Room-temperature bonding of GaN and diamond via a SiC layer

Ayaka Kobayashi; Hazuki Tomiyama; Yutaka Ohno; Yasuo Shimizu; Yasuyoshi Nagai; Naoteru Shigekawa; Jianbo Liang

doi:10.1080/26941112.2022.2145508

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Room-temperature bonding of GaN and diamond via a SiC layer

Research Article | Updated：2022-12-01

- Room-temperature bonding of GaN and diamond via a SiC layer
- Functional Diamond Vol. 2, Issue 1, Pages: 142-150(2022)
- Affiliations：
  
  1. a Department of Engineering Osaka City University
  2. b Institute for Materials Research (IMR) Tohoku University Oarai
  3. a Department of Engineering Osaka City University Osaka Japan
  4. c Department of Physical Electronics Osaka Metropolitan University
- Author bio：
- Funds：
- DOI：10.1080/26941112.2022.2145508
  CLC：
- Online First：01 December 2022，
  
  Published：2022
- Accepted：
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Ayaka Kobayashi, Hazuki Tomiyama, Yutaka Ohno, et al. Room-temperature bonding of GaN and diamond via a SiC layer[J]. Functional Diamond2022, 2(1): 142-150.
DOI：

Ayaka Kobayashi, Hazuki Tomiyama, Yutaka Ohno, et al. Room-temperature bonding of GaN and diamond via a SiC layer[J]. Functional Diamond2022, 2(1): 142-150. DOI： 10.1080/26941112.2022.2145508.

摘要

Abstract

GaN-on-diamond structure is the most promising candidate for improving the heat dissipation efficiency of GaN-based power devices. Room-temperature bonding of GaN and diamond is an efficient technique for fabricating this structure. However

it is extremely difficult to polish diamond to an average roughness (Ra) below 0.4 nm

especially for polycrystalline diamond. In this work

Room-temperature bonding of GaN and rough-surfaced diamond with a SiC layer was successfully achieved by a surface-activated bonding (SAB) method. The diamond surface’s initial Ra value was 0.768 nm

but after deposition of the SiC layer

the Ra decreased to 0.365 nm. The SiC layer formed at the as-bonded GaN/diamond interface was amorphous

with a thickness of about 7 nm. After annealing at 1000-°C

the amorphous SiC layer became polycrystalline

and its thickness increased to approximately 12 nm. These results indicate that the deposition of a SiC layer on diamond can efficiently lower the diamond surface’s roughness and thus facilitate room-temperature bonding.

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references

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Related Institution

a Department of Electronic Information Systems Osaka City University

b Institute for Materials Research (IMR) Tohoku University

a Department of Electronic Information Systems Osaka City University Osaka Japan

c Department of Physical and Electronics Osaka Metropolitan University

a School of Materials & Chemistry Southwest University of Science & Technology

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