional Diamond Vol. 3, Issue 1, (2023)
- Affiliations：
  
  Hubei Key Laboratory of Plasma Chemistry and Advanced Materials Department of Materials Science and Engineering Wuhan Institute of Technology
- Author bio：
- Funds：
- DOI：10.1080/26941112.2023.2183097
  CLC：
- Online First：02 March 2023，
  
  Published：2023
- Accepted：
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Yurui Wang, Deng Gao, Tong Zhang, et al. Preparation of diamond on GaN using microwave plasma chemical vapor deposition with double-substrate structure[J]. Functional Diamond2023, 3(1).
DOI：

Yurui Wang, Deng Gao, Tong Zhang, et al. Preparation of diamond on GaN using microwave plasma chemical vapor deposition with double-substrate structure[J]. Functional Diamond2023, 3(1). DOI： 10.1080/26941112.2023.2183097.

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Mishra UK, Parikh P, Wu Y-F. AlGaN/GaN HEMTs-an overview of device operation and applications. Proc. IEEE. 2002;90(6):1022–1031. [Web of Science ®], [Google Scholar]

Kanamura M, Ohki T, Kikkawa T, et al. Recent progress in GaN HEMT for high-frequency and high-power applications; Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2012. IEEE. [Google Scholar]

Ejeckam F, Francis D, Faili F, et al. S2-T1: GaN-on-diamond: A brief history; Proceedings of the 2014 Lester Eastman Conference on High Performance Devices (LEC), 2014. IEEE. [Google Scholar]

Ishizaki T, Yanase M, Kuno A, et al. Thermal simulation of joints with high thermal conductivities for power electronic devices. Microelectron Reliab. 2015;55(7):1060–1066. [Web of Science ®], [Google Scholar]

Ohno Y, Kuzuhara M. Application of GaN-based heterojunction FETs for advanced wireless communication. IEEE Trans. Electron Devices. 2001;48(3):517–523. [Web of Science ®], [Google Scholar]

Boutros KS, Chu R, Hughes B. GaN power electronics for automotive application; Proceedings of the 2012 IEEE Energytech, 2012. IEEE. [Google Scholar]

Muraro J-L, Nicolas G, Forestier S, et al. GaN for space application: almost ready for flight. Int J Microw Wirel Technol. 2010;2(1):121–133. [Web of Science ®], [Google Scholar]

Zhang L, Wang S, Shao Y, et al. One-step fabrication of porous GaN crystal membrane and its application in energy storage. Sci Rep. 2017;7(1):1–9. [PubMed] [Web of Science ®], [Google Scholar]

Gaska R, Osinsky A, Yang J, et al. Self-heating in high-power AlGaN-GaN HFETs. IEEE Electron Device Lett. 1998;19(3):89–91. [Web of Science ®], [Google Scholar]

Filippov K, Balandin A. The effect of the thermal boundary resistance on self-heating of AlGaN/GaN HFETs. Mater Res Soc Internet J Nitride Semicond Res. 2003;8:4. [Google Scholar]

Francis D, Wasserbauer J, Faili F, et al. GaN-HEMT epilayers on diamond substrates: recent progress. 2007. [Google Scholar]

Shibata H, Waseda Y, Ohta H, et al. High thermal conductivity of gallium nitride (GaN) crystals grown by HVPE process. Mater Trans. 2007;48(10):2782–2786. [Web of Science ®], [Google Scholar]

Wei R, Song S, Yang K, et al. Thermal conductivity of 4H-SiC single crystals. J Appl Phys. 2013;113(5):053503. [Web of Science ®], [Google Scholar]

Singhal S, Li T, Chaudhari A, et al. Reliability of large periphery GaN-on-Si HFETs. Microelectron Reliab. 2006;46(8):1247–1253. [Web of Science ®], [Google Scholar]

Wort C, Sweeney C, Cooper M, et al. Thermal properties of bulk polycrystalline CVD diamond. Diamond Relat Mater. 1994;3(9):1158–1167. [Web of Science ®], [Google Scholar]

Sang L. Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices. Functional Diamond. 2021;1(1):174–188. [Google Scholar]

Cheng Z, Mu F, Yates L, et al. Interfacial thermal conductance across room-temperature-bonded GaN/diamond interfaces for GaN-on-diamond devices. ACS Appl Mater Interfaces. 2020;12(7):8376–8384. [PubMed] [Web of Science ®], [Google Scholar]

