This review comprehensively summarizes the latest developments in diamond semiconductor materials

emphasizing their outstanding attributes for high-power electronics. These include an ultra-wide bandgap of 5.47 eV

high electron/hole mobility of 4

000/3

800 cm

2

/(V·s)

a breakdown electric field of 20 MV/cm

and a thermal conductivity of 22 W/cm·K. Despite the hurdles in n-type doping

recent progress in p-type Schottky barrier diodes (SBDs) and unipolar field-effect transistors (FETs) through terminal engineering has led to remarkable performances. These achievements encompass a breakdown voltage of 10 kV

a Baliga’s figure of merit of 874.6 MW/cm

2

and a current density of 60 kA/cm

2

. Microwave plasma chemical vapor deposition (MPCVD) serves as the primary technique for industrial-scale synthesis of high-purity single-crystal diamond (SCD)

enabling rapid deposition rates while outperforming polycrystalline diamond (PCD)

high-pressure high-temperature (HPHT)

and natural diamonds in electronic properties. The techniques of MPCVD homoepitaxy on diamond substrates and heteroepitaxy on foreign substrates are comprehensively examined. Homoepitaxy

capitalizing on the intrinsic properties of diamond

shows great promise for high-frequency applications

while heteroepitaxy holds potential for large-scale manufacturing. Through a balance of technical trade-offs

these methods

can be harnessed to propel the development of diamond device fabrication roadmaps. This development will play a pivotal role in next-generation power electronics and quantum technologies. With the progress of MPCVD

research on diamond films has broadened applications by precisely controlling microstructures

morphologies

and surface properties. This overview concludes with an introduction to the most recent advancements

emerging applications

and persistent challenges in CVD diamond technology.