Emerging oxidized silicon-terminated (C-Si-O) diamond field-effect transistors toward industrial applications

Yu Fu; Ze Peng; Jinfeng Zhang; Zeyang Ren; Kai Su; Hiroshi Kawarada; Yue Hao; Jincheng Zhang

doi:10.1080/26941112.2026.2714621

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Emerging oxidized silicon-terminated (C-Si-O) diamond field-effect transistors toward industrial applications

Updated：2026-09-26

- Emerging oxidized silicon-terminated (C-Si-O) diamond field-effect transistors toward industrial applications
- Emerging oxidized silicon-terminated (C-Si-O) diamond field-effect transistors toward industrial applications
- Functional Diamond 2026年6卷第1期
- Affiliations：
  
  1. a State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xidian University
  2. b Faculty of Science and Engineering Waseda University
- Author bio：
- Funds：
- DOI：10.1080/26941112.2026.2714621
  中图分类号：
- 网络首发：2026-08-23，
  
  纸质出版：2026
- Accepted：
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Yu Fu, Ze Peng, Jinfeng Zhang, 等. Emerging oxidized silicon-terminated (C-Si-O) diamond field-effect transistors toward industrial applications[J]. Functional Diamond, 2026,6(1).

Yu Fu, Ze Peng, Jinfeng Zhang, et al. Emerging oxidized silicon-terminated (C-Si-O) diamond field-effect transistors toward industrial applications[J]. Functional Diamond, 2026, 6(1).
Yu Fu, Ze Peng, Jinfeng Zhang, 等. Emerging oxidized silicon-terminated (C-Si-O) diamond field-effect transistors toward industrial applications[J]. Functional Diamond, 2026,6(1). DOI： 10.1080/26941112.2026.2714621.

Yu Fu, Ze Peng, Jinfeng Zhang, et al. Emerging oxidized silicon-terminated (C-Si-O) diamond field-effect transistors toward industrial applications[J]. Functional Diamond, 2026, 6(1). DOI： 10.1080/26941112.2026.2714621.

摘要

Abstract

Diamond surfaces terminated with a silicon layer (C–Si) can induce a two-dimensional hole gas (2DHG) layer at the insulator/diamond interface

enabling the realization of p-channel metal–oxide-semiconductor field-effect transistors (MOSFETs). Through two primary fabrication routes—namely

SiO

annealing in a reducing atmosphere and silicon molecular beam deposition (MBD) at high temperatures—stable oxidized silicon-terminated (C–Si–O) and C–Si diamond channels have been realized. These channels facilitate normally-off p-channel FETs with threshold voltages (

) ranging from −3 to −16 V and hole mobilities between 100 and 200 cm

/V·s. For instance

a (111)-oriented C–Si–O MOSFET with a

of −5.6 V delivers an output current density of −311 mA/mm

whereas another MBD C–Si–O MOSFET with a varying source-to-drain distance (

) shows a

ΔV

shift whose magnitude is less than 0.2 V. This review provides a critical overview of the chemical structures

the formation methods

and operational mechanisms of C–Si–O diamond surfaces. It also summarizes recent progress in C–Si–O diamond electronic devices

with emphasis on device architectures

fabrication techniques

and electrical characteristics. Finally

key challenges and potential pathways toward the industrial adoption of this emerging technology are discuss

ed.

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