Design of a H-terminated diamond MOSFET device structure with an improved breakdown performance by TCAD simulation

Hanming Ding; Kun Tang; Bo Feng; Xiaolong Wu; Liangxue Gu; Chuang Wang; Cheng Wang; Xiang Xiong; Shunming Zhu; Jiandong Ye; Shulin Gu

doi:10.1080/26941112.2026.2738292

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Design of a H-terminated diamond MOSFET device structure with an improved breakdown performance by TCAD simulation

Updated：2026-09-26

- Design of a H-terminated diamond MOSFET device structure with an improved breakdown performance by TCAD simulation
- Design of a H-terminated diamond MOSFET device structure with an improved breakdown performance by TCAD simulation
- Functional Diamond 2026年6卷第1期
- Affiliations：
  
  1. a School of Electronic Science and Engineering Nanjing University Nanjing China
  2. b Jiangsu Key Lab of Advanced Semiconductors and High Energy-Efficiency Devices Nanjing University
  3. c School of Physics Nanjing University
- Author bio：
- Funds：
- DOI：10.1080/26941112.2026.2738292
  中图分类号：
- 网络首发：2026-09-25，
  
  纸质出版：2026
- Accepted：
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Hanming Ding, Kun Tang, Bo Feng, 等. Design of a H-terminated diamond MOSFET device structure with an improved breakdown performance by TCAD simulation[J]. Functional Diamond, 2026,6(1).

Hanming Ding, Kun Tang, Bo Feng, et al. Design of a H-terminated diamond MOSFET device structure with an improved breakdown performance by TCAD simulation[J]. Functional Diamond, 2026, 6(1).
Hanming Ding, Kun Tang, Bo Feng, 等. Design of a H-terminated diamond MOSFET device structure with an improved breakdown performance by TCAD simulation[J]. Functional Diamond, 2026,6(1). DOI： 10.1080/26941112.2026.2738292.

Hanming Ding, Kun Tang, Bo Feng, et al. Design of a H-terminated diamond MOSFET device structure with an improved breakdown performance by TCAD simulation[J]. Functional Diamond, 2026, 6(1). DOI： 10.1080/26941112.2026.2738292.

摘要

Abstract

This paper proposes a hydrogen-terminated diamond MOSFET structure with a buried N-layer and systematically studies its static and breakdown characteristics using Sentaurus TCAD. By introducing an N-type buried layer below the gate-drain channel

the internal electric field distribution of the device is effectively modulated

while new electric field peaks are formed within the drift region

achieving uniform distribution of the electric field between gates and drains. Simulation results show that the proposed structure can significantly increase the device breakdown voltage while having less impact on on-resistance

thereby achieving a higher Baliga’s figure of merit (BFOM).

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