Tianwei Li, Jianxin Hao, Wei Cao, et al. Designing of room temperature diluted ferromagnetic Fe doped diamond semiconductor[J]. Functional Diamond2022, 2(1): 80-83.
DOI:
Tianwei Li, Jianxin Hao, Wei Cao, et al. Designing of room temperature diluted ferromagnetic Fe doped diamond semiconductor[J]. Functional Diamond2022, 2(1): 80-83. DOI: 10.1080/26941112.2022.2098065.
Designing of room temperature diluted ferromagnetic Fe doped diamond semiconductor
摘要
Abstract
Semiconductor devices generally take advantage of the charge of electrons
whereas magnetic materials are used for recording information involving electron spin. To make use of both charge and spin of electrons in semiconductors
a high concentration of magnetic elements can be introduced in nonmagnetic III-V semiconductors to make magnetic semiconductor. In this work
Fe-Diamond was obtained with low solubility by modified microwave plasma chemical vapor deposition technique. Magnetic measurements revealed that the magnetic transition temperature from paramagnetic to ferromagnetic-like is above room temperature. The bandgap of Fe-Diamond is calculated to be 1.65 eV
which indicates that Fe-Diamond is a room temperature diluted ferromagnetic semiconductor.
关键词
Keywords
references
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