Germanium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer

Zhang Minghui; Wang Wei; Wen Feng; Lin Fang; Chen Genqiang; Wang Fei; He Shi; Wang Yanfeng; Fan Shuwei; Bu Renan; Min Tai; Yu Cui; Wang Hongxing

doi:10.1080/26941112.2022.2159775

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Germanium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer

Research Article | Updated：2023-01-20

- Germanium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer
- Functional Diamond Vol. 2, Issue 1, Pages: 258-262(2022)
- Affiliations：
  
  1. a Key Laboratory of Physical Electronics and Devices Ministry of Education School of Electronic Science and Engineering Xi’an Jiaotong University Xi’an
  2. b State Key Laboratory for Mechanical Behavior of Materials Center for Spintronics and Quantum System School of Materials Science and Engineering Xi’an Jiaotong University Xi’an
  3. c National Key Laboratory of Application Specific Integrated Circuit Hebei Semiconductor Research Institute Shijiazhuang
- Author bio：
- Funds：
- DOI：10.1080/26941112.2022.2159775
  CLC：
- Online First：20 January 2023，
  
  Published：2022
- Accepted：
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Zhang Minghui, Wang Wei, Wen Feng, et al. Germanium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer[J]. Functional Diamond2022, 2(1): 258-262.
DOI：

Zhang Minghui, Wang Wei, Wen Feng, et al. Germanium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer[J]. Functional Diamond2022, 2(1): 258-262. DOI： 10.1080/26941112.2022.2159775.

摘要

Abstract

Investigation of germanium gate hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with Al

dielectric layer has been successfully performed. The device demonstrates a normally-on characteristics

whose maximum drain-source current density

threshold voltage

maximum transconductance

on/off ratio

subthreshold swing

capacitance

carrier density

saturation carrier mobility

fixed charge density and interface state density are of −37.3 mA/mm

0.22 V

6.42 mS/mm

134 mV/dec

0.33 μF/cm

9.83 × 10

−2

97.9 cm

/V·s

7.63 × 10

−2

and 2.56 × 10

−2

·eV

−1

respectively. This work is significant to the development of H-terminated diamond FET.

关键词

Keywords

references

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