Radiation effect of X-ray with 100 kGy dose on the electrical properties of MESFET based on hydrogen-terminated diamond surface conductivity

Mingchao Yang; Takehiro Shimaoka; Liwen Sang; Junichi H. Kaneko; Satoshi Koizumi; Meiyong Liao

doi:10.1080/26941112.2022.2066481

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Radiation effect of X-ray with 100 kGy dose on the electrical properties of MESFET based on hydrogen-terminated diamond surface conductivity

Research Article | Updated：2022-04-23

- Radiation effect of X-ray with 100 kGy dose on the electrical properties of MESFET based on hydrogen-terminated diamond surface conductivity
- Functional Diamond Vol. 2, Issue 1, Pages: 40-45(2022)
- Affiliations：
  
  1. a National Institute for Materials Science Tsukuba Ibaraki Japan
  2. b Department of Physics Hebei Normal University of Science and Technology Qinhuangdao
  3. a National Institute for Materials Science Tsukuba
  4. c International Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science Tsukuba
  5. d Applied Quantum Beam Engineering Faculty of Engineering Hokkaido University Sapporo
- Author bio：
- Funds：
- DOI：10.1080/26941112.2022.2066481
  CLC：
- Online First：23 April 2022，
  
  Published：2022
- Accepted：
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Mingchao Yang, Takehiro Shimaoka, Liwen Sang, et al. Radiation effect of X-ray with 100 kGy dose on the electrical properties of MESFET based on hydrogen-terminated diamond surface conductivity[J]. Functional Diamond2022, 2(1): 40-45.
DOI：

Mingchao Yang, Takehiro Shimaoka, Liwen Sang, et al. Radiation effect of X-ray with 100 kGy dose on the electrical properties of MESFET based on hydrogen-terminated diamond surface conductivity[J]. Functional Diamond2022, 2(1): 40-45. DOI： 10.1080/26941112.2022.2066481.

摘要

Abstract

The irradiation effect of X-ray on the electrical properties of Schottky-barrier diode (SBD) and metal-semiconductor field-effect transistors (MESFET) based on the surface conductivity of hydrogen-terminated single-crystal diamond (SCD) epilayers was investigated. The Ohmic contact was formed by a Pd/Ti/Au multilayer and the Schottky metal was Al thin film for the fabrication of the diamond SBDs and MESFETs. The X-ray irradiation was performed with a dose of 100 kGy. It was observed that both the forward current of the SBDs and the drain current of the MESFETs experienced a reduction after the X-ray irradiation. The type of the single-crystal diamond substrate had an obvious effect on the radiation properties. For the MESFETs on the type-Ib SCD substrate

the variation of the drain currents as the irradiation was inhomogeneous across the devices. For the MESFETs on the type-IIa SCD substrate

the reduction of the drain currents is more uniform and the threshold voltage changed little upon X-ray irradiation. The partial oxidation in the air of the exposure area in the device and the edge of the Al gate may be responsible for the degradation of the device performance under X-ray irradiation. The passivation technique with radiation-robustness is needed for diamond devices based on the surface conductivity of diamond.

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