Liang J, Kobayashi A, Shimizu Y, et al. Fabrication of GaN/diamond heterointerface and interfacial chemical bonding state for highly efficient device design. Adv Mater. 2021;33(43):2104564. [Web of Science ®], [Google Scholar]

Chernykh M, Andreev A, Ezubchenko I, et al. GaN-based heterostructures with CVD diamond heat sinks: a new fabrication approach towards efficient electronic devices. Appl Mater Today. 2022;26:101338. [Web of Science ®], [Google Scholar]

Ahmed R, Siddique A, Anderson J, et al. Integration of GaN and diamond using epitaxial lateral overgrowth. ACS Appl Mater Interfaces. 2020;12(35):39397–39404. [PubMed] [Web of Science ®], [Google Scholar]

Soleimanzadeh R, Naamoun M, Floriduz A, et al. Seed dibbling method for the growth of high-quality diamond on GaN. ACS Appl Mater Interfaces. 2021;13(36):43516–43523. [PubMed] [Web of Science ®], [Google Scholar]

Mandal S, Thomas EL, Middleton C, et al. Surface zeta potential and diamond seeding on gallium nitride films. ACS Omega. 2017;2(10):7275–7280. [PubMed] [Web of Science ®], [Google Scholar]

Xin J. Study on preparation and properties of GaN foundation corundum heat dissipation layer. University of Science and Technology Beijing, 2020. [Google Scholar]

Ahmed R, Siddique A, Anderson J, et al. Selective area deposition of hot filament CVD diamond on 100 mm MOCVD grown AlGaN/GaN wafers. Cryst Growth Des. 2019;19(2):672–677. [Web of Science ®], [Google Scholar]

Graebner J, Jin S, Kammlott G, et al. Large anisotropic thermal conductivity in synthetic diamond films. Nature. 1992;359(6394):401–403. [Web of Science ®], [Google Scholar]

May PW, Tsai HY, Wang WN, et al. Deposition of CVD diamond onto GaN. Diamond Relat Mater. 2006;15(4–8):526–530. [Web of Science ®], [Google Scholar]

Kangjun D, Zhibin M, Hongwei H, et al. Novel reactor with double substrate holders for microwave plasma chemical vapor deposition. Chin J Vacuum Sci Technol. 2017;37(5):488. [Google Scholar]

Malakoutian M, Ren C, Woo K, et al. Development of polycrystalline diamond compatible with the latest N-Polar GaN mm-Wave technology. Cryst Growth Des. 2021;21(5):2624–2632. [Web of Science ®], [Google Scholar]

Zhou Y, Ramaneti R, Anaya J, et al. Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs. Appl Phys Lett. 2017;111(4):041901. [Web of Science ®], [Google Scholar]

Yates L, Anderson J, Gu X, et al. Low thermal boundary resistance interfaces for GaN-on-diamond devices. ACS Appl Mater Interfaces. 2018;10(28):24302–24309. [PubMed] [Web of Science ®], [Google Scholar]

Kuwabara A, Matsunaga K, Tanaka I. Lattice dynamics and thermodynamical properties of silicon nitride polymorphs. Phys Rev B. 2008;78(6):064104. [Web of Science ®], [Google Scholar]

Liping T. Spectral analysis of diamond films deposited by MPCVD. Wuhan Institute of Technology, 2013. [Google Scholar]

Mitsuda Y, Kojima Y, Yoshida T, et al. The growth of diamond in microwave plasma under low pressure. J Mater Sci. 1987;22(5):1557–1562. [Web of Science ®], [Google Scholar]

Balestrino G, Marinelli M, Milani E, et al. Growth of diamond films: general correlation between film morphology and plasma emission spectra. Appl Phys Lett. 1993;62(8):879–881. [Web of Science ®], [Google Scholar]

Rong WU, Yan LI, Shun-Guan ZHU, et al. Emission spectroscopy diagnostics of plasma electron temperature. Spectrosc Spectral Anal. 2008;4:731–735. [Google Scholar]

Lei X, Wang L, Shen B, et al. Microdrill with variations in thickness of diamond coating. Surf Eng. 2016;32(3):165–171. [Web of Science ®], [Google Scholar]

